MARKING NSC Search Results

NATIONAL SEMICONDUCTOR MARKING CODE sot

Abstract: national marking code P9506AB national marking code 8 soic NATIONAL SEMICONDUCTOR MARKING CODE S9506AB M51AB On semiconductor date Code national marking date code M9506AB
Contextual Info: Page 1 of 4 QA/Product Engineering Europe COMPONENT COMPONENTMARKING MARKING Components are marked - on front side - full name or coded - one or more lines M9506AB LM2901N First Line of Marking Examples: Standard NS U M51AB LM2901M S9506AB SM9448AH Z XX YY TT

COP*ACC7

Abstract: CR16 44plcc FLEX-700 87L84 87L88 PM48 L9000 LABTOOL-48 ALL-07 programming adapter microsystems
Contextual Info: 9/9/98 N MICROCONTROLLER TECHNOLOGIES Volume programming solutions for COP8 OTP families 10/30/98 - Dave Katra, email: dave.katra@nsc.com Selecting the "correct" volume OTP programming solution depends on a variety of factors, such as the programming time required for each device, the device package type, any marking or labeling,

NATIONAL SEMICONDUCTOR MARKING CODE sot

Abstract: national marking code NATIONAL SEMICONDUCTOR MARKING CODE DEVICE MARKING CODE table sot-23 MARKING CODE ZA On semiconductor date Code dpak YEAR A national top marking codes national marking date code national marking code sot sot23 mark code KS
Contextual Info: Device Marking Conventions National Semiconductor marks devices sold in order to provide device identification and manufacturing traceablility information. The method of presenting the information marked on the device is dependent on the size of the device package

LM309K

Abstract: nsc marking QML MARKING DETAILS 40 lead ceramic flatpack ALPHA YEAR DATE CODE 5962-9553601QPA LM7171AMJ-QML top marking codes CERAMIC FLATPACK ALPHA YEAR CODE
Contextual Info: N Top Marking Information for Mil/Aero Products TOP MARK INFORMATION Not all marks shown may appear on parts 883 883&&38510 38510Date DateCode Code 2nd Last 2nddigit: digit: Lastdigit digitof ofthe theyear yearwafer wafersort sortwas wasperformed. performed.

NSCD024H

Contextual Info: ZOWIE Schottky Barrier Diode 40V / 200mA NSCD024H OUTLINE DIMENSIONS Case : 0402-S FEATURES Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low power loss, High efficiency

iso 1043-1

Abstract: DIN 6120 iso 1043-1 polypropylene j1344 sae j1344 W28B D1972 DIN6120 d24j TA11A
Contextual Info: Packing Considerations Methods, Materials and Recycling Transport Media All NSC commercial devices are prepared, inspected and packed to insure proper physical support and protection during handling, transportation and shipment. Assembled devices are packed in one or more of the following container

iso 1043-1

Abstract: DIN 6120 sae j1344 j1344 w28c iso 1043-1 polypropylene bga Shipping Trays MEC34 BGA OUTLINE DRAWING TSOP package tray
Contextual Info: Packing Considerations Methods, Materials and Recycling Transport Media All NSC commercial devices are prepared, inspected and packed to insure proper physical support and protection during handling, transportation and shipment. Assembled devices are packed in one or more of the following container

Contextual Info: Approval Document Hardware Documentation DSH000159_001EN July 21, 2011 D a vt laai m A re P d nSci h nee ae rI nyt f D o ram t aation Sheet HAL 202 Hall-Effect Sensor Edition July ? 21, 2011 DSH000159_001EN AI000?_00?EN 6251-?-?PD HAL202 DATA SHEET

Contextual Info: Hardware Documentation AI 000157_001EN April 19, 2011 D a vt laai m A re P d nSci h nee ae rI nyt f D o ram t aation Sheet HAL 1821.HAL1823 Linear Hall Effect Sensors Family Edition May April 6, ? 1, 2011 2011 DSH000157_001EN AI000157_001EN 6251-?-?PD

smd marking 2xY

Contextual Info: Approval Document Hardware Documentation DSH000141_004EN Sept. 8, 2011 D a vt laai m A re P d nSci h nee ae rI nyt f D o ram t aation Sheet HAL 2xy Hall-Effect Sensor Family Edition Sept. ? 22, 2011 DSH000141_004EN AI000?_00?EN 6251-?-?PD HAL 2xy

2N6719

Abstract: National Semiconductor 2N5401 D40N2 mpsa92 2N5551 MMBT5551 MMBTA42 MMBTA92 MPSA42 MPSA43
Contextual Info: D High VoltageAmplifiers Device 300 b S Q 1 1 3 0 O O B ^ S B E bfll • NSCS NATL S E I H C O N D h f f le mA Max Min (mA) 2N6719 500 40 30 MMBTA42 500 40 30 0.5 20 MPSA42 500 40 30 0.5 20 NPN PNP MMBTA92 MPSA92 h V cE fsa t) >C * U V CEO<sust) (Volts)

MMBFJ174

Abstract: MMBF5115 p1086 MMBFJ177
Contextual Info: h&E D • b 5 D 1 1 3 D □OB'lSDl TDS ■ NSC5 P Channel V p @ V DSlD Device R BVgss V Min (V) (V) Min Max m d S( oii ) (ß ) Min @ ID Ciss Crss ton toff (PF) Max (PF) Max (ns) Max (ns) Package Max (mA) 2N5018 30 10 -15 1000 75 1 45 10 35 65 TO-18(11 )

