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    MARKING PC SOT-23 TRANSISTOR Search Results

    MARKING PC SOT-23 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    MARKING PC SOT-23 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot-23 2L

    Abstract: No abstract text available
    Text: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 APPLICATIONS 3 *Telephone Switching Circuit *Amplifier MARKING SOT-23


    Original     		PDF MMBT5401 -150V 350mW OT-23 QW-R206-011 sot-23 2L

    sot-23 Marking 2L

    Abstract: MMBT5401 sot23 marking 2l
    Text: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 3 APPLICATIONS *Telephone Switching Circuit *Amplifier SOT-23 MARKING


    Original     		PDF MMBT5401 -150V 350mW OT-23 QW-R206-011 sot-23 Marking 2L MMBT5401 sot23 marking 2l

    transistor marking 3em

    Abstract: transistor marking code SOT-23 TRANSISTOR K 135 J 50 SOT-23 transistor code PB TRANSISTOR K 135 transistor marking code 3EM SOT-23 marking 3EM sot-23 transistor code PB marking code PC sot-23 3em sot-23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High transition frequency. z Power dissipation. PC=350mW MMBTH10 Pb Lead-free APPLICATIONS z VHF/UHF Transistor. SOT-23 ORDERING INFORMATION Type No. Marking Package Code


    Original     		PDF MMBTH10 350mW) OT-23 BL/SSSTC125 transistor marking 3em transistor marking code SOT-23 TRANSISTOR K 135 J 50 SOT-23 transistor code PB TRANSISTOR K 135 transistor marking code 3EM SOT-23 marking 3EM sot-23 transistor code PB marking code PC sot-23 3em sot-23

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors S9014LT1 NPN TRANSISTOR FEATURES • High total power dissipation.(pc=0.2w) · Complementary to S9015LT1 MARKING: J6 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF OT-23 S9014LT1 S9015LT1 30MHz

    MMBT5401

    Abstract: MMBT5401-AE3-R MMBT5401L MMBT5401L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES 2 *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 1 MARKING 3 2L SOT-23 *Pb-free plating product number:MMBT5401L


    Original     		PDF MMBT5401 -150V 350mW OT-23 MMBT5401L MMBT5401-AE3-R MMBT5401L-AE3-R QW-R206-011 MMBT5401 MMBT5401L MMBT5401L-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1N SOT-23 1: EMITTER 2: BASE


    Original     		PDF MMBTA14 MMBTA14 OT-23 CHARACTERISTIC50 100mA 100mA 100MHz QW-R206-038

    MMBTA13

    Abstract: No abstract text available
    Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE


    Original     		PDF MMBTA13 MMBTA13 OT-23 QW-R206-006

    MMBTA13

    Abstract: No abstract text available
    Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE


    Original     		PDF MMBTA13 MMBTA13 OT-23 100ms QW-R206-006

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA14 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1N SOT-23 1: EMITTER 2: BASE


    Original     		PDF MMBTA14 MMBTA14 OT-23 QW-R206-038

    Untitled

    Abstract: No abstract text available
    Text: KST3904 NPN Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 1A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3904 OT-23

    Untitled

    Abstract: No abstract text available
    Text: KST3904 NPN Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 1A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3904 OT-23

    KST3906

    Abstract: WH*s
    Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3906 OT-23 KST3906 WH*s

    Untitled

    Abstract: No abstract text available
    Text: KST3906 PNP Epitaxial Silicon Transistor Features • General Purpose Transistor 3 Marking 2A 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TSTG Ta = 25°C unless otherwise noted Parameter Collector-Base Voltage


    Original     		PDF KST3906 OT-23

    MMBT3906 UTC

    Abstract: No abstract text available
    Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 2A 3 SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


    Original     		PDF MMBT3906 350mW MMBT3904 OT-23 QW-R206-013 MMBT3906 UTC

    mmbt3904 complementary

    Abstract: MMBT3904 MMBT3906 6030v
    Text: UTC MMBT3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3906 2 1 MARKING 3 1A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


