SOT89 MARKING n43
Abstract: n33 SOT-23 n58 sot89 77 ic marking code marking n55 Marking code n15 SOT89 marking N42 N45 SOT-89
Text: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS DESCRIPTION The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output
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82NXX
82NXX
100ppm/
QW-R502-057
SOT89 MARKING n43
n33 SOT-23
n58 sot89
77 ic marking code
marking n55
Marking code n15 SOT89
marking N42
N45 SOT-89
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N58 SOT-89
Abstract: 82N60
Text: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS DESCRIPTION 2 The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output
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82NXX
OT-23
OT-23-3
O-236)
OT-25
100ppm/ï
OT-89
SC-59)
82NXX
QW-R502-057
N58 SOT-89
82N60
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SOT-23 MARKING N55
Abstract: SOT89 MARKING n35 SOT89 MARKING N40 SOT89 MARKING n43 N54 SOT-23 N58 SOT-89 MARKING N52 SOT 6 Marking code n15 SOT89 device marking N52 MARKING N46
Text: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS 4 3 DESCRIPTION 2 The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output
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82NXX
82NXX
OT-23
OT-25
100ppm/
OT-89
QW-R502-057
SOT-23 MARKING N55
SOT89 MARKING n35
SOT89 MARKING N40
SOT89 MARKING n43
N54 SOT-23
N58 SOT-89
MARKING N52 SOT 6
Marking code n15 SOT89
device marking N52
MARKING N46
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marking n58
Abstract: sot-23 Marking N52 marking N52 82N50 n10 marking code sot 23 82n55 SOT89 MARKING n35 82N60 82N25 N58 SOT-89
Text: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS DESCRIPTION The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output
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82NXX
82NXX
100ppm/
82NxxL-AB3-E-R
82NxxG-AB3-E-R
OT-89
82NxxL-AE3-5-R
82NxxG-AE3-5-R
OT-23
82NxxL-AF5-B-R
marking n58
sot-23 Marking N52
marking N52
82N50
n10 marking code sot 23
82n55
SOT89 MARKING n35
82N60
82N25
N58 SOT-89
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marking n58
Abstract: No abstract text available
Text: Transistors SMD Type Product specification FCX458 Features 400 Volt VCEO Ptot= 1 Watt Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current
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FCX458
100mA,
20MHz
-10mA
marking n58
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marking n58
Abstract: smd transistor marking br FCX458 A 320v MARKING SMD NPN TRANSISTOR BR transistor marking smd transistor smd marking MARKING SMD npn TRANSISTOR
Text: Transistors SMD Type NPN Silicon Planar High Voltage Transistor FCX458 Features 400 Volt VCEO Ptot= 1 Watt Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage
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FCX458
100mA,
20MHz
-10mA
marking n58
smd transistor marking br
FCX458
A 320v
MARKING SMD NPN TRANSISTOR BR
transistor marking smd
transistor smd marking
MARKING SMD npn TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 82NXX CMOS IC V OLT AGE DET ECT ORS 4 3 5 ̈ DESCRI PT I ON 2 The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output
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82NXX
82NXX
OT-25
OT-23
100ppm/Â
OT-89
QW-R502-057
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D1391
Abstract: G5684 k1060 d5030 power transistor k1821 K0220 d5101 k1120 transistor m1104 K1060 data sheet
Text: Contents List of Ordering Codes Page 5 8 Overview of Available Types Electrical Characteristics in Brief 11 26 Standard Chip Capacitors Slim-Line Chip Capacitors 27 55 Leaded Capacitors, EIA Standard Leaded Capacitors, CECC Standard 59 68 General Technical Information
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Untitled
Abstract: No abstract text available
Text: ZT5050 Series TCXO 10.0 MHz — 60.0 MHz GREENRAY INDUSTRIES, INC. PRECISION QUARTZ TECHNOLOGY Very High Stability Euro Package HCMOS or Sine Wave Output 3.3V or 5V Supply Ideal for Communications and Test Equipment Combination of Analog and Digital design for applications which
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ZT5050
ZT5050
ZT5051
ZT5052
ZT5053
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marking n58
Abstract: T78 5V T-78
Text: ZT5050 Series TCXO 10.0 MHz – 60.0 MHz GREENRAY INDUSTRIES, INC. PRECISION QUARTZ TECHNOLOGY Very High Stability Euro Package HCMOS or Sine Wave Output 3.3V or 5V Supply Ideal for Communications and Test Equipment Combination of Analog and Digital design for applications which
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ZT5050
ZT5010
ZT5011
ZT5012
ZT5013
marking n58
T78 5V
T-78
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Zener diode smd marking S4
Abstract: DIAC DB2 melf ZENER diode COLOR BAND gps 1575R melf ZENER diode COLOR CODE LTWC455E zener smd marking 931 1575R SR360* EQUIVALENT Tuning Fork Crystal 40khz
Text: . COMPANY PROFILE Shenzhen Luguang Electronic Technology CO.,LTD.is a high-tech enterprise,which is specializing in R&D,manufacturing,and selling of various piezoelectric materials,piezoelectric frequency components, diodes,transistors,modules,digital television receivers,wireless controllers,etc.
