MARKING SSN Search Results

Contextual Info: Aluminum Electrolytic Capacitors SSN Features ‧ 85℃, 1,000 hours assured, bi-polarized series with 5mm height ‧ Suitable for use in circuits wihich has a reversed or unknown polarity ‧ RoHS Compliance Sleeve & Marking Color: Yellow & Black SECIFICATIONS

SSN2N7002A

Contextual Info: SSN2N7002A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-323 RDS(ON) ( ) Max D 3 @VGS = 10V G 4 @VGS = 5V S D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-323 package. Marking Code S 2A

NTC 1K lm 102

Contextual Info: A COMPANY OF MODEL SSN “SOFT-START” NTC Therm istors Prelim inary For Inrush C u rre n t Suppressing D evices 1.5 A to 2 5 A a t 6 5 C FEATURES • Switching power supply applications • Special marking is available upon request • Protective silicone coating is standard and has a nominal thickness of

SSN SOT-23

Abstract: sot-23 ssn L6327 SN7002N PG-SOT-23
Contextual Info: SN7002N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.2 A PG-SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Tape and Reel Information Marking

Contextual Info: SN7002N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.2 A PG-SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Tape and Reel Information Marking

Contextual Info: A C O M PAN Y O F M O DEL SSN “S O F T -S T A R T ” N TC T h e rm is to rs P re lim in a ry For Inrush Current Suppressing Devices 1.5 A to 25 A a t 65 C FE A T U R E S • Switching power supply applications • Special marking is available upon request

MARKING QG 6 PIN

Abstract: L6327 SN7002W
Contextual Info: SN7002W SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.23 A PG-SOT-323 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Yes Tape and Reel Information Marking

Contextual Info: SN7002W SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.23 A PG-SOT-323 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Yes Tape and Reel Information Marking

SIPMOS Small-Signal-Transistor

Abstract: IS-023A SN7002W PG-SOT323 JESD22-A114-HBM PG-SOT-323 L6327 Marking 023A SN7002W L6433 SIPMOS N-channel Small-Signal-Transistor
Contextual Info: SN7002W SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.23 A PG-SOT-323 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Yes Tape and Reel Information Marking

51R0

Abstract: MIL-R-83401 MO-137 MS-001 MS-013 SQS24
Contextual Info: MODELS SQSxxA1, SQSxxB, SSNxxA, SSNxxB, SSWxxA, SSWxxB, SPDxxA, SPDxxB Isolated and bussed circuits Thin film resistor network RoHS compliant available FEATURES Precision Nichrome Resistors on Silicon Passivation coating provides protection in humid environments

Contextual Info: MODELS SQSxx SQSxxA xxA1, SQSxx SQSxxB, xxB, SSNxx SSNxxA, xxA, SSNxx SSNxxB, xxB, SSWxx SSWxxA, xxA, SSWxx SSWxxB, xxB, SPDxx SPDxxA, xxA, SPDxx SPDxxB xxB Isolated and bussed circuits Thin film resistor network RoHS compliant available FEATURES Precision Nichrome Resistors on Silicon

Contextual Info: Nichrome Resistor Networks on Silicon Substrates S Series: SQSxxA1, SQSxxB, SSNxxA, SSNxxB, SSWxxA, SSWxxB, SPDxxA, SPDxxB Isolated and bussed circuits Thin film resistor network RoHS compliant Not Recommended for New Designs For alternative see SQS - ,

SSNX

Contextual Info: Nichrome Resistor Networks on Silicon Substrates S Series: SQSxxA1, SQSxxB, SSNxxA, SSNxxB, SSWxxA, SSWxxB, SPDxxA, SPDxxB Isolated and bussed circuits Thin film resistor network RoHS compliant Features Precision Nichrome Resistors on Silicon Passivation coating provides protection in humid environments

SSN3906

Abstract: marking KA marking pc sot-23 transistor SSN3904 marking 02 npn "Small Signal Amplifier"
Contextual Info: SSN3904 TECHNICAL DATA NPN Silicon Transistor 1. Descriptions ・General small signal amplifier ・Switching application 2. Features •Low collector saturation voltage VCE sat = Max. 0.4V ·Low output capacitance Cob= Typ. 4pF ·Complementary to the SSN3906

Contextual Info: 1/24/2011 No content banned per EU RoHS. Average mass of SSN16LF thin film network is 0.15 grams each. Prepared by Eric Arnold 714 447-2565 Weights above 1 milligram rounded to the nearest mg. Values less than 1 milligram given in scientific notation. SSN16LF BOM-style material declaration. BI Technologies Corporation

Contextual Info: SSN3139K -0.66 A, -20 V, RDS ON 520 mΩ Ω P Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-723 Low on-resistance Fast switching speed Drive circuits can be simple

Contextual Info: SSN3134K 0.75 A, 20 V, RDS ON 380 mΩ Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-723 Low on-resistance Fast switching speed Drive circuits can be simple

Contextual Info: Nichrome Resistor Networks on Silicon Substrates Models SQSxxL, SSNxxL, SSWxxL. Ladder Circuit Thin Film Resistor Networks RoHS Complaint Jedec 95 Industry standard packaging Schematics R/2R Ladder Network 16 Pin 20 Pin 16 9 R R R R R 1 R 20 11 R R 8 R R R

Contextual Info: Nichrome Resistor Networks on Silicon Substrates Models SQSxxL, SSNxxL, SSWxxL. Ladder Circuit Thin Film Resistor Networks RoHS Complaint Jedec 95 Industry standard packaging Not Recommended for New Designs Schematics R/2R Ladder Network 16 Pin 16 R R R R

Contextual Info: Nichrome Resistor Networks on Silicon Substrates Models SQSxxL, SSNxxL, SSWxxL. Ladder Circuit Thin Film Resistor Networks RoHS Complaint Jedec 95 Industry standard packaging Schematics R/2R Ladder Network 16 Pin 16 R R R R 9 R 1 R 20 Pin 20 R R 8 R R R 1

1N45B

Abstract: SSN1N45BTA SSN1N45B
Contextual Info: SSN1N45B SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

1N45B

Contextual Info: SSN1N45B N-Channel B-FET 450 V, 0.5 A, 4.25 Ω Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

SSN3043

Abstract: MosFET
Contextual Info: SSN3043 255mA , 20V , RDS ON 3.4Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-723 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for

AD3A

Contextual Info: SSN2302A N-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-323 RDS(ON) (mħ) Max ID (A) D 3A YW 85 @VGS = 4.5V 20V 2.8A G 115 @VGS = 2.5V S D FEATURES ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable. G ȟ!SOT-323 package.