MARKING M1B Search Results
MARKING M1B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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D4D-1187N omron
Abstract: GS-ET-15 6132N D4D 1162N Denki D4D-2162N zb omron D4D-1A87N D4D-2120N 5522n
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EN50047 EN1088 EN60947-5-1 J9950233 UL508 E76675 D4D-1187N omron GS-ET-15 6132N D4D 1162N Denki D4D-2162N zb omron D4D-1A87N D4D-2120N 5522n | |
A09 N03 MOSFET
Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
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AD1580-A AD1580-B AD1582-A AD1582-B AD1582-C AD1583-A AD1583-B AD1583-C AD1584-A AD1584-B A09 N03 MOSFET marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23 | |
Contextual Info: SIEMENS BCR 583 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i=10kii,R 2=10kii Type Marking Ordering Code Pin Configuration BCR 583 XMs Q62702-C2385 1=B Package 2=E 3=C SOT-23 |
OCR Scan |
10kii 10kii) Q62702-C2385 OT-23 | |
xw2z-200T
Abstract: OMRON XW2Z-200T
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V530-R160E, V530-R160E xw2z-200T OMRON XW2Z-200T | |
F150-S1A
Abstract: omron F150-s1a XW2Z-200S-V XW2Z-200T F160-VP rca camera ccd F160-N64S
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V530-R160E, V530-R160E V530-R160EP. F150-S1A omron F150-s1a XW2Z-200S-V XW2Z-200T F160-VP rca camera ccd F160-N64S | |
Contextual Info: - PRELIMINARYD ecem ber 1995 Edition 2.1 FUJITSU _ P R O D U C T P R O F IL E S H E E T : MB81G83222-010/-012/-015 CMOS 2 X 128K X 3 2 SYNCHRONOUS GRAM CMOS 2 BANKS OF 131,072-WORDS x 32-BIT SYNCHRONOUS GRAPHIC RANDOM ACCESS MEMORY Marking side The Fujitsu MB81G83222 is a CMOS Synchronous Graphic Random Access Memory |
OCR Scan |
MB81G83222-010/-012/-015 072-WORDS 32-BIT MB81G83222 32-bit 374175b MB81G83222-010 MB81G83222-012 | |
P-SOT89-4-1
Abstract: max 32321 ic MARKING J LA tic 41 P-SOT-323 GPS05557 marking 253
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OCR Scan |
P-DIP-20-1 15max 025max P-DSO-14-1 P-DSO-16-1 P-SOT-89-4-1 P-SOT-343 P-SOT-323-2-1 CS005561 gso05561 P-SOT89-4-1 max 32321 ic MARKING J LA tic 41 P-SOT-323 GPS05557 marking 253 | |
JD38999
Abstract: TV07WCI TV07*W Socapex TV06RW TVS07FCI EN3645-F 900-197 EN3645-002 TVP00WCI amphenol 900047
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MIL-DTL-38999 EN3645 38999-solutions E113H DOC-000035-ANG-H JD38999 TV07WCI TV07*W Socapex TV06RW TVS07FCI EN3645-F 900-197 EN3645-002 TVP00WCI amphenol 900047 | |
bq 8050
Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
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OD-123 OD-123 OD-323 OD-323 OD-523 OD-523 OT-23 OT-23 OT-323 OT-323 bq 8050 HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ | |
Contextual Info: Transistors SMD Type NPN General Purpose Amplifier MMBT2222 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Complementary PNP type available MMBT2907 1 0.55 ● Epitaxial planar die construction. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 2 +0.1 0.95-0.1 |
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MMBT2222 OT-23 MMBT2907) 500mA 150mA 150mA | |
Contextual Info: Product specification MMBT2222 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Complementary PNP type available MMBT2907 1 0.55 ● Epitaxial planar die construction. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 |
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MMBT2222 OT-23 MMBT2907) 150mA 150mA | |
component data
Abstract: smema smema specifications automatic room light control with program QFP lead pitch 0.3mm Ricoh 2205 ups 3KVA boards
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9/98/10M component data smema smema specifications automatic room light control with program QFP lead pitch 0.3mm Ricoh 2205 ups 3KVA boards | |
pin diagram for 3296 Variable Resistor
Abstract: 3296 Variable Resistor Mullard metal glaze resistors PPO NORYL vo 301 Preset Variable resistance 3 pin 3296 Variable Resistor 3296 Variable Resistor horizontal mounting type lexan .500 lexan 920 SP 31101
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COD37 858004/300/02/pp16 pin diagram for 3296 Variable Resistor 3296 Variable Resistor Mullard metal glaze resistors PPO NORYL vo 301 Preset Variable resistance 3 pin 3296 Variable Resistor 3296 Variable Resistor horizontal mounting type lexan .500 lexan 920 SP 31101 | |
MBT2222 equivalent
Abstract: MARKING M1B
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FM120-M+ MMBT2222 FM1200-M+ OD-123+ OD-123H FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH MBT2222 equivalent MARKING M1B | |
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Contextual Info: MA111 Schottky Barrier Diodes SBD MA4S713 Silicon epitaxial planer type For switching For wave detection circuit Unit : mm 2.1±0.1 1.25±0.1 ● Small S-Mini 4-pin package ● Independent two-element incorporated, enabling high density mount- 2.0±0.1 1.3±0.1 |
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MA111 MA4S713 | |
M1B marking
Abstract: ma4s159
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2SK1259 MA4S159 100mA M1B marking ma4s159 | |
M1B markingContextual Info: 2SK1214 Switching Diodes MA159A Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 1.45 • Features 0.5R Unit 0.1 to 0.3 VR 80 V Repetitive peak reverse voltage VRRM 80 V |
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2SK1214 MA159A M1B marking | |
Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
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OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 | |
Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
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huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 | |
TRANSISTOR AH-16
Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
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DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601 | |
Formosa MS
Abstract: TRANSISTOR C 2026
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FMBT2222 FMBT2222A 120sec 260sec 30sec DS-231107 Formosa MS TRANSISTOR C 2026 | |
CBF493S
Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
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DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ | |
marking 513 SOD-323
Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
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DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256 | |
FMBT2222A
Abstract: fmbt2222 125OC 1N914
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FMBT2222 FMBT2222A MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC FMBT2222A 1N914 |