MARKING MA SOT143 Search Results

marking 93A

Contextual Info: SIEMENS BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type

Contextual Info: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611

marking 93A

Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ Q62702-F1144
Contextual Info: BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-rioise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 81 FAs

80846

Abstract: 022241 gummel
Contextual Info: BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 81 SOT-143

marking 93A

Abstract: TRANSISTOR BI 187
Contextual Info: BFP 93A NPN Silicon RF Transistor 3
For low distortion broadband amplifier and oscillators up to 2GHz at collector currents from 4 5 mA to 30 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 93A

Contextual Info: BFP181R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R

BFP181R

Contextual Info: BFP181R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R

BFP181R

Contextual Info: BFP181R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R

1s211

Abstract: 2I k
Contextual Info: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Q62702-F1594

Abstract: transistor marking RHs
Contextual Info: BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: BFP 181R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 181R

GMA marking

Abstract: IC 2272
Contextual Info: BFP 182R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 182R

SPICE 2G6

Contextual Info: BFP183R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs

transistor marking RHs

Abstract: G1816
Contextual Info: BFP 183R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 183R

Contextual Info: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

BFP182R

Abstract: TRANSISTOR BI 187
Contextual Info: BFP182R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs

BFP183R

Abstract: transistor marking RHs
Contextual Info: BFP183R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP183R RHs

Contextual Info: BFP182R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs

Contextual Info: BFP182R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP182R RGs

Contextual Info: BFP182 NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 4
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BF96I

Abstract: T0-50 s525 BF964S BF96
Contextual Info: Tem ic S e m i c o n d u c t o r s TOSO 3 # TOSO (4) # SOT23 SOT143 SOT343 RF Transistors Part Number Marking Electrica) Characteristics V DS fomax V mA mW °C Y ft at Id s Gps and F mS dB mA at f Cjsçgi and CDst at f dB MHz pF pF MH? Id s s a* V u s mA

sot143 Marking code RHs

Contextual Info: BFP183 NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

bfp183

Abstract: VPS05178
Contextual Info: BFP183 NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 4
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking