MARKING R25 TRANSISTOR Search Results

2SC3356

Abstract: marking r25 sot23 r25 marking NPN R25 QW-R206-024 2SC3356 R25 sot-23
Contextual Info: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER

Contextual Info: UTC 2SC3356 NPN SILICON EPITAXIAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER FEATURES *Low Noise and High Gain *High Power Gain 2 1 MARKING 3 R25 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS TA=25°C, unless otherwise specified PARAMETER

2SC3356R25

Abstract: 2SC3356 2SC3356R 2SC3356 r25 r25 marking R25 2sc3356 2SC3356 R25 sot-23
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3356 Features • • • Low noise and high gain High power gain Marking Code: 2SC3356=R25 NPN Silicon Epitaxial Transistors Maximum Ratings

2SC3356 Application Note

Abstract: 2sc3356 2SC3356R25 2SC3356 r25
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC3356 Features • • • • Low noise and high gain High power gain Marking Code: 2SC3356=R25 Case Material: Molded Plastic. UL Flammability

marking r25 NPN

Abstract: NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES 2SC4226W Pb z Low noise. z High gain. z Power dissipation. PC=150mW Lead-free APPLICATIONS z High frequency low noise amplifier. SOT-323 ORDERING INFORMATION Type No.

transistor code R24

Abstract: R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC3356W FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz z Pb Lead-free High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS

transistor code R24

Abstract: R24 marking code transistor Transistor R25 marking r25 NPN r25 transistor SOT R23 SOT R25 marking r25 NPN R25 R24 marking DATASHEET
Contextual Info: 2SC4226 NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE SOT-323 The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier

R24 marking

Abstract: 2SC3356 NPN R25 Transistor R25 r25 transistor SOT R25 marking r25 NPN R24 marking DATASHEET R25 2sc3356 r25 marking
Contextual Info: 2SC3356 2SC3356 SOT-323 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage 20 V V(BR)CBO: Operating and storage junction temperature range Unit: mm TJ, Tstg: -55℃ to +150℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current 0.1 A ICM: Collector-base voltage

SMD transistor r24

Abstract: marking r25 sot23 R25 SMD transistor SOT R23 SOT R25 R24 smd Transistor R25 smd R24 marking NPN R25 marking r25 NPN
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC4226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise and high gain. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz

Contextual Info: Transistors IC SMD Type Product specification 2SC4226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise and high gain. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz +0.05 0.1-0.01

2SC3356

Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
Contextual Info: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

GE 2646

Abstract: 2SC3356 r25 CD/GE S 2646
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS T he 2 S C 3 3 5 6 is an NPN silico n ep ita xia l tra n sisto r d e sig n e d for low Units: mm noise a m p lifie r at VH F, U H F and C A T V band.

2SC4226-T1

Abstract: 2SC4226-T1-A ne85630 NE85630-A 2SC4226T1a transistor s2p Transistor R25 NE85630A 2SC4226-A r23 transistor
Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary NE85630 / 2SC4226 Data Sheet R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor

transistor smd 6z

Abstract: marking r25 sot23 smd marking code sot-23 infineon smd transistor 6z code marking 6z sot-23 SOT R25 kty11-6 transistor SOT23 1126 EHA07247 R25 3 pins
Contextual Info: Silicon Temperature Sensors KT- and KTY-Series Silicon Temperature Sensors KT110 KT130 KT210 KT230 KTY16-6 Data Sheet KTY11-x KTY13-x KTY21-x KTY23-x KTY19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient

KTY 110

Abstract: KTY 19M KTY 10-6 KTY 11-6 smd marking 6z KT 209 kty 1000 KTY 88 marking r25 sot23 KTY 10-7
Contextual Info: Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 16-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-x KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C – 60 F to 300 F

smd transistor 2xX

Abstract: smd TRANSISTOR sot-23 a2 marking r25 sot23 KTY 10-6 transistor Kty 10.6 SOT R25 smd sot-23 code marking 106 KT 100 tube KTY 19M SMD transistor 2x sot 23
Contextual Info: Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 16-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-x KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C – 60 F to 300 F

marking r25

Abstract: transistor amplifier VHF/UHF NPN R25 hFE CLASSIFICATION Marking 24 2SC33 Transistor R25 R24 marking code transistor R24 marking DATASHEET SOT R23 SOT R25
Contextual Info: 2SC3356F NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES A Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain

SOT R23

Abstract: marking R24 2SC3356 SOT R25 r25 q
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

SOT R23

Abstract: 2SC3356 marking R24 r25 q
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, z Low Noise and High Gain z High Power Gain 3. COLLECTOR UHF and CATV band.

2SC3356

Abstract: 2SC3356 to 92 NPN R25 R24 marking DATASHEET marking r25 NPN r25 q
Contextual Info: 2SC3356 SOT-23-3L TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation 0. 35 1. 9 Collector current ICM: 0.1 A Collector-base voltage 20 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES 0.2 W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 PCM: 1. 02 Power dissipation 0. 35 1. 9 Collector current

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

transistor R24

Abstract: SOT R23 npn marking r25 marking r25 transistor marking r25 NPN 2sc3356 high power npn UHF transistor 2SC3356 R25 sot-23
Contextual Info: 2SC3356 SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 — Low noise amplifier at VHF, UHF and CATV band. — Low Noise and High Gain — High Power Gain 1.60 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)