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R1407,
R1401,
Zener diode smd marking S4
DIAC DB2
melf ZENER diode COLOR BAND
gps 1575R
melf ZENER diode COLOR CODE
LTWC455E
zener smd marking 931
1575R
SR360* EQUIVALENT
Tuning Fork Crystal 40khz
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N5392
Abstract: B37979 N5181 g5561 siemens leaded ceramic capacitors n5822 G5332 n1330j G1821 N1222
Text: Leaded Capacitors, EIA Standard C0G Features ● ● ● ● Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications ● ● ● ● Resonant circuits Filter circuits Timing elements Coupling and filtering, particularly in RF circuits
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B37979-N
B37986-N
category-G1271-J51
-N1331-J51
-G1331-J51
-N1391-J51
-G1391-J51
-N1471-J51
-G1471-J51
-N1561-J51
N5392
B37979
N5181
g5561
siemens leaded ceramic capacitors
n5822
G5332
n1330j
G1821
N1222
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n1222
Abstract: n5181 G1821 G5562 N522 G1120 G1331 Siemens ceramic Capacitors C0G g5561 siemens matsushita ceramic filter
Text: Multilayer Leaded Capacitors, EIA Standard C0G/NP0/CH Features ● ● ● ● Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications ● ● ● ● Resonant circuits Filter circuits Timing elements Coupling and filtering,
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B37979-N
B37986-N
-N1681-K54
-N1821-K54
-N1102-K54
-G1100-K54
-G1120-K54
-G1150-K54
-G1180-K54
-G1220-K54
n1222
n5181
G1821
G5562
N522
G1120
G1331
Siemens ceramic Capacitors C0G
g5561
siemens matsushita ceramic filter
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G547
Abstract: G1331 n556 G1182 cr 104 G1120 G1151 G1821 N133 n139
Text: Multilayer Leaded Capacitors, EIA Standard C0G/NP0 Features b Good thermal stability High insulation resistance Low dissipation factor Low inductance * 30+5 *) Applications • ■ ■ ■ s h ■ ■ ■ ■ Resonant circuits Filter circuits Timing elements
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KKE0456-R
B37979N
B37986N
G547
G1331
n556
G1182
cr 104
G1120
G1151
G1821
N133
n139
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N5817
Abstract: SL5018 SL5019 U455D CTS100MHz c4560 7Mc 8128z
Text: SL5019/P Semiconductor LOW POWER NARROW BAND FM IF Description The SL5019/P performs single conversion FM reception and consist of oscillator, mixer, limiting IF amplifier, and meter drive circuitry. These devices are designed for use in FM dual conversion communication equipment.
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SL5019/P
SL5019/P
SL5018
SL5018.
KSI-W005-001
N5817
SL5019
U455D
CTS100MHz
c4560
7Mc 8128z
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n5822
Abstract: 1N5820-1N5822 1N5820 1N5821 1N5822
Text: 1N5820 - 1 N5822 3.0A SCHOTTKY BARRIER RECTIFIERS Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward
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1N5820
-1N5822
MIL-STD-202,
D0-201
DS23003
1N5820-1N5822
n5822
1N5821
1N5822
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1N5822
Abstract: No abstract text available
Text: Philips Semiconductors APX fc,b53T31 00EbT34 Tflb Controlled avalanche Schottky Product specification N5820ID/21ID/22ID barrier diodes N AMER PHILIPS/DISCRETE DESCRIPTION Schottky barrier diodes in hermetically sealed SOD84A Implosion Diode ID envelope,
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b53T31
00EbT34
N5820ID/21ID/22ID
OD84A
1N5820
1N5821
1N5822
1N5822
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K1181
Abstract: B37986d
Text: Leaded Capacitors, EIA Standard COG • • • • Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications • • • • 00, 50+ 0,05 Resonant circuits Filter circuits Timing elements Coupling and filtering,
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B379791
B37986-K1122-J51
-K1152-J51
-K1182-J51
-K1222-J51
B37979-
B37986-D1122-J51
-D1152-J51
-D1182-J51
-D1222-J51
K1181
B37986d
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n5822
Abstract: No abstract text available
Text: 1N5820 - 1N5822 VISHAY 3.0A SCHOTTKY BARRIER RECTIFIERS /uTE M ir I POWERSEMICONDUCTOR J Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Etticiency High Surge Capability
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OCR Scan
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1N5820
1N5822
D0-201
MIL-STD-202,
DS23003
1N5820-1N5822
n5822
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N5818
Abstract: n5819
Text: 1N5817 - 1N5819 VISHAY 1.0A SCHOTTKY BARRIER RECTIFIER / u T E M ir I POWERSEMICONDUCTOR J Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward
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OCR Scan
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1N5817
1N5819
DO-41
MIL-STD-202,
DS23001
1N5817-1N5819
N5818
n5819
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Untitled
Abstract: No abstract text available
Text: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS 3A I f a v V rrm 40 V Tj 150°C Vf (max) 0.475 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREMELY FAST SWITCHING ■ LOW FORWARD VOLTAGE DROP
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1N582x
D0-201
1N5820
1N5821
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N5818
Abstract: No abstract text available
Text: 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS If av 1A V rrm 40 V Tj 150°C V f (max) 0.45 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREMELY FAST SWITCHING ■ LOW FORWARD VOLTAGE DROP
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1N581x
N5818
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N5821
Abstract: 1N5821 diode do-201
Text: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS I f a v 3A V rrm 40 V Vf 150°C Tj (max) 0.475 V FEATURES AND BENEFITS • ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP
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1N582x
D0-201
N5821
1N5821
diode do-201
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 1N5820 1N5821 1N5822 A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,
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1N5820/D
1N5820
1N5821
1N5822
1N5820
1N5822
1N5821
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