MARKING N SOT723 Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G 3 FEATURE ƽ Pb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Device 2 SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate

LBSS123LT1G

Abstract: LBSS123LT3G
Contextual Info: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate

FK3303010L

Contextual Info: FK3303010L FK3303010L Silicon N-channel MOSFET Unit: mm For switching FK350301 in SSSMini3 type package • Features  Low drive voltage: 2.5 V drive  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL:Level 1 compliant  Marking Symbol: X1  Packaging

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

LMUN5211T1G

Abstract: marking 8C TRANSISTOR SOD MARKING CODE NG LMUN5212T1G LMUN5213T1G LMUN5214T1G 8k sot 23 marking
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5211T1G SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor

L2N7002EM3T5G

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002EM3T5G S-L2N7002EM3T5G N–Channel SOT–723 3 • Pb−Free Package is Available. • ESD Protected:2000V • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Contextual Info: mESD3.3DT5G SERIES ESD Protection Diodes In Ultra Small SOT-723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board

IEC61000-4-4

Contextual Info: mESD3.3DT5G SERIES ESD Protection Diodes In Ultra Small SOT-723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board

zener 5A6

Abstract: 5a6 dual zener diode marking code 5a6 Sot 23-5
Contextual Info: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZ6V8ALT1G Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

zener 5A6

Abstract: 5a6 dual zener diode marking code 5A6 sot 26 marking 33a zener sot23 Dual Zeners in Common Anode marking b marking 33a zener marking code AC sot 23-5 marking 27A sot-23
Contextual Info: LESHAN RADIO COMPANY, LTD. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors LMBZ6V8ALT1G Series 3 SOT–23 Dual Common Anode Zeners for ESD Protection 1 2 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1

723 SOT-723

Abstract: DATASHEET OF IC 723 pdf working OF IC 723 working OF IC 723 transistor package SOT-723 marking xd diode
Contextual Info: ESD7C3.3DT5G SERIES Transient Voltage Suppressors Micro-Packaged Diodes for ESD Protection The ESD7C3.3DT5G Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time make these parts ideal for ESD protection on designs

L2N7002M3T5G

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002M3T5G S-L2N7002M3T5G N–Channel SOT–723 3 • Pb−Free Package is Available. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Schottky LBAT54CWT1G Barrier Diodes 3 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

MARKING B8 SOT

Abstract: LBAT54SWT1G LBAT54SWT3G
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.

LBAT54DW1T1G

Abstract: LBAT54DW SV3 06
Contextual Info: LESHAN RADIO COMPANY, LTD. SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY LBAT54DW1T1G 6 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and

LBAT54CWT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Schottky LBAT54CWT1G Barrier Diodes 3 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Series Schottky LBAT54CWT1G Barrier Diodes 3 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount

Contextual Info: WILLAS SOT-723 Plastic-Encapsulate Diodes FM120-M+ DAN222M THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.

DTC114EM

Abstract: DTC114TM DTC114YM DTC123EM DTC124EM DTC124XM DTC143EM DTC143TM DTC143ZM DTC144EM
Contextual Info: DTC114EM Series Bias Resistor Transistor NPN Silicon P b Lead Pb -Free 3 COLLECTOR 3 1 2 R1 1 BASE R2 SOT-723 2 EMITTER Maximum Ratings (TA=25°C unless otherwise noted) Rating Symbol VCBO Value 50 Unit V VCEO 50 IC 100 V mA Symbol Max Unit PD 260 2.0 mW mW/°C

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002SLT1G N–Channel SOT–23 3 • We declare that the material of product compliance with RoHS requirements. 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60

Contextual Info: DTA114EM/EE/EUA/ECA/ESA Taiwan Semiconductor Small Signal Product PNP Digital Transistor FEATURES - Built-in bias resistors enable the configuration of SOT523 /SOT323/SOT23 an inverter circuit without connecting external input resistor see equivalent circuit .

LMBTH10WT1

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR Featrues LMBTH10WT1G 1 BASE 3 z We declare that the material of product 2 EMITTER compliance with RoHS requirements. 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25