MARKING N91 Search Results

marking N91

Contextual Info: SO642 SMALL SIGNAL NPN TRANSISTOR • ■ ■ Type Marking SO642 N91 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS THE PNP COMPLEMENTARY TYPE IS SO692 APPLICATIONS VIDEO AMPLIFIER CIRCUITS RGB

Contextual Info: SO642 SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type Marking SO642 N91 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE PLASTIC SOT-23 PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS SO692 APPLICATIONS

marking N91

Abstract: PNP Epitaxial Silicon Transistor sot-23 SO642 SO692
Contextual Info: SO642 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO642 N91 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS

SO642

Abstract: SO692
Contextual Info: SO642 SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type Marking SO 642 N91 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER PNP COMPLEMENT IS SO692 2 3

Contextual Info: SO642 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO642 N91 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS

Contextual Info: SO642 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA • ■ ■ ■ Type Marking SO642 N91 SILICON EPITAXIAL PLANAR NPN HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE PNP COMPLEMENTARY TYPE IS

3BS transistor

Abstract: S0642
Contextual Info: rz 7 ^ 7# SGS-THOMSON R L ie r a « S 0 6 4 2 SMALL SIGNAL NPN TRANSISTOR Type Marking SO 642 N91 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER

diode t 4148

Abstract: TI 4148 FDLL916B 914/A/B FDLL4448 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Discrete POWER & Signal Technologies National Semiconductor" 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 COLOR BAND MARKING DEVICE F D L L 91 4 F D LL914A FD LL914B F D L L 91 6 F D LL916A FD LL916B FD LL4148 FD LL4448 1ST BAND

BF520

Abstract: bf519 S0642 BF654 S0692 BFS18 BF517 BF599 BFR92A BFS17
Contextual Info: SURFACE-M O UNTED DEVICES R A D IO F R E Q U E N C Y T R A N S IS T O R S Types ★SO 91 8 'HI ★BFS17 <R>m ★BFR92A R + BFR93A IR) B FS18 <R) ★BFS19 IR) BF654 *B FS 2 0 IR) BF599 ♦S0642 ★S0692 Pola­ rity N N N N N N N N N N P Maxim um ratings Marking

marking p32

Abstract: Marking P33 SO5400 So642 BFN22 NPN 2907 J33 IC
Contextual Info: rZ 7 SGS-THOMSON SURFACE MOUNT DEVICES Ä 7 # HDË @li[LI gra(Q (fi(lD(Si GENERAL PURPOSE & INDUSTRIAL PNP MEDIUM CURRENT SWITCHING AND LOW FREQUENCY APPLICATION TRANSISTORS Type VC BO VCEO *C ptot hFE @ lc ' v CE VCE (sat) @ 'C / Iß max BSR 15 BSR 16 SO 2906

SO4403

Abstract: F5GL marking n20 So642 SO3903
Contextual Info: S G S— THOMSON 71C D 1 7 ^ E CÎR37 0 0 0 4 ^ 1 , 3 | THOÎÏÎSOM SEMICONDUCTORS_ ' T - J r - // y . 3A f & switching transistors Characteristics at 2 5 °C Maximum Type« ratings NPN PNP p »o» VCEO (mWJ (V) 200 12 h2lE@ le min BSV 52

bcw 918

Abstract: SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115
Contextual Info: micropackaged devices microboitiers ^ général purpose and switching transistor selector guide guide de sélection-transistors de commutation et usage général THOMSON-CSF Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221

multicolor led 2-pin

Abstract: la cn5m lcg t67c-s2u2 M67S-N2Q2 Q65110A7237 lcg M67s p2q2 lw p4sg v2ab OSLUX LCB M67S LCB E6SG
Contextual Info: Light Emitting Diodes Lumineszenzdioden 13 Light Emitting Diodes . Lumineszenzdioden . 13 Safety Instructions .

diamond sx 600

Abstract: Q65110A8176 Q65110A1954 LA E6SF Q65110A8177 LRTBGFTG Q65110A9038 LW QH8G-Q2S2-3K5L-1 Q65110A2395 pointled
Contextual Info: Light Emitting Diodes 11 Light Emitting Diodes . 11 Safety Instructions . 13

RESISTOR NETWORK SMD 8 PIN array isolated 2512

Abstract: 88em8011 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606
Contextual Info: Cover 88EM8011 Power Factor Correction Controller Datasheet Patents, Patents Pending Including US Pat. Nos. 7,266,001 and 7,292,013 Doc. No. MV-S104861-00, Rev. November 28, 2007 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8011

STR G 8654

Abstract: A673 transistor transistor A673 transistor Bu 45080 TT 2188 mx 362-0 TRANSISTOR SMD MARKING CODE 3401 diode BZW 70-20 sfh 202 diode 3302 81a ir receiver
Contextual Info: Foreword Foreword Foreword Vorwort The information in this catalog is correct as of March 2011. Die Angaben in diesem Katalog entsprechen dem Stand März 2011. All products listed in this catalog are RoHS compliant, a fact that will be explicitly noted in the respective data sheet. For up-to-date

1N914

Abstract: N914A N914B 1N914B 1N914-1
Contextual Info: 1N914 / 1N914A / 1N914B FAST SWITCHING DIODE Features Fast Switching Speed High Reliability High Conductance For General Purpose Switching Applications T D Mechanical Data_ • • • • DO-35 Case: D O -35, Glass Terminals: Solderable per M IL-STD-202,

Contextual Info: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

2601NZ

Abstract: FDW2601NZ 2601N
Contextual Info: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

n mosfet pspice parameters

Abstract: FDW2512NZ 2512nz
Contextual Info: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

5e8 marking

Abstract: 66E-3
Contextual Info: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

Contextual Info: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

FDW2601NZ

Abstract: N-Channel 2.5V 2601NZ
Contextual Info: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance

2601NZ

Abstract: 47e3 Diode N7 S2 N9 S2 MARKING DIODE 096E-9 dual mosfet 337 Dual N-Channel 2.5V 17E-3
Contextual Info: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance