MARKING N6 AMPLIFIER Search Results

amplifier mmic marking code n6

Abstract: MMIC Amplifier Micro-X marking g NBB-310 MMIC marking code R NBB-31 HEMT marking P mmic amplifier marking code N6
Contextual Info: NBB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Package Style: Micro-X, 4-Pin, Ceramic Features  Reliable, Low-Cost HBT Design  13dB Gain    GND 4 MARKING - N6 High P1dB of +15.2dBm at 6GHz RF IN 1 50 I/O Matched for High Freq.

amplifier mmic marking code n6

Abstract: NBB-300 NBB-310 NBB-310-D NBB-310-T1 NBB-400 NLB-300 NLB-310 marking nt gain stage GaAs MMIC AMPLIFIER mmic amplifier marking code N6
Contextual Info: NBB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Ceramic Features „ Reliable, Low-Cost HBT Design „ 13dB Gain „ „ „ GND 4 MARKING - N6 High P1dB of +15.2dBm at 6GHz RF IN 1 50Ω I/O Matched for High Freq.

Contextual Info: NBB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Ceramic Features „ Reliable, Low-Cost HBT Design „ 13dB Gain „ „ „ GND 4 MARKING - N6 High P1dB of +15.2dBm at 6GHz RF IN 1 50Ω I/O Matched for High Freq.

n7 transistor

Abstract: marking n5 amplifier N6 Amplifier marking n6 transistor amplifier marking code n6 transistor N6 marking N7 2SC1654 sot-23 Marking N5 Marking N5
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC1654 Pb High DC current gain:hFE=130 Typ Lead-free (VCE=3V,IC=15mA) z High voltage. APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SC1654 TRANSISTOR NPN SOT–23 FEATURES  High Frequency Power Amplifier Application  Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

NGA-686

Abstract: N6 Amplifier marking N6 mmic amplifier marking n6 marking n6 transistor HBT marking P MMIC N6
Contextual Info: Preliminary Preliminary NGA-686 Product Description Sirenza Microdevices’ NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance

NGA-686

Contextual Info: Preliminary NGA-686 Product Description Sirenza Microdevices’ NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance

Contextual Info: Preliminary NGA-686 Product Description Sirenza Microdevices’ NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance

marking n6 amplifier

Abstract: SIRENZA MARKING
Contextual Info: Preliminary NGA-689 Product Description Sirenza Microdevices’ NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance

SIRENZA MARKING

Contextual Info: Preliminary NGA-689 Product Description Sirenza Microdevices’ NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance

NGA-689

Abstract: 4n63
Contextual Info: Preliminary Preliminary NGA-689 Product Description Sirenza Microdevices’ NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance

N6 marking code

Abstract: marking 210 N6 Amplifier amplifier marking code n6 marking n6 amplifier N6 marking diode MSD601 MSD601-RT1 MSD601-ST1
Contextual Info: LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistors Surface Mount MSD601–RT1 MSD601–ST1 COLLECTOR 3 3 2 2 BASE 1 EMITTER 1 CASE MAXIMUM RATINGS T A = 25°C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

N6 marking code

Abstract: marking n6 transistor N6 Amplifier N6 marking diode MSD601 MSD601-RT1 MSD601-ST1 amplifier marking code n6 marking n6
Contextual Info: NPN General Purpose Amplifier Transistors Surface Mount MSD601–RT1 MSD601–ST1 COLLECTOR 3 3 1 2 BASE 1 EMITTER 2 CASE MAXIMUM RATINGS T A = 25°C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current–Continuous

Contextual Info: SILICON NPN EPITAXIAL TYPE HN1C01F U nit in mm AUD IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • • • • Small Package Dual Type High Voltage and High Current : V q ]jo = 50V, I q = 150mA (Max.) High hjrE : hpg = 120—400 Excellent hpE Linearity

2SC1654

Abstract: N5 npn transistor n7 transistor 2SC1654N5 marking n5 amplifier sot-23 Marking N5 marking n6 2SC1654N7 amplifier marking code n6 marking n6 transistor
Contextual Info: 2SC1654 0.05A , 180V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE   High Frequency Power Amplifier Application Power Switching Applications A L 3 3

MMIC Amplifier Micro-X marking 420

Abstract: MMIC Amplifier Micro-X marking d 12ghz marking N6 mmic
Contextual Info: NBB-310 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers

micro-x 420

Contextual Info: NBB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM

Contextual Info: NBB-310 4 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers

Contextual Info: NBB-310 RoHS Compliant & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers

MMIC Amplifier Micro-X marking 420

Abstract: MMIC Amplifier Micro-X marking d 12ghz
Contextual Info: NBB-310 RoHS & Pb-Free Product CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers

Contextual Info: NBB-310  &$6&$'$%/ %52$'%$1' *D$V 00,& $03/, ,(5 '& 72 *+] 7\SLFDO $SSOLFDWLRQV • Narrow and Broadband Commercial and Military Radio Designs • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs (PTP/PMP/ • Linear and Saturated Amplifiers

power one pmp 3.24

Abstract: MARKING N6 RFMD MMIC N6 MARKING RFMD amplifier marking n6 MMIC Amplifier marking D MMIC Amplifier Micro-X marking D 10GHZ GAAS 10GHz mmic 100GHz BJT
Contextual Info: NLB-310 NLB-310Cascadable Broadband GaAs MMIC Amplifier DC to 10GHz CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz RoHS Compliant & Pb-Free Product Package Style: Micro-X, 4-Pin, Plastic Features „ „ „ „ „ GND 4 Reliable, Low-Cost HBT Design 12.7dB Gain, +12.6dBm

Contextual Info: NBB-310 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM