MARKING S1 SOT363 Search Results
MARKING S1 SOT363 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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| MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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| 54ACT244/B2A |
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54ACT244/B2A - Dual marked (5962-8776001B2A) |
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| ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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| MQ80186-8/BYC |
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80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) |
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MARKING S1 SOT363 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Si1901DL
Abstract: D234
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Si1901DL OT-363 SC-70 S-01886--Rev. 28-Aug-00 D234 | |
Si1902DL SOT-363
Abstract: marking code pa Si1902DL "marking code PA"
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Si1902DL OT-363 SC-70 S-21374--Rev. 12-Aug-02 Si1902DL SOT-363 marking code pa "marking code PA" | |
Si1901DL
Abstract: vishay siliconix code marking
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Si1901DL OT-363 SC-70 18-Jul-08 vishay siliconix code marking | |
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Contextual Info: Si1902DL New Product Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V "0.70 0.630 @ VGS = 2.5 V "0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability |
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Si1902DL OT-363 SC-70 S-99185--Rev. 01-Nov-99 | |
Si1900DLContextual Info: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability |
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Si1900DL OT-363 SC-70 S-02367--Rev. 23-Oct-00 | |
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Contextual Info: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability |
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Si1901DL OT-363 SC-70 08-Apr-05 | |
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Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PA XX YY S1 Lot Traceability and Date Code |
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Si1902DL OT-363 SC-70 S-03969--Rev. 28-May-01 | |
71080
Abstract: Si1902DL
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Si1902DL OT-363 SC-70 S-20880--Rev. 10-Jun-02 71080 | |
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Contextual Info: Si1900DL New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability |
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Si1900DL OT-363 SC-70 S-01458--Rev. 10-Jul-00 | |
Si1900DLContextual Info: Si1900DL Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.480 @ VGS = 10 V 0.63 0.700 @ VGS = 4.5 V 0.52 SOT-363 SC-70 (6-LEADS) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PB XX YY S1 Lot Traceability and Date Code |
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Si1900DL OT-363 SC-70 S-21374--Rev. 12-Aug-02 | |
71080
Abstract: Si1902DL SOT-363 Si1902DL
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Si1902DL OT-363 SC-70 S-02367--Rev. 23-Oct-00 71080 Si1902DL SOT-363 | |
Si1906DLContextual Info: Si1906DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PC XX YY S1 Lot Traceability and Date Code |
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Si1906DL OT-363 SC-70 18-Jul-08 | |
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Contextual Info: Si1906DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PC XX YY S1 Lot Traceability and Date Code |
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Si1906DL OT-363 SC-70 08-Apr-05 | |
Si1906DLContextual Info: Si1906DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PC XX YY S1 Lot Traceability and Date Code |
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Si1906DL OT-363 SC-70 S-01885--Rev. 28-Aug-00 | |
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CSH210Contextual Info: CSH210 ? TX-RX and diversity switch for mobile communications ? GaAs PHEMT Technology ? Low Insertion Loss ? No Supply Voltage Needed ? Positive Control Voltage ? SOT363 Package 2mm x 2mm ESD: Electrostatic discharge sensitive device Observe handling Precautions! |
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CSH210 OT363 Q62705K OT363 30dbm CSH210 | |
MARKING CODE pabContextual Info: NEW PRODUCT DMP2004DWK DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • Dual P-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage VGS TH <1V Low Input Capacitance Fast Switching Speed Low Input/Output Leakage |
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DMP2004DWK AEC-Q101 OT-363 DS30940 MARKING CODE pab | |
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Contextual Info: DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS RDS(ON) 60V 6Ω @ VGS = 5V 5Ω @ VGS = 10V Features and Benefits ID TA = +25°C 90mA 115mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching |
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DMN66D0LDW OT363 AEC-Q101 DS31232 | |
CSH210Contextual Info: CSH210 • TX-RX and diversity switch for mobile communications • GaAs PHEMT Technology • Low Insertion Loss • No Supply Voltage Needed • Positive Control Voltage • SOT363 Package 2mm x 2mm ESD: Electrostatic discharge sensitive device Observe handling Precautions! |
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CSH210 OT363 Q62705K OT363 30dbm CSH210 | |
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Contextual Info: NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET |
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NX3020NAKS OT363 SC-88) | |
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Contextual Info: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID TA = +25°C 170mA 200mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching |
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2N7002DWA OT363 AEC-Q101 DS36120 | |
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Contextual Info: 2N7002DWA Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V 6Ω @ VGS = 10V SOT363 • • • • • • • • • • ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the |
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2N7002DWA OT363 170mA 200mA AEC-Q101 DS36120 | |
Dual N-Channel mosfet sot-363
Abstract: marking code k7k DMN601DWK DMN601DWK-7 marking code k7k transistor
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DMN601DWK OT-363 DMN601DWK-7 3000/Tape com/datasheets/ap02007 DS30656 Dual N-Channel mosfet sot-363 marking code k7k DMN601DWK DMN601DWK-7 marking code k7k transistor | |
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Contextual Info: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching |
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2N7002DWA OT363 170mA 200mA AEC-Q101 DS36120 | |
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Contextual Info: 2N7002DWA DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V ID TA = +25°C 170mA 200mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching |
Original |
2N7002DWA OT363 AEC-Q101 DS36120 | |