    Original     		PDF MMBT3904 350mW MMBT3906 OT-23 QW-R206-012 100MHz mmbt3904 complementary MMBT3904 MMBT3906 6030v

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =350mW *Complementary to MMBT3904 2 1 MARKING 3 2A SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


    Original     		PDF MMBT3906 350mW MMBT3904 OT-23 QW-R206-013 -10mA -50mA 100MHz

    CQ 523

    Abstract: MARKING CODE cq sot-89
    Text: LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411KXLT1G FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT– 23 TO–236AB Shipping


    Original     		PDF L2SC2411KXLT1G L2SA1036K 236AB) L2SC2411KPLT1G 3000/Tape L2SC2411KPLT3G 10000/Tape L2SC2411KQLT1G L2SC2411KQLT3G CQ 523 MARKING CODE cq sot-89

    MGSF1P02LT1

    Abstract: MGSF1P02LT3
    Text: MOTOROLA Order this document by MGSF1P02LT1/D SEMICONDUCTOR TECHNICAL DATA  MGSF1P02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–


    Original     		PDF MGSF1P02LT1/D MGSF1P02LT1 MGSF1P02LT1 MGSF1P02LT3

    ahr 49 transistor

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB


    Original     		PDF L2SB1197KXLT1G L2SD1781K 236AB) L2SB1197KQLT1G 3000/Tape L2SB1197KQLT3G 10000/Tape L2SB1197KRLT1G L2SB1197KRLT3G ahr 49 transistor

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Pb−Free Package is Available. ORDERING INFORMATION Device L2SC2412KXLT1G Marking Shipping L2SC2412KQLT1G BQ 3000 Tape & Reel L2SC2412KQLT3G BQ 10000 Tape & Reel L2SC2412KRLT1G BR 3000 Tape & Reel


    Original     		PDF L2SC2412KXLT1G L2SC2412KQLT1G L2SC2412KQLT3G L2SC2412KRLT1G L2SC2412KRLT3G L2SC2412KSLT1G L2SC2412KSLT3G

    MMBF0201N

    Abstract: MMBF0201NLT1 MMBF0201NLT3 marking N1
    Text: MOTOROLA Order this document by MMBF0201N/D SEMICONDUCTOR TECHNICAL DATA Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors MMBF0201N Motorola Preferred Device N–CHANNEL ENHANCEMENT–MODE TMOS MOSFET rDS(on) = 1.0 OHM These miniature surface mount MOSFETs utilize Motorola’s High


    Original     		PDF MMBF0201N/D MMBF0201N MMBF0201N/D* MMBF0201N MMBF0201NLT1 MMBF0201NLT3 marking N1

    BSS84LT1

    Abstract: BSS84LT3
    Text: MOTOROLA Order this document by BSS84LT1/D SEMICONDUCTOR TECHNICAL DATA  BSS84LT1 Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the Greenline Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High


    Original     		PDF BSS84LT1/D BSS84LT1 BSS84LT1 BSS84LT3

    c 879 transistor

    Abstract: Transistor bc 879 S879T transistors BC 293 low noise transistors vhf bc238C S779T
    Text: TELEFUNKEN ELECTRONIC file D • fi'JSOO'lb 0005432 T H A L 6 6 i Marked with: 779 T n ilL itF IU lK lK iK l electronic Creative Technologies Marked with: 879 S 779 T S 879 T Silicon PNP RF Transistor Applications: UHF/VHF high current input and mixer stages


    OCR Scan     		PDF S779T S879T 569-GS c 879 transistor Transistor bc 879 S879T transistors BC 293 low noise transistors vhf bc238C

    ALG TRANSISTOR

    Abstract: transistor PNP ALG transistor BC 368
    Text: TELEFUNKEN ELECTRONIC 17E D • ÔTSQQTb DOQ'ÎBfl? 7 IÂLG6 BC 369 m ilFW K IM electronic CreativeTechnokjgm _ r - a i- a a Silicon PNP Epitaxial Planar Transistor Applications: Complementary audio amplifier, driver and output stages for low supply voltage


    OCR Scan     		PDF 15A3DIN ALG TRANSISTOR transistor PNP ALG transistor BC 368