MARKING RA3 Search Results

RA1100

Abstract: ZOV131 V151R varistor 102m
Contextual Info: 34m m Dual — Square Configuration Maida Style Number Recognitions To Safety Agency Standards M inim um Marking Mechanical Dimensions Y +/- 0.040" Y +/- 1.02mm T MAX. ZOV131 RA310 ZOV141RA330 ZO V151RA360 ZOV181RA39Û ZO V211RA430 ZO V231RA46Û ZOV251RA490

Contextual Info: Sta-Kon Termination Products Polycarbonate Insulated Fork Terminals Technical Information Material Electrolytic copper Plating Tin-plated Marking Wire size and bolt size stamped on the tongue Metal barrel Brazed seam to prevent barrel separation Insulation

RA340

Abstract: RA400 varistor 471 UM MARKING ra135
Contextual Info: LOW PROFILE SERIES SPECIFICATIONS 2 1 0 , 2 3 0 ,2 5 0 , and 2 7 0 VAC Varistors Maximum Ratinas Recognitions To Safety Agency Standards Maida Style Number Continuous N om inal Size M inim um Marking Electrical Characteristics Transient Energy A pp lie d V oltage

v1062

Abstract: 1414 marking
Contextual Info: LOW PROFILE SERIES SPECIFICATIONS 7 5 0 and 1 0 0 0 VAC V a ris to rs Recognitions To Safety Agency Standards Maida Style Number C ontinuous Nominal Size Minimum Marking Applied Voltage Maximum Ratings Transient Energy 10 X 1 0 0 0 usee R69* R65* R66* S66*

MT47H128M8CF-25

Abstract: 8 resistor array 10k smd 103
Contextual Info: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration

Contextual Info: 2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • Marking • Configuration

Contextual Info: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration

Contextual Info: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration

Theta JC of FBGA

Abstract: 256MbDDR2
Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration

BT 742

Abstract: DDR2 2gb x16 industrial DDR2 x16 vm 256MB DDR 400 MT47H DDR2 SDRAM Meg x 16 x 16 banks led MR11 MT47H16M16 DDR2-400 DDR2-533
Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration

Contextual Info: 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • Marking • Configuration

mt47h32m8bp-3

Abstract: TN-001
Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration

varistor 594 ph

Abstract: z151 marking 130 D669 z301 800 Z151-160 RA280
Contextual Info: D 6 s 6 e M a x i Part Number Actual Part Marking r i R a t i n g s Continuous Rated Voltage AC RMS DC Volts Volts e Electrical Rated Single Pulse Transipnt Energy Peak 10/1 OOOps 8/20ps Joules Amps Varistor Voltage @1 mA DC Min Max Volts Volts s Characteristics

256Mb

Abstract: DDR2-400 DDR2-533 DDR2-667 MT47H16M16 MT47H32M8 MT47H32M8BP-3
Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration

u68a equivalent

Abstract: MT47H128M8HQ-3
Contextual Info: 1Gb: x4, x8, x16 1.55V DDR2 SDRAM Features DDR2 SDRAM MT47R256M4 – 32 Meg x 4 x 8 banks MT47R128M8 – 16 Meg x 8 x 8 banks MT47R64M16 – 8 Meg x 16 x 8 banks Options1 • • • • • • • • • • • • • • • • • • • Marking • Configuration

W83778

Abstract: xd card flash controller 2001 gp74 joystick PS2 W83697SF MOA2 MOB2 ISO7816 PC99 RECS-80
Contextual Info: W83697SF WINBOND I/O W83697SF Data Sheet Revision History Pages Dates Version Version Main Contents on Web 1 n.a. 04/16/01 0.50 0.50 First published 2 111 04/27/01 0.51 0.51 Update the Top Marking 12/16/02 1.0 1.0 3 New Update 4 5 6 7 8 9 10 Please note that all data and specifications are subject to change without notice. All the

GBDriver

Abstract: TDK GBDriver GBDriver RA3 MARKING RA3 MARKING RA3 2 8G nand TDK CORE ic nand NAND flash memory TDK GBDriver datasheet
Contextual Info: GBDriver RA4 Controller IC For NAND Type Flash Memory To 8G Bytes, GBDriver series RA4 type WRITE RA3 READ RA4 XR 1 2 3 4 5 6 7 8 9 10 11 12 13 MB/s TDK CORPORATION NEXT 2 GBDriver RA4 1 GBDriver RA4 120 ns BUS cycle 60 ns Host I/F 4.5 to 5.5 V or 3.0 to 3.6V

RA351

Abstract: RA352 RA353 RA354 RA355 RA356 RA357
Contextual Info: RA351 THRU RA357 AUTOMOTIVE RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 35.0 Amperes Features Low cost Low leakage Low forward voltage drop High current capability Mechanical Data DIM ENSIONS Copper heat sink Tin-plated slug easy for soldering

Contextual Info: Sta-Kon Termination Products Polycarbonate Insulated Ring Terminals Technical Information Material Ordering Information Wire Size Cat. No. Range mm2 RZ3 0.25 - 0.75 RZ4 0.25 - 0.75 RZ5 0.25 - 0.75 RA3RR 0.5 - 1.5 RA4RR 0.5 - 1.5 RA5RR 0.5 - 1.5 RA6RR

RA3505

Abstract: RA351 RA352 RA354 RA356 RA358
Contextual Info: RA3505 . RA358 RA3505 . RA358 Silicon-Rectifiers – Button Diodes Silizium-Gleichrichter – Knopf-Zellen Version 2008-10-30 Nominal current Nennstrom 35 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50 . 800 V Plastic case Kunststoffgehäuse

RA3505

Contextual Info: RA3505 . RA358 RA3505 . RA358 Silicon-Rectifiers – Button Diodes Silizium-Gleichrichter – Knopf-Zellen Version 2014-07-30 6.2 4.2 ±0.2 Nominal current Nennstrom 35 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50 . 800 V Plastic case

Contextual Info: RA3505 . RA358 RA3505 . RA358 Silicon-Rectifiers – Button Diodes Silizium-Gleichrichter – Knopf-Zellen Version 2012-05-14 6.2 4.2 ±0.2 Nominal current Nennstrom 35 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50 . 800 V Plastic case

Contextual Info: MCC RA351GP THRU RA357GP
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Glass Passivated Chip Low Leakage, Low cost Low Forward Voltage Drop High Current Capability

Contextual Info: MCC RA351 THRU RA357
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Low Cost Low Leakage Low Forward Voltage Drop High Current Capability For Automotive Applications