MARKING PK SOT Search Results

marking PK

Abstract: KRA110S marking pk sot
Contextual Info: SEMICONDUCTOR KRA110S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PK 1 2 Item Marking Description Device Mark PK KRA110S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

BAT400D

Contextual Info: BAT400D SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 3 1 2 Marking Code: PK SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 40 V Working Peak Reverse Voltage VRWM 40 V VR 40 V VR(RMS)

BAT400D

Abstract: MARKING CODE PK pk sot-23 MARKING CODE PK sot-23
Contextual Info: BAT400D SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 3 2 1 Marking Code: PK SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 40 V Working Peak Reverse Voltage VRWM 40 V VR 40 V VR(RMS)

Contextual Info: BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series Preferred Devices General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount

BC847 SOT363

Abstract: BC847 dual marking 1F BC557 BC557 bc556 marking pk sot
Contextual Info: BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 Dual General Purpose Transistors http://onsemi.com NPN Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.

BC847 dual marking 1F

Contextual Info: BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series Dual General Purpose Transistors http://onsemi.com NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

BC557 bc556

Abstract: bc557 BC556 BC858CDW1T1
Contextual Info: BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is

BC557

Abstract: BC557 bc556 bc857 sot363 marking code 04 sot-363 marking 3b sot363 PNP BC558 BC858CDW1T1
Contextual Info: BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is

SAT MARKING P

Abstract: LBC848BDW1T1G LBC847CDW1T1G LBC847BDW1T1G BC846 BC847 BC848 dual BC847 LBC847CDW1T1 bc846 SOT363
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. LBC846BDW1T1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is

LBC846ADW1T1G

Abstract: BC847 dual marking 1F BC848 BC846 BC847 BC847 dual 1G1K
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G S-LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G S-LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. LBC85* DW1T1G S-LBC85* DW1T1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846ADW1T1G LBC846BDW1T1G NPN Duals LBC847BDW1T1G LBC847CDW1T1G These transistors are designed for general purpose amplifier LBC848BDW1T1G applications. They are housed in the SOT–363/SC–88 which is

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. S-LBC846ADW1T1G

operation of BC557 TRANSISTOR

Abstract: bc557 LBC856BDW1T1 sot-36
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC856*DW1T1 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. • Device Marking:

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements.

LBC856BDW1T1G

Abstract: LBC857CDW1T1G LBC858BDW1T1G BDW1T1G BC856 BC857 BC858 BC858CDW1T1G BDW1T1
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements.

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. LBC85* DW1T1G S-LBC85* DW1T1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is