MARKING RJA ON SEMICONDUCTOR Search Results

Contextual Info: 1N4728G-1N4758G Taiwan Semiconductor Small Signal Product 1W DO-41 Zener Volatge Regulators FEATURES - Zener voltage range 3.3 to 56Volts - DO-41 package JEDEC - Through-hole device type mounting - Hermetically sealed glass - Compression bonded construction

Contextual Info: 1N4728G ~ 1N4758G Taiwan Semiconductor Small Signal Product 1W DO-41 Zener Volatge Regulators FEATURES - Zener voltage range 3.3 to 56Volts - DO-41 package JEDEC - Through-hole device type mounting - Hermetically sealed glass - Compression bonded construction

369D

Abstract: NTD3055 NTD3055-150 NTD3055-150-1 NTD3055-150T4
Contextual Info: NTD3055−150 Power MOSFET 9.0 Amps, 60 Volts N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 9.0 AMPERES 60 VOLTS RDS on = 122 mW (Typ)

MBR20200CTG

Contextual Info: MBR20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier Features and Benefits • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg

MBRS2H100T3G

Abstract: B210G 403A-03 Schottky b210
Contextual Info: MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

test circuit MBR20200

Abstract: MBR20200CTG MBR20200CT
Contextual Info: MBR20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier Features and Benefits • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg

ZENER SINGLE COLOR CODE

Abstract: zener diodes color coded zener color codes colour code zener zener diode code color zener diode color code colour code diode zener 1W ZENER DIODE zener diode color code band 1w zener
Contextual Info: 1N4728G-1N4758G Pb 1W DO-41 Zener Voltage Regulators RoHS COMPLIANCE DO-41 Features — Zener Voltage Range 3.3. to 56Volts. — DO-41 Package JEDEC — Through-Hole Device Type Mounting — Hermetically Sealed Glass — Compression Bonded Construction — All External Suface Are Corrosion Resistant And

B210G

Abstract: Schottky b210
Contextual Info: MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low

zener diode c12

Abstract: ZENER SINGLE COLOR CODE c12 zener zener diode code color zener c12 MARKING band color code zener
Contextual Info: 1N4728G-1N4758G Pb 1W DO-41 Zener Voltage Regulators RoHS COMPLIANCE DO-41 Features — Zener Voltage Range 3.3. to 56Volts. — DO-41 Package JEDEC — Through-Hole Device Type Mounting — Hermetically Sealed Glass — Compression Bonded Construction — All External Suface Are Corrosion Resistant And

Contextual Info: MBR20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg

MBR20200CTG

Abstract: MBR20200CT MBR20200CT-G
Contextual Info: MBR20200CT SWITCHMODEt Power Rectifier Dual Schottky Rectifier Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg

B8H100G

Abstract: B8H100 MBRB8H100T4G B8H1 C146C marking 146C
Contextual Info: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and

b8h100g

Abstract: MBRB8H100T4G
Contextual Info: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and

b8h100g

Contextual Info: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and

b8h100g

Abstract: MBRB8H100T4G
Contextual Info: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

FDS6681Z

Contextual Info: FDS6681Z 30 Volt P-Channel PowerTrench MOSFET Features General Description • –20 A, –30 V. This P-Channel MOSFET is produced using Fairchild ® Semiconductor’s advanced PowerTrench process that RDS ON = 4.6 mΩ @ VGS = –10 V RDS(ON) = 6.5 mΩ @ VGS = –4.5 V

Contextual Info: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

b8h100g

Abstract: B8H100
Contextual Info: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

Contextual Info: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package http://onsemi.com This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N3416 Features • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA

2N3416

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N3416 Features • This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300mA

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTA64 Features • This device is designed for applications requiring extremely high current gain at currents to 800mA. Marking Code: MMBTA64=2V

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAT46W Features 200mW • High breakdown Voltage • Low turn-on voltage • • Guard ring construction for transient protection

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAT720 Features x x x • • • Very Low Forward Voltage Drop. Guard Ring Protected Untral Small Surface Mount Package