MARKING S07 SOT23 Search Results

marking code ce SOT23

Abstract: MOSFET MARKING 3F marking code 3a sot23 CE MARKING CODE
Contextual Info: Surface M ount Transistors NPN Transistors/SOT23 Type Num ber hpE @ VCE/IC M arking Code* Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 1D MMBT2222A IMBT/MMBT3904 MMBT4401 V ceo V CE SAT @ Ic /lß fT @ V ce/I c Cqb @ VCB V/m A max.V m A/m A

MOSFET MARKING 3F

Abstract: BT3904 sot23 s07 marking 702 sot23 Diode marking CODE 1M transistor marking 6c 2F PNP SOT23 marking code 2f 2F P marking NA MARKING SOT23
Contextual Info: Surface M o u n t Transistors NPN Transistors/SOT23 Type Num ber M arking Code* VcEO Volts 1P IN 2X 40 40 40 MMBTA05 MMBTA06 MMBT5551 1H 1G 3S MMBTA42 ID MMBT2222A IMBT/MMBT3904 MMBT4401 hpE@ VCE/IC VcE SAT@ Ic/Ib fT @ VCE/IC Cqb @ Vcb V/m A max.V mA/m A MHz

DS11301

Abstract: BS807 MARKING S07 SOT23
Contextual Info: BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly Mechanical Data Case: SOT-23, Plastic Terminals: Solderable per

MARKING S07

Abstract: BS807 transistor s07
Contextual Info: BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A Dim Min Max A 0.37 0.51 B 1.19

transistor s07

Abstract: n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR BS807 DS11301 sot23 s07 MARKING S07 MARKING S07 SOT23
Contextual Info: BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A D TOP VIEW G Mechanical Data

MARKING S07

Abstract: DS11301 BS807 MARKING S07 SOT23
Contextual Info: BS807 N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A D

DS11301

Contextual Info: BS807 VISHAY N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR /uT E M ir I P O W ER S E M IC O N D U C TO R J Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited tor Telephone Subsets Ideal for Automated Surface Mount Assembly

WMP7032

Abstract: WT-2307
Contextual Info: WMP7032 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERS 1 DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE Features: 2 SOURCE *Super high dense cell design for low Ros ON R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V

WT2307

Abstract: WT-2307
Contextual Info: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS ON R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V *Rugged and Reliable

Contextual Info: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 20 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V

Contextual Info: WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V

TRANSISTOR SOT-23 marking JE

Abstract: Diode SOT-23 marking JE BS807 MARKING S07 DS11301
Contextual Info: BS807 VISHAY N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR /Li T E M I ri / POWERSEMICONDUCTOR I Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly TOPiVIEW

SGM9114

Abstract: SGM9114YN6G video amplifier s07
Contextual Info: SGM9114 8MHz 5th Order Video Driver with 6dB Gain FEATURES PRODUCT DESCRIPTION The SGM9114 is single rail-to-rail 5th order output • Excellent Video Performance reconstruction filter with a -3dB bandwidth of 8MHz and a • 5th Order Reconstruction Filter

ats2300

Abstract: ZENER Diode b212 ECS MOTHERBOARD pcb CIRCUIT diagram teltone tls 3 ATS010 si3006-B Si3006-B-FT RJ11 4 PIN JACK MODULE SPEC SHEET so8e pad CR0402-16W-000T
Contextual Info: AN94 Si2401 M ODEM D ESIGNER ’ S G UIDE 1. Introduction This application note is intended to supplement the Si2401 data sheet and is divided into two sections: The "Functional Description" on page 4 and the "Software Design Reference" on page 15. The Hardware Design

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main