MARKING MACOM Search Results

AN-730

Abstract: C1995 DP83265
Contextual Info: National Semiconductor Application Note 730 Robert Macomber Mark Travaglio November 1990 Table of Contents corresponding bits in the CMP register will be actually stored in STAR With the BSI device in ‘‘Stop Mode’’ and no intervening accesses to the BSI device Control Bus it is

C3 1.2AGHZ

Contextual Info: TAT8804D1H 21 dB CATV 12V Power Doubler Applications HFC Nodes CATV Line Amplifiers Head End Equipment 50 to 1000 MHz 75 Ohm Amplifier 40 Pin 5x7 mm QFN Package 26 24 23 22 21 GND 33 20 GND VDD 34 19 VDD VDD 35 GND 36 GND BIAS BIAS 18 VDD 17 GND 37 16 GND

Contextual Info: TAT8804D1H 21 dB CATV 12V Power Doubler Applications HFC Nodes CATV Line Amplifiers Head End Equipment 50 to 1000 MHz 75 ohm amplifier 40 Pin 5x7 mm QFN Package General Description GND N/C GND N/C GND GND Pin Configuration The TAT8804 is an ultra-linear, QFN GaAs amplifier

Contextual Info: TAT8804D1H 21 dB CATV 12V Power Doubler Applications HFC Nodes CATV Line Amplifiers Head End Equipment 50 to 1000 MHz 75 Ohm Amplifier 40 Pin 5x7 mm QFN Package General Description GND N/C GND N/C GND GND ILIN GND GND • 50 to 1000 MHz Bandwidth  Excellent High Output Linearity at Reduced Supply

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Abstract: MAcom device marking diode marking v6 V6 marking varactor diode
Contextual Info: MAVR-000200 Series Low-Voltage / High Q Si Hyperabrupt Varactors Rev. V6 Features • Surface Mount Packages SOT-23, SC70 3LD, SOD-323, SC-79 • High Q at Low Voltages • High Capacitance Ratio at Low Voltages • SPC Process for Superior C-V Repeatability

10ACPR

Contextual Info: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

SOIC-08

Abstract: macom marking ETC1-1-13 CGA6618 CGA-6618 CGA-6618Z macom rf amp ESOP-8 ESOP-8 Land pattern marking code macom
Contextual Info: CGA-6618 Product Description CGA-6618Z Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases

psp 1004

Abstract: smt LDR AN-964 C1995 DP83256 DP83266 ODU cross connection HL6 marking
Contextual Info: National Semiconductor Application Note 964 Robert Macomber August 1994 1 0 INTRODUCTION This document describes features and mechanisms of the System Interface portion of National’s DP83200 FDDI chipset that are important for software designers to know about

capacitor 2200 micro M

Abstract: chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LR1 MRF21010LSR1 macom marking
Contextual Info: Document Number: MRF21010 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFETs 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

MRF21010

Abstract: MRF21010LR1 MRF21010LSR1 Vishay Capacitor marking
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21010 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110

marking code macom

Abstract: Macom marking code macom marking MARKING CODE CGA CGA6618 CGA-6618 CGA-6618Z ETC1-1-13 SOIC-08 marking code 2- sirenza
Contextual Info: CGA-6618 Product Description CGA-6618Z Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases

C-XM-99-001-01

Abstract: pep cxm MRF21010
Contextual Info: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

MRF21010

Contextual Info: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

LDB20C

Abstract: balun LDB20C LDB20C.201a CAP 0402 BCC-16 HPMX-7123 HPMX-7123-BLK HPMX-7123-TR1 res 0402 macom marking
Contextual Info: Agilent HPMX-7123 Single-Band Downconverter Optimized for 1900 MHz PCS Applications Data Sheet Features • Wide band operation RF input: 0.4 – 2.4 GHz IF output: 50 – 400 MHz • High conversion gain 14 dB • 2.7 – 5.0 V operation General Description

macom marking

Abstract: LDB20C LDB20C.201a MAcom device marking BCC-16 HPMX-7113 HPMX-7113-BLK HPMX-7113-TR1 CAP 0402 IND0402
Contextual Info: Agilent HPMX-7113 Single-Band Downconverter Optimized for W-CDMA and Wireless Data Terminal Applications Data Sheet Features • Wide band operation RF input: 0.4 – 2.4 GHz IF output: 50 – 400 MHz • High conversion gain 12 dB • 2.7 – 3.6 V operation

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Drawing updated to reflect current requirements. – gt 03-02-10 R. MONNIN B Modify drawing to current requirements. - rrp 10-04-27 C. SAFFLE 12-04-25 C. SAFFLE Add device type 02 and case outline X. Make changes to TJ, θJC, and θJA

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Drawing updated to reflect current requirements. – gt 03-02-10 R. MONNIN B Modify drawing to current requirements. - rrp 10-04-27 C. SAFFLE 12-04-25 C. SAFFLE 13-04-26 C. SAFFLE Add device type 02 and case outline X. Make changes to TJ, θJC, and θJA

Contextual Info: Preliminary CGA-3318 Product Description Sirenza Microdevice’s CGA-3318 is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance.

MACOM DATE CODE MARKING

Contextual Info: Preliminary Preliminary CGA-6618 Product Description Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction

marking code sirenza

Abstract: MARKING CODE CGA
Contextual Info: Preliminary CGA-3318 Product Description Sirenza Microdevice’s CGA-3318 is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance.

macom marking

Contextual Info: Preliminary CGA-6618 Product Description Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration

Contextual Info: Preliminary CGA-6618 Product Description Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration

M1502

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC1502 In teg rated GPS D ow nconverter This integrated circuit is intended for GPS receiver applications. The dual conversion design is implemented in Motorola’s low-cost high performance MOSAIC 3 silicon bipolar process and is packaged in a low-cost surface mount

toko VARIABLE CAPACITORS

Abstract: diode p036 macom marking
Contextual Info: i MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC1502 In teg rated GPS D ow nconverter This integrated circuit is intended for GPS receiver applications. The dual conversion design is implemented in Motorola’s low-cost high performance MOSAIC 3 silicon bipolar process and is packaged in a low-cost surface mount