MARKING PD Search Results

PD3S160

Contextual Info: PRODUCT CHANGE NOTICE Contact Date: Implementation Date: Alert Category: Alert Type: April 18, 2007 August 23, 2006 Discrete Part Marking DCS/PCN-1071 PCN #: PCN #: 1071 TITLE PD3S Family Marking Change IMPACT Device Marking Code Only DESCRIPTION OF CHANGE

PDP-100

Abstract: RK73Z
Contextual Info: resistors RK73Z zero ohm jumper chip resistor EU features • Silver element • Meets or exceeds EIA 575, EIAJ RC 2690A, EIA PDP-100, MIL-R-55342F • Marking: White “000” on black protective coat 1F black with no marking 1H and 1E sizes are green with no marking

bc490

Abstract: BC490B BC490A BC490AZL1 BC490BZL1
Contextual Info: BC490, BC490A, BC490B High Current Transistors PNP Silicon • Device Marking: 490 Device Marking: 490A Device Marking: 490B http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO –80 Vdc Collector-Base Voltage

TCBAV19W

Contextual Info: PRELIMINARY DATASHEET 400mW SOD-123 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package High Voltage & High Conductance Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG Device Type Device Marking TCBAV19W TCBAV20W TCBAV21W

Contextual Info: PRELIMINARY DATASHEET 400mW SOD-123 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package General Purpose Application Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TJ Device Marking D1 D2 D3 TA = 25°C unless otherwise noted

MARKING 4 SOD523

Contextual Info: TAK CHEONG 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package General Purpose Application High Speed Switching Diode Absolute Maximum Ratings Symbol PD TSTG TJ DEVICE MARKING CODE: Device Type Device Marking TC1SS400 E4 TA = 25°C unless otherwise noted

L9014

Abstract: L9015QLT1G L9015RLT1G L9015SLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9015XLT1G FEATURE 3 ƽComplementary to L9014. ƽ We declare that the material of product compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping

L2SC1623QLT1G

Abstract: L2SC1623RLT1G L2SC1623SLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Series Pb-Free packkage is available DEVICE MARKING AND ORDERING INFORMATION 3 Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel L2SC1623QLT3G L5 10000/Tape&Reel L2SC1623RLT1G L6 3000/Tape&Reel

LBAS20LT1G

Abstract: marking jr
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20LT1G FETURE • We declare that the material of product 3 compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAS20LT1G JR 3000/Tape&Reel LBAS20LT3G

smd transistor marking wy

Abstract: wy smd transistor SMD Marking jx smd 123 BAV19W BAV20W BAV21W BAV19W-BAV21W continental SOD123
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SURFACE MOUNT SWITCHING DIODES BAV19W, BAV20W, BAV21W SOD-123 Formed SMD Package Marking: As indicated below with cathode band Marking BAV19W - WY BAV20W - WZ BAV21W - JX

marking 5d

Contextual Info: MMSD914 MMSD914 SOD123 Top Marking: 5D COLOR BAND DENOTES CATHODE TOP MARKING: 5D SOD123 BAND DENOTES CATHODE. High Conductance Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

LBSS123LT1G

Abstract: LBSS123LT3G
Contextual Info: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate

marking codes fairchild

Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
Contextual Info: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to

SAYFP1G95AA0B00

Abstract: SAYFP1G95CA0B00 SAYFP1G95 SAYFP897MCA0B00 SAYFP897MBA0B00 SAYZY1G88CA0B00 SAYFP SAYZY1G95CA0B00 SAYFP836MCA0F00 SAYFP836MAJ0F00
Contextual Info: Filters for Communication Equipment Duplexers SAW Duplexers o SAYZY Series 3.0±0.2 6 (9) (5) (8) Dot Marking (ø0.4) 2.5±0.2 (7) (4) (1) (2) (0.20) (3) (C0.30) (3) (1) (2) 0.80±0.10 (0.10) (8) Marking: Laser Printing 9-0.50±0.10 6-1.15±0.10 6-0.90±0.10

TC1N4148W

Abstract: Marking "D1"
Contextual Info: PRELIMINARY DATASHEET 400mW SOD-123 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package General Purpose Application Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TJ Power Dissipation Storage Temperature Range Value

f 1010

Abstract: 7105 irf1010
Contextual Info: PD - 95947 IRF737LCPbF • Lead-Free www.irf.com 12/20/04 IRF737LCPbF 2 www.irf.com IRF737LCPbF www.irf.com 3 IRF737LCPbF 4 www.irf.com IRF737LCPbF www.irf.com 5 IRF737LCPbF 6 www.irf.com IRF737LCPbF www.irf.com 7 IRF737LCPbF TO-220AB Package Outline TO-220AB Part Marking Information

Contextual Info: TAK CHEONG 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG Device Type TCRB520S-30 Device Marking 1B TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range

MARKING 1B sod523

Abstract: 1B Marking DIODE marking 1B
Contextual Info: TAK CHEONG 200mW SOD-523 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode Absolute Maximum Ratings Symbol PD TSTG Device Type TCRB520S-30 Device Marking 1B TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range

Amplifier transistor

Contextual Info: UTC MMBTA06/56 AMPLIFIER TRANSISTOR NPN MMBTA06 PNP MMBTA56 FEATURES *Collector-Emitter Voltage: VCEO=80V *Collector Dissipation: PD=350mW 3 1 MARKING MMBTA06 MMBTA56 2 2G 1G SOT-23 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS TA=25°C PARAMETER

TR0805

Abstract: nicr 8020
Contextual Info: Thin Film Chip Resistor—TR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (NiCr) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Epoxy) 4 Barrier Layer (Ni) 8 Marking ■ Application — Medical equipments, Military equipments

eia marking code

Abstract: MARKING 1F EIA 481 PD rectifier transistor marking 1f marking row
Contextual Info: 10MQ040N Preliminary Data Sheet PD-20518 rev. C 03/99 Tape & Reel Information NOTE: 1. OUTLINE CONFORMS TO EIA-481. Dimensions in millimeters and inches Marking & Identification Each device has 4 characters, configurated two digits on two rows, for identification. The first row designates the

E192

Abstract: TR1210 25PPM nicr 8020
Contextual Info: Thin Film Chip Resistor—TR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (NiCr) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Epoxy) 4 Barrier Layer (Ni) 8 Marking ■ Application — Medical equipments, Military equipments

25PPM

Abstract: TR1218
Contextual Info: Thin Film Chip Resistor—TR Series • Construction 1 Alumina Substrate 5 External Electrode Sn 2 Bottom Electrode (Ag) 6 Resistor Layer (NiCr) 3 Top Electrode (Ag/Pd) 7 Primary Overcoat (Epoxy) 4 Barrier Layer (Ni) 8 Marking ■ Application — Medical equipments, Military equipments

686 CAPACITOR

Abstract: 20ARMS
Contextual Info: Capacitors > Polymer Capacitor Data Sheet Polymer Aluminum Electrolytic Capacitors ECASD61A686M015K00 68µF, 10Vdc RoHS regulation conformity parts L Capacitance Code W 227 0D Rated Voltage Code Polarity Indicator Bar (+) T Marking example: ECASD40D227M009K00