KRA304
Abstract: marking pd
Text: SEMICONDUCTOR KRA304 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PD 1 2 Item Marking Description Device Mark PD KRA304 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KRA304
KRA304
marking pd
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marking pd
Abstract: KRA104S
Text: SEMICONDUCTOR KRA104S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PD 1 2 Item Marking Description Device Mark PD KRA104S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KRA104S
OT-23
marking pd
KRA104S
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MARKING PD
Abstract: KRA554U
Text: SEMICONDUCTOR KRA554U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking PD 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PD KRA554U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs
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KRA554U
MARKING PD
KRA554U
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KRA754E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA754E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking PD 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PD KRA754E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRA754E
KRA754E
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MARKING PD
Abstract: KRA754U
Text: SEMICONDUCTOR KRA754U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking PD 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PD KRA754U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRA754U
MARKING PD
KRA754U
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KRA554E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRA554E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking PD 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark PD KRA554E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRA554E
KRA554E
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAT54/A/C/S SCHOTTKY DIODES SOT-23 FEATURES Power Dissipation PD : 200 mW（Tamb=25℃） BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Maximum Ratings @TA=25
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OT-23
BAT54/A/C/S
OT-23
BAT54
BAT54A
BAT54C
BAT54S
100mA
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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Marking STMicroelectronics
Abstract: STMicroelectronics marking marking 38 QREP9901 NV700 Marking 47 FDIP STMicroelectronics TO-3 marking
Text: QREP9901 QUALIFICATION REPORT Laser Marking for PLCC, TSOP, SO, PDIP and FDIP Packages INTRODUCTION Laser marking will be used as an alternative manufacturing solution to the ink marking. This change will allow to improve the marking cycle time and therefore the service to the ST customers.
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QREP9901
QREP9901
Marking STMicroelectronics
STMicroelectronics marking
marking 38
NV700
Marking 47
FDIP
STMicroelectronics TO-3 marking
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Marking STMicroelectronics
Abstract: trials STMicroelectronics marking marking 38 PPT Diode data sheet specifications TSOP IR QREP9901 STMicroelectronics TO-3 marking
Text: QREP9901 QUALIFICATION REPORT Laser Marking for PLCC, TSOP, SO, PDIP and FDIP Packages INTRODUCTION Laser marking will be used as an alternative manufacturing solution to the ink marking. This change will allow to improve the marking cycle time and therefore the service to the ST customers.
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QREP9901
QREP9901
Marking STMicroelectronics
trials
STMicroelectronics marking
marking 38
PPT Diode data sheet specifications
TSOP IR
STMicroelectronics TO-3 marking
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VISHAY MARKING CODE
Abstract: Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S
Text: PDD Marking www.vishay.com Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band
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DO-204AL/DO-204AC/DO-201AD/GP20/1
5KE/P600ï
P6KE22
GP15M
0621X
5KE15A
1N6275A
SB340
VISHAY MARKING CODE
Vishay DaTE CODE
GENERAL SEMICONDUCTOR MARKING EG SMB
Part marking
MBL104S
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GENERAL SEMICONDUCTOR MARKING SJ SMA
Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number
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DO-204AL/DO-204AC/DO-201AD/GP20/1
5KE/P600
P6KE22
GP15M
0621X
5KE15A
1N6275A
SB340
GENERAL SEMICONDUCTOR MARKING SJ SMA
VISHAY MARKING SJ
VISHAY MARKING SJ SMA
Vishay diodes code marking
bys 025
tvs SMC MARKING
VISHAY MARKING CODE
TVS AE SMA
SMC MARKING SJ
MR06X
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PD3S160
Abstract: No abstract text available
Text: PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: Alert Type: April 18, 2007 August 23, 2006 Discrete Part Marking DCS/PCN-1071 PCN #: PCN #: 1071 TITLE PD3S Family Marking Change IMPACT Device Marking Code Only DESCRIPTION OF CHANGE
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DCS/PCN-1071
PD3S140
PD3S130L
PD3S130H
PD3S160
PD3S0230
PCN-1071
PD3S160
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes BAS40W/-04/-05/-06 SCHOTTKY DIODE SOT-323 FEATURES z Low forward voltage z Fast switching BAS40W MARKING:43h BAS40W-04 MARKING: 44 BAS40W-05 MARKING: 45 BAS40W-06 MARKING: 46
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OT-323
BAS40W/-04/-05/-06
OT-323
BAS40W
BAS40W-04
BAS40W-05
BAS40W-06
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kl4 diode
Abstract: BAT54S kl1 BAT54A kl3 diode bat54 KL4 SOT-23 bat54a sot-23 BAT54 kl3 marking KL4 kl1 diode
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAT54/A/C/S SCHOTTKY DIODES SOT-23 FEATURES z Extremely Fast Switching Speed BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Maximum Ratings @TA=25℃
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OT-23
BAT54/A/C/S
OT-23
BAT54
BAT54A
BAT54C
BAT54S
100mA
kl4 diode
BAT54S kl1
kl3 diode
KL4 SOT-23
bat54a sot-23
BAT54 kl3
marking KL4
kl1 diode
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAT54/A/C/S SCHOTTKY BARRIER DIODE SOT-23 FEATURES z Extremely Fast Switching Speed BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Maximum Ratings @Ta=25℃
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OT-23
BAT54/A/C/S
OT-23
BAT54
BAT54A
BAT54C
BAT54S
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diodes SOT-523 BAS40T/-04T/-05T/-06T SCHOTTKY BARRIER DIODE FEATURES z Low forward voltage z Fast switching BAS40T MARKING:43 BAS40-04T MARKING: 44 BAS40-05T MARKING: 45 BAS40-06T MARKING: 46
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OT-523
OT-523
BAS40T/-04T/-05T/-06T
BAS40T
BAS40-04T
BAS40-05T
BAS40-06T
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes BAS40W/-04/-05/-06 SCHOTTKY DIODE SOT-323 FEATURES z Low forward voltage z Fast switching BAS40W MARKING:43• BAS40W-04 MARKING: 44 BAS40W-05 MARKING: 45 BAS40W-06 MARKING: 46
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OT-323
BAS40W/-04/-05/-06
OT-323
BAS40W
BAS40W-04
BAS40W-05
BAS40W-06
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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BAS40W
Abstract: BAS40W-04 BAS40W-05 BAS40W-06
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes SOT-323 BAS40W/-04/-05/-06 SCHOTTKY DIODE FEATURES z Low Forward Voltage z Fast Switching BAS40W MARKING: 43• BAS40W-06 MARKING: 46 BAS40W-05 MARKING：45 BAS40W-04 MARKING：44
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OT-323
OT-323
BAS40W/-04/-05/-06
BAS40W
BAS40W-06
BAS40W-05
MARKING45
BAS40W-04
MARKING44
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BAS40
Abstract: BAS40-04 BAS40-05 BAS40-06
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes SOT-23 BAS40/-04/-05/-06 SCHOTTKY DIODE FEATURES z Low Forward Voltage z Fast Switching BAS40 MARKING: 43• BAS40-06 MARKING: 46 BAS40-05 MARKING：45 BAS40-04 MARKING：44
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OT-23
OT-23
BAS40/-04/-05/-06
BAS40
BAS40-06
BAS40-05
MARKING45
BAS40-04
MARKING44
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