PN3563

Abstract: MPSH24 2N3663 2N5179 2N5770 2N918 BF199 MMBT5179 MMBT918 MPS5179
Contextual Info: _ _ - . tat B RF Amplifiers Devices V CE0{Sint h hFE @ Iq Vjj Volts) Min (mA) Max 2N3663 12 50 20 8.0 2N5179 12 50 25 3.0 NPH PNP Min mA • t.SD113G 0 0 3 ^ 5 2 0 ISA ■ NSCS NATL SEnlC0N]> (discrete) *T C#|, NF (dB) @ f (MHZ) Min PF Max Max 10 700

BC337/BC327

Abstract: BC182 BC547 BC237 NATIONAL SEMICONDUCTOR BC327 NATIONAL SEMICONDUCTOR T0-92 BC547 to92 BC237 national 2N4032 2N6554 PN2907A
Contextual Info: •c NATL 50 45 mA Max Min Max 2N4032 1000 100 300 2N6554 NPN 60 SEniCOND (DISCRETE ) (Volts) Min PNP NF (dB) Max 372 • NSCS P d (Arnb) Package (mW) @25°C mA (MHz) Min mA 100 150 50 TO-39 800 1500 80 300 50 75 50 T0-202(55) 1333 MMBT2907A 600 100 300

Zener diode marking 25J

Abstract: MARKING 25J TS04700 TS05100 TS05600 TS0600 TS06200 TS07100 TS07500 TS10000
Contextual Info: MICROSEflI CORP SÌE D bllSflbS QDGni3 TTS nsc TS04700 thru TS10000 Microsemi Corp. f TtieOKxjee SCOTTSDALE, AZ SANTA ANA. CA Formoreinfóriìmtionc&U: m 714 979-8220 LOW VOLTAGE AVALANCHE DIODES FEATURES • Low voltage avalanche zener diodes. • Considerably sharper breakdown than standard 4-10 volt zeners.

2N3819 NATIONAL SEMICONDUCTOR

Abstract: National 2N3819 2n3819 surface mount 2N5247 MMBFJ304 MMBFJ305 N CHANNEL JFET 2N3819 2N5951 PN4416 2N5246
Contextual Info: bflE D • bSD113D □Q3cm cn 5S7 NSCS NATL SEMICOND DISCRETE TO -52 N Channel DG V p @ V DslB D ¥ GSS Device m (V) Min (V) Min Max 2N3819 25 RelYfsl Re(Yos) (mmho) @ f (nmho) @ f im Ciss Crss (PF) (PF) Max Max Min (MHz) Max (MHz) 8 15 2 1.6 100 NF (dB)@ Rg = 1k

Contextual Info: Approval Document Hardware Documentation DSH 000158_001EN April 19, 2011 D a vt laai m A re P d nSci h nee ae rI nyt f D o ram t aation Sheet HAL 1820 Programmable Linear Hall Effect Sensor Edition April ? 28, 2011 2010 DSH000158_001EN AI000149_002EN

Contextual Info: Approval Document Hardware Documentation DSH000026_005EN Aug. 22, 2011 D tlai m Adava Pre nSce i nhaeIre nytfoDrat maation Sheet HAL 556, HAL 560, HAL 566 Two-Wire Hall-Effect Sensor Family Edition Aug. 29, 2011 Edition ? DSH000026_005EN AI000?_00?EN

Contextual Info: Document 172-1 SMT Power Inductors – DO5022P Series • Part numbers in bold are recommended for use with NSC SIMPLE SWITCHER switching regulators • Low dc resistance keeps power losses to a minimum Designer’s Kit C311 contains 3 of each part Core material Ferrite

Contextual Info: Document 172-1 SMT Power Inductors – DO5022P Series • Part numbers in bold are recommended for use with NSC SIMPLE SWITCHER switching regulators • Low dc resistance keeps power losses to a minimum Designer’s Kit C311 contains 3 of each part Core material Ferrite

Contextual Info: Document 179-1 SMT Power Inductors – DO3316P Series • Part numbers in bold are recommended for use with NSC SIMPLE SWITCHER switching regulators • High energy storage and very low resistance Designer’s Kit C378 contains 3 of each 20% part Core material Ferrite

Contextual Info: Document 179-1 SMT Power Inductors – DO3316P Series • Part numbers in bold are recommended for use with NSC SIMPLE SWITCHER switching regulators • High energy storage and very low resistance Designer’s Kit C378 contains 3 of each 20% part Core material Ferrite

Contextual Info: Document 179-1 SMT Power Inductors – DO3316P Series • Part numbers in bold are recommended for use with NSC SIMPLE SWITCHER switching regulators • High energy storage and very low resistance Designer’s Kit C378 contains 3 of each 20% part Core material Ferrite

Contextual Info: Approval Document Hardware Documentation DSH000160_001EN July 27, 2011 D a vt laai m A re P d nSci h nee ae rI nyt f D o ram t aation Sheet HAL 2850 Linear Hall-Effect Sensor with PWM Output Edition Aug 2011 June9,22, ? 2011 DSH000160_001EN 6251-?-?PD