MARKING NPN TRANSISTOR 1K SOT223 Search Results

FZT600

Abstract: MARKING npn TRANSISTOR 1k sot223
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 FZT600 ISSUE 3 – FEBRUARY 1997 FEATURES * 2A continuous current * 140 VOLT VCEO * Guaranteed hFE Specified up to 1A TYPICAL CHARACTERISTICS C E 20k +-=10V V - Gain 0.90 + * I /I =100 8k 0.70

Contextual Info: A Product Line of Diodes Incorporated Green ZDT6753 100V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SM-8 Features Mechanical Data • • Case: SM-8 8 LEAD SOT223 • Case Material: Molded Plastic, “Green” Molding Compound. • NPN Transistor • BVCEO > 100

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 ISSUE 3 – FEBRUARY 1997 FEATURES * 2A continuous current * 140 VOLT VCEO * Guaranteed hFE Specified up to 1A C 20k E Group B 1.00 PART MARKING DETAIL – +-=10V FZT600 C V 16k 0.90 + * I /I =100

ZXTN

Abstract: ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor
Contextual Info: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZXTN2011G

Abstract: ZXTN2011GTA ZXTN2011GTC
Contextual Info: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZX5T853G

Abstract: ZX5T853GTA ZX5T853GTC
Contextual Info: ZX5T853G 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC

ZXTN

Abstract: ZXTN2010GTA ZXTN2010G ZXTN2010GTC
Contextual Info: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

ZX5T851G

Abstract: ZX5T851GTA ZX5T851GTC Bv 42 transistor
Contextual Info: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in

ZXTN2010GTA

Abstract: ZXTN2010G ZXTN2010GTC Bv 42 transistor
Contextual Info: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

Contextual Info: ZXTN2010G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits

X5T851

Abstract: bv 42 TRANSISTOR equivalent
Contextual Info: ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in

2d SMD PNP TRANSISTOR

Abstract: NB ad smd transistor 1ff TRANSISTOR SMD MARKING CODE SMD MARKING CODE FE sot89 H1 SOT-89 transistor rf smd transistor 5c sot-23 BC548 TRANSISTOR SMD TRANSISTOR Marking XB SOT-89 TRANSISTOR BC337 SMD smd dual diode marking code AH sot-23
Contextual Info: CENTRAL SEMICONDUCTOR 50E D nñnb3 CEN D D D Q S l l 3Gb SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW TYPE NO. CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 CMPT3906 CMPT4401 CMPT4403 CMPT5086 CMPT5087 CMPT5088

1ff TRANSISTOR SMD MARKING CODE

Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
Contextual Info: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD2136 NPN SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SD2136 is designed for power application.  FEATURES * High forward current transfer ratio hFE which has satisfactory linearity. * Low collector to emitter saturation voltage VCE SAT .

Contextual Info: A Product Line of Diodes Incorporated Green FZT751Q 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features

Contextual Info: A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. •

DS32023

Abstract: DXTN07100BP5 DXTN07100BP5-13 dtn7100b
Contextual Info: A Product Line of Diodes Incorporated DXTN07100BP5 ADVANCE INFORMATION 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm

DXT690B

Abstract: DXT690BP5 DXT690BP5-13
Contextual Info: A Product Line of Diodes Incorporated DXT690BP5 45V NPN HIGH GAIN TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W VCEO = 45V IC = 3A; ICM = 6A

T6790

Abstract: ZDT6790 TRANSISTOR C 3068
Contextual Info: A Product Line of Diodes Incorporated Green ZDT6790 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTOR IN SM-8 PACKAGE Features Mechanical Data • • • • • • • NPN Transistor ƒ BVCEO > 45 ƒ VCE sat < 100mV @ IC= 100mA ƒ Continuous Current IC = 2A

Contextual Info: A Product Line of Diodes Incorporated DXT690BP5 45V NPN HIGH GAIN TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W VCEO = 45V IC = 3A; ICM = 6A

fzt 655

Abstract: FZT655 FZT755 DS33151 FZT655TA
Contextual Info: A Product Line of Diodes Incorporated Green FZT655 150V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 150V IC = 1A high Continuous Current Low Saturation Voltage Complementary PNP Type – FZT755

ZXTN25020DG

Abstract: TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25
Contextual Info: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor

Contextual Info: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor

Contextual Info: A Product Line of Diodes Incorporated DXTN07100BP5 ADV AN CE I N FORM AT I ON 100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm