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    MARKING N58 Search Results

    MARKING N58 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING N58 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT89 MARKING n43

    Abstract: n33 SOT-23 n58 sot89 77 ic marking code marking n55 Marking code n15 SOT89 marking N42 N45 SOT-89
    Text: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS „ DESCRIPTION The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output


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    PDF 82NXX 82NXX 100ppm/ QW-R502-057 SOT89 MARKING n43 n33 SOT-23 n58 sot89 77 ic marking code marking n55 Marking code n15 SOT89 marking N42 N45 SOT-89

    N58 SOT-89

    Abstract: 82N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS  DESCRIPTION 2 The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output


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    PDF 82NXX OT-23 OT-23-3 O-236) OT-25 100ppm/ï OT-89 SC-59) 82NXX QW-R502-057 N58 SOT-89 82N60

    SOT-23 MARKING N55

    Abstract: SOT89 MARKING n35 SOT89 MARKING N40 SOT89 MARKING n43 N54 SOT-23 N58 SOT-89 MARKING N52 SOT 6 Marking code n15 SOT89 device marking N52 MARKING N46
    Text: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS 4 3 „ DESCRIPTION 2 The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output


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    PDF 82NXX 82NXX OT-23 OT-25 100ppm/ OT-89 QW-R502-057 SOT-23 MARKING N55 SOT89 MARKING n35 SOT89 MARKING N40 SOT89 MARKING n43 N54 SOT-23 N58 SOT-89 MARKING N52 SOT 6 Marking code n15 SOT89 device marking N52 MARKING N46

    marking n58

    Abstract: sot-23 Marking N52 marking N52 82N50 n10 marking code sot 23 82n55 SOT89 MARKING n35 82N60 82N25 N58 SOT-89
    Text: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS „ DESCRIPTION The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output


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    PDF 82NXX 82NXX 100ppm/ 82NxxL-AB3-E-R 82NxxG-AB3-E-R OT-89 82NxxL-AE3-5-R 82NxxG-AE3-5-R OT-23 82NxxL-AF5-B-R marking n58 sot-23 Marking N52 marking N52 82N50 n10 marking code sot 23 82n55 SOT89 MARKING n35 82N60 82N25 N58 SOT-89

    marking n58

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification FCX458 Features 400 Volt VCEO Ptot= 1 Watt Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current


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    PDF FCX458 100mA, 20MHz -10mA marking n58

    marking n58

    Abstract: smd transistor marking br FCX458 A 320v MARKING SMD NPN TRANSISTOR BR transistor marking smd transistor smd marking MARKING SMD npn TRANSISTOR
    Text: Transistors SMD Type NPN Silicon Planar High Voltage Transistor FCX458 Features 400 Volt VCEO Ptot= 1 Watt Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage


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    PDF FCX458 100mA, 20MHz -10mA marking n58 smd transistor marking br FCX458 A 320v MARKING SMD NPN TRANSISTOR BR transistor marking smd transistor smd marking MARKING SMD npn TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 82NXX CMOS IC V OLT AGE DET ECT ORS 4 3 5 ̈ DESCRI PT I ON 2 The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output


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    PDF 82NXX 82NXX OT-25 OT-23 100ppm/Â OT-89 QW-R502-057

    D1391

    Abstract: G5684 k1060 d5030 power transistor k1821 K0220 d5101 k1120 transistor m1104 K1060 data sheet
    Text: Contents List of Ordering Codes Page 5 8 Overview of Available Types Electrical Characteristics in Brief 11 26 Standard Chip Capacitors Slim-Line Chip Capacitors 27 55 Leaded Capacitors, EIA Standard Leaded Capacitors, CECC Standard 59 68 General Technical Information


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    Untitled

    Abstract: No abstract text available
    Text: ZT5050 Series TCXO 10.0 MHz — 60.0 MHz GREENRAY INDUSTRIES, INC. PRECISION QUARTZ TECHNOLOGY Very High Stability Euro Package HCMOS or Sine Wave Output 3.3V or 5V Supply Ideal for Communications and Test Equipment Combination of Analog and Digital design for applications which


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    PDF ZT5050 ZT5050 ZT5051 ZT5052 ZT5053

    marking n58

    Abstract: T78 5V T-78
    Text: ZT5050 Series TCXO 10.0 MHz – 60.0 MHz GREENRAY INDUSTRIES, INC. PRECISION QUARTZ TECHNOLOGY Very High Stability Euro Package HCMOS or Sine Wave Output 3.3V or 5V Supply Ideal for Communications and Test Equipment Combination of Analog and Digital design for applications which


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    PDF ZT5050 ZT5010 ZT5011 ZT5012 ZT5013 marking n58 T78 5V T-78

    Zener diode smd marking S4

    Abstract: DIAC DB2 melf ZENER diode COLOR BAND gps 1575R melf ZENER diode COLOR CODE LTWC455E zener smd marking 931 1575R SR360* EQUIVALENT Tuning Fork Crystal 40khz
    Text: . COMPANY PROFILE Shenzhen Luguang Electronic Technology CO.,LTD.is a high-tech enterprise,which is specializing in R&D,manufacturing,and selling of various piezoelectric materials,piezoelectric frequency components, diodes,transistors,modules,digital television receivers,wireless controllers,etc.


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    PDF R1407, R1401, Zener diode smd marking S4 DIAC DB2 melf ZENER diode COLOR BAND gps 1575R melf ZENER diode COLOR CODE LTWC455E zener smd marking 931 1575R SR360* EQUIVALENT Tuning Fork Crystal 40khz

    N5392

    Abstract: B37979 N5181 g5561 siemens leaded ceramic capacitors n5822 G5332 n1330j G1821 N1222
    Text: Leaded Capacitors, EIA Standard C0G Features ● ● ● ● Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications ● ● ● ● Resonant circuits Filter circuits Timing elements Coupling and filtering, particularly in RF circuits


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    PDF B37979-N B37986-N category-G1271-J51 -N1331-J51 -G1331-J51 -N1391-J51 -G1391-J51 -N1471-J51 -G1471-J51 -N1561-J51 N5392 B37979 N5181 g5561 siemens leaded ceramic capacitors n5822 G5332 n1330j G1821 N1222

    n1222

    Abstract: n5181 G1821 G5562 N522 G1120 G1331 Siemens ceramic Capacitors C0G g5561 siemens matsushita ceramic filter
    Text: Multilayer Leaded Capacitors, EIA Standard C0G/NP0/CH Features ● ● ● ● Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications ● ● ● ● Resonant circuits Filter circuits Timing elements Coupling and filtering,


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    PDF B37979-N B37986-N -N1681-K54 -N1821-K54 -N1102-K54 -G1100-K54 -G1120-K54 -G1150-K54 -G1180-K54 -G1220-K54 n1222 n5181 G1821 G5562 N522 G1120 G1331 Siemens ceramic Capacitors C0G g5561 siemens matsushita ceramic filter

    G547

    Abstract: G1331 n556 G1182 cr 104 G1120 G1151 G1821 N133 n139
    Text: Multilayer Leaded Capacitors, EIA Standard C0G/NP0 Features b Good thermal stability High insulation resistance Low dissipation factor Low inductance * 30+5 *) Applications • ■ ■ ■ s h ■ ■ ■ ■ Resonant circuits Filter circuits Timing elements


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    PDF KKE0456-R B37979N B37986N G547 G1331 n556 G1182 cr 104 G1120 G1151 G1821 N133 n139

    N5817

    Abstract: SL5018 SL5019 U455D CTS100MHz c4560 7Mc 8128z
    Text: SL5019/P Semiconductor LOW POWER NARROW BAND FM IF Description The SL5019/P performs single conversion FM reception and consist of oscillator, mixer, limiting IF amplifier, and meter drive circuitry. These devices are designed for use in FM dual conversion communication equipment.


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    PDF SL5019/P SL5019/P SL5018 SL5018. KSI-W005-001 N5817 SL5019 U455D CTS100MHz c4560 7Mc 8128z

    n5822

    Abstract: 1N5820-1N5822 1N5820 1N5821 1N5822
    Text: 1N5820 - 1 N5822 3.0A SCHOTTKY BARRIER RECTIFIERS Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward


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    PDF 1N5820 -1N5822 MIL-STD-202, D0-201 DS23003 1N5820-1N5822 n5822 1N5821 1N5822

    1N5822

    Abstract: No abstract text available
    Text: Philips Semiconductors APX fc,b53T31 00EbT34 Tflb Controlled avalanche Schottky Product specification N5820ID/21ID/22ID barrier diodes N AMER PHILIPS/DISCRETE DESCRIPTION Schottky barrier diodes in hermetically sealed SOD84A Implosion Diode ID envelope,


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    PDF b53T31 00EbT34 N5820ID/21ID/22ID OD84A 1N5820 1N5821 1N5822 1N5822

    K1181

    Abstract: B37986d
    Text: Leaded Capacitors, EIA Standard COG • • • • Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications • • • • 00, 50+ 0,05 Resonant circuits Filter circuits Timing elements Coupling and filtering,


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    PDF B379791 B37986-K1122-J51 -K1152-J51 -K1182-J51 -K1222-J51 B37979- B37986-D1122-J51 -D1152-J51 -D1182-J51 -D1222-J51 K1181 B37986d

    n5822

    Abstract: No abstract text available
    Text: 1N5820 - 1N5822 VISHAY 3.0A SCHOTTKY BARRIER RECTIFIERS /uTE M ir I POWERSEMICONDUCTOR J Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Etticiency High Surge Capability


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    PDF 1N5820 1N5822 D0-201 MIL-STD-202, DS23003 1N5820-1N5822 n5822

    N5818

    Abstract: n5819
    Text: 1N5817 - 1N5819 VISHAY 1.0A SCHOTTKY BARRIER RECTIFIER / u T E M ir I POWERSEMICONDUCTOR J Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward


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    PDF 1N5817 1N5819 DO-41 MIL-STD-202, DS23001 1N5817-1N5819 N5818 n5819

    Untitled

    Abstract: No abstract text available
    Text: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS 3A I f a v V rrm 40 V Tj 150°C Vf (max) 0.475 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREMELY FAST SWITCHING ■ LOW FORWARD VOLTAGE DROP


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    PDF 1N582x D0-201 1N5820 1N5821

    N5818

    Abstract: No abstract text available
    Text: 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS If av 1A V rrm 40 V Tj 150°C V f (max) 0.45 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREMELY FAST SWITCHING ■ LOW FORWARD VOLTAGE DROP


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    PDF 1N581x N5818

    N5821

    Abstract: 1N5821 diode do-201
    Text: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS I f a v 3A V rrm 40 V Vf 150°C Tj (max) 0.475 V FEATURES AND BENEFITS • ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP


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    PDF 1N582x D0-201 N5821 1N5821 diode do-201

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 1N5820 1N5821 1N5822 A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,


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    PDF 1N5820/D 1N5820 1N5821 1N5822 1N5820 1N5822 1N5821