MARKING S132 Search Results
MARKING S132 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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MG80C186-10/BZA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) |
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54ACT244/B2A |
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54ACT244/B2A - Dual marked (5962-8776001B2A) |
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ICM7555MTV/883 |
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ICM7555MTV/883 - Dual marked (5962-8950303GA) |
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MQ80186-8/BYC |
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80186 - Microprocessor, 16-Bit - Dual marked (8501001YC) |
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MARKING S132 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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marking BSs sot-23
Abstract: Q67000-S132 E6327 marking BSs SOT23 MARKING SBs
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OT-23 Q67000-S132 E6327 Sep-13-1996 marking BSs sot-23 Q67000-S132 E6327 marking BSs SOT23 MARKING SBs | |
Contextual Info: BSS 145 Infineon t«ehno!ogi6* SIPMOS Small-Signal Transistor • N channel s \A • Enhancement mode 2 • ^GS th = 1 4 -2-3 V 1 Pin 1 Pin 2 Vbs BSS 145 65 V Type BSS 145 Ordering Code Q67000-S132 0.22 A Pin 3 S G Type VPS05557 flDS(on) Package Marking |
OCR Scan |
Q67000-S132 VPS05557 OT-23 E6327 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 | |
SOT23 MARKING SBs
Abstract: VPS05557 marking SBs BSS145 SD marking BSs sot23 siemens
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OCR Scan |
VPS05557 OT-23 Q67000-S132 E6327 BSS145 OT-23 GPS05557 SOT23 MARKING SBs VPS05557 marking SBs BSS145 SD marking BSs sot23 siemens | |
E6327
Abstract: Q67000-S132 0051A marking BSs
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OT-23 Q67000-S132 E6327 E6327 Q67000-S132 0051A marking BSs | |
TZP27B
Abstract: TZP33A tzp 33a zp 33a TZP10A zener 1n 4148 957B R 958B zener 56c marking CODE S139
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OCR Scan |
DO-35 1SS41 DO-34 1S2471 1SS131 B100A TZP27B TZP33A tzp 33a zp 33a TZP10A zener 1n 4148 957B R 958B zener 56c marking CODE S139 | |
Contextual Info: PRELIMINARY M IC R O N I 1 MEG ¿R.IlCONDlA'IUH NO SRAM MODULE MT8LS132 X 32 SRAM MODULE 1 MEG X 32 SRAM 3.3VWITHOUTPUT ENABLE • • • • • • OPTIONS MARKING • Timing 15ns access 20ns access 25ns access 35ns access -15 -20 -25 -35 • Packages 72-pin SIMM |
OCR Scan |
72-Pin 72-pin MT8LS132 0010S | |
Contextual Info: 131.8MHz SAW Filter 4.4MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. S13202 Part Number: LB LBS13202 www.sipatsaw.com Features � For IF SAW filter � High attenuation � Single-ended operation � |
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LBS13202 2002/95/EC) | |
Burr Brown part marking
Abstract: low noise 650nm laser diode ld 650NM photodiode photodiode amplifier 25CC OPT201 OPT201KP QPT201 REGULATOR IC 377 PLASTIC PACKAGE Burr-Brown IC appendix c
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OCR Scan |
1-8O0-548-S132 400nA p00255m OPT201 4-20mA 17313b5 00E5515 Burr Brown part marking low noise 650nm laser diode ld 650NM photodiode photodiode amplifier 25CC OPT201 OPT201KP QPT201 REGULATOR IC 377 PLASTIC PACKAGE Burr-Brown IC appendix c | |
Contextual Info: SiP32101 www.vishay.com Vishay Siliconix 6.5 m, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 bidirectional switch features reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 m typ at 3.3 V on-resistance |
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SiP32101 12-Bump, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiP32101, SiP32102 www.vishay.com Vishay Siliconix 6.5 mΩ, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 and SiP32102 bidirectional switches feature reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 mΩ |
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SiP32101 SiP32102 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiP32101, SiP32102 www.vishay.com Vishay Siliconix 6.5 mΩ, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 and SiP32102 bidirectional switches feature reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 mΩ |
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SiP32101 SiP32102 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: SiP32101, SiP32102 www.vishay.com Vishay Siliconix 6.5 mΩ, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 and SiP32102 bidirectional switches feature reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 mΩ |
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SiP32101 SiP32102 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiP32101 www.vishay.com Vishay Siliconix 6.5 m, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101 bidirectional switch features reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low 6.5 m typ at 3.3 V on-resistance |
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SiP32101 12-Bump, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiP32101, SiP32102, SiP32103 www.vishay.com Vishay Siliconix 6.5 mΩ, Bi-Directional Battery Switch in Compact WCSP DESCRIPTION FEATURES The SiP32101, SiP32102, and SiP32103 bidirectional switches feature reverse blocking capability to isolate the battery from the system. The internal switch has an ultra-low |
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SiP32101 SiP32102 SiP32103 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: Si5446DU www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a RDS(on) () MAX. 30 0.0064 at VGS = 10 V 25 0.0070 at VGS = 6 V 25 0.0085 at VGS = 4.5 V 25 • TrenchFET Power MOSFET • Thermally enhanced PowerPAK® |
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Si5446DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQ2318AES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested |
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SQ2318AES AEC-Q101 OT-23 O-236) SQ2318AES-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
tokin d-03c
Abstract: M-521CT SBS9080-509T M-542CT SSB050 ST-110BH D-03C1 SS11V-R M-522CT SBT-0260
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SBT-03 SBT-01 D-03C, 08C2A D-16C, D-37C, 40C-47C D-55C, SZ-03 ST-101, tokin d-03c M-521CT SBS9080-509T M-542CT SSB050 ST-110BH D-03C1 SS11V-R M-522CT SBT-0260 | |
Contextual Info: Si5446DU www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A) a RDS(on) () MAX. 30 0.0064 at VGS = 10 V 25 0.0070 at VGS = 6 V 25 0.0085 at VGS = 4.5 V 25 • TrenchFET Power MOSFET • Thermally enhanced PowerPAK® |
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Si5446DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si5442DU Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package |
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Si5442DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si5442DU Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package |
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Si5442DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si5442DU Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. (A)a ID 0.0100 at VGS = 4.5 V 25 0.0115 at VGS = 2.5 V 25 0.0135 at VGS = 1.8 V 25 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK® ChipFET® Package |
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Si5442DU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SQ2318AES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested |
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SQ2318AES AEC-Q101 OT-23 O-236) SQ2318AES-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: SiA936EDJ www.vishay.com Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () MAX. ID (A) 0.034 at VGS = 4.5 V 4.5a 0.037 at VGS = 3.7 V 4.5a 0.045 at VGS = 2.5 V 4.5a • TrenchFET Power MOSFET • Thermally enhanced PowerPAK® SC-70 package |
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SiA936EDJ SC-70 SC-70-6L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Si2323CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.039 at VGS = -4.5 V -6e 0.050 at VGS = -2.5 V -5.8 0.063 at VGS = -1.8 V -5.1 VDS (V) -20 Qg (Typ.) 9 nC APPLICATIONS • Load Switch • PA Switch |
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Si2323CDS O-236 OT-23) Si2323CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A |