MARKING R25 SOT23 Search Results

2SC3356

Abstract: marking r25 sot23 r25 marking NPN R25 QW-R206-024 2SC3356 R25 sot-23
Contextual Info: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER

Contextual Info: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER

2SC3356R25

Abstract: 2SC3356 2SC3356R 2SC3356 r25 r25 marking R25 2sc3356 2SC3356 R25 sot-23
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3356 Features • • • Low noise and high gain High power gain Marking Code: 2SC3356=R25 NPN Silicon Epitaxial Transistors Maximum Ratings

2SC3356 Application Note

Abstract: 2sc3356 2SC3356R25 2SC3356 r25
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3356 Features • • • • Low noise and high gain High power gain Marking Code: 2SC3356=R25 Case Material: Molded Plastic. UL Flammability

transistor smd 6z

Abstract: marking r25 sot23 smd marking code sot-23 infineon smd transistor 6z code marking 6z sot-23 SOT R25 kty11-6 transistor SOT23 1126 EHA07247 R25 3 pins
Contextual Info: Silicon Temperature Sensors KT- and KTY-Series Silicon Temperature Sensors KT110 KT130 KT210 KT230 KTY16-6 Data Sheet KTY11-x KTY13-x KTY21-x KTY23-x KTY19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient

KTY 110

Abstract: KTY 19M KTY 10-6 KTY 11-6 smd marking 6z KT 209 kty 1000 KTY 88 marking r25 sot23 KTY 10-7
Contextual Info: Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 16-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-x KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C – 60 F to 300 F

smd transistor 2xX

Abstract: smd TRANSISTOR sot-23 a2 marking r25 sot23 KTY 10-6 transistor Kty 10.6 SOT R25 smd sot-23 code marking 106 KT 100 tube KTY 19M SMD transistor 2x sot 23
Contextual Info: Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 16-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-x KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C – 60 F to 300 F

marking 4p sot23

Abstract: smd marking 271 Sot smd transistor marking n5
Contextual Info: Infineon tech n o Io g i e s Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 1 6-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-X KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient

Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents REF3312, REF3318, REF3320, REF3325, REF3330, REF3333 SBOS392C – AUGUST 2007 – REVISED MARCH 2014 REF33xx 3.9- A, SC70-3, SOT23-3 and UQFN-8, 30-ppm/°C Drift Voltage Reference

SMD transistor r24

Abstract: marking r25 sot23 R25 SMD transistor SOT R23 SOT R25 R24 smd Transistor R25 smd R24 marking NPN R25 marking r25 NPN
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC4226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise and high gain. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz

Contextual Info: Transistors IC SMD Type Product specification 2SC4226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise and high gain. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz +0.05 0.1-0.01

Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents REF3312, REF3318, REF3320, REF3325, REF3330, REF3333 SBOS392C – AUGUST 2007 – REVISED MARCH 2014 REF33xx 3.9- A, SC70-3, SOT23-3 and UQFN-8, 30-ppm/°C Drift Voltage Reference

Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents REF3312, REF3318, REF3320, REF3325, REF3330, REF3333 SBOS392C – AUGUST 2007 – REVISED MARCH 2014 REF33xx 3.9- A, SC70-3, SOT23-3 and UQFN-8, 30-ppm/°C Drift Voltage Reference

Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents REF3312, REF3318, REF3320, REF3325, REF3330, REF3333 SBOS392B – AUGUST 2007 – REVISED FEBRUARY 2014 REF33xx 3.9- A, SC70-3, SOT23-3 and UQFN-8, 30-ppm/°C Drift Voltage Reference

sot23-6 marking code 561

Abstract: R33f R33 marking sot23-5
Contextual Info: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents REF3312, REF3318, REF3320, REF3325, REF3330, REF3333 SBOS392B – AUGUST 2007 – REVISED FEBRUARY 2014 REF33xx 3.9- A, SC70-3, SOT23-3 and UQFN-8, 30-ppm/°C Drift Voltage Reference

transistor smd code marking 2406

Abstract: transistor SMD 1886 KTY82 KTY82-110 marking r25 sot23 KTY82-220 SMD code 747 marking code 1881 SMD KTY82/120/DG/B2,21
Contextual Info: KTY82 series Silicon temperature sensors Rev. 04 — 14 January 2008 Product data sheet 1. Product profile 1.1 General description The temperature sensors in the KTY82 series have a positive temperature coefficient of resistance and are suitable for use in measurement and control systems. The sensors are

SOT R23

Abstract: marking R24 2SC3356 SOT R25 r25 q
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

2SC3356

Abstract: 2SC3356 to 92 NPN R25 R24 marking DATASHEET marking r25 NPN r25 q
Contextual Info: 2SC3356 SOT-23-3L TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation 0. 35 1. 9 Collector current ICM: 0.1 A Collector-base voltage 20 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation 0. 35 1. 9 Collector current

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

transistor R24

Abstract: SOT R23 npn marking r25 marking r25 transistor marking r25 NPN 2sc3356 high power npn UHF transistor 2SC3356 R25 sot-23
Contextual Info: 2SC3356 SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 — Low noise amplifier at VHF, UHF and CATV band. — Low Noise and High Gain — High Power Gain 1.60 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: Transistors IC SMD Type Product specification 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain. 0.4 3

Contextual Info: 2SC3356 High-Frequency Amplifier Transistor NPN Silicon COLLECTOR 3 3 P b Lead Pb -Free 2 BASE 1 2 1 EMITTER FEATURES SOT-23 * Low noise amplifier at VHF, UHF and CATV band. * Low Noise and High Gain * High Power Gain MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SC3356 SMD

Abstract: marking r25 sot23 NPN R25 SOT R23 Transistor R25 smd 2SC335 r25 marking 2SC3356 R24 marking DATASHEET SMD R25
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 High power gain. 0.55 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz +0.1 1.3-0.1 +0.1 2.4-0.1 Low noise and high gain.