MARKING SYMBOL DP Search Results

Contextual Info: FJD5553 NPN Silicon Transistor High Voltage Switch Mode Application • • • Fast Speed Switching Wide Safe Operating Area Suitable for ElectronicBallast Application DPAK Marking : J5553 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol

electronic ballast with npn transistor

Contextual Info: FJD5553 NPN Silicon Transistor High Voltage Switch Mode Application • Fast Speed Switching • Wide Safe Operating Area • Suitable for Electronic Ballast Application DPAK Marking : J5553 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings * Symbol

marking code vishay SILICONIX

Abstract: 45N05-20L SQD45N05-20L vishay siliconix code marking siliconix marking code TO252-DPAK SUD45N05-20L VISHAY MARKING CODE 45n05 Marking information
Contextual Info: Part Marking Information Vishay Siliconix DEVICES: REVERSE TO-252 DPAK Reverse TO-252 (Q)45N0520L TYWFLL Example Part Numbers In Red Type Q = Automotive, for example for SQD45N05-20L. No character otherwise, for example for SUD45N05-20L = ESD Symbol = Lot Code

DIODE Ifavm 30 A

Abstract: 8P030AS 8P030
Contextual Info: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery Preliminary Data VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Cathode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings

Contextual Info: GOWANDA Inductance Tolerance Date Code Year/Week Lot Symbol Ø.152 / .172 [3.86 / 4.37] Ø.023 / .027 [.58 / .69] .390 / .430 [9.91 / 10.92] Tape and Reel Specs: Pcs./12in reel maximum: Pitch between parts: Inside tape spacing: Class: Notes: - Marking: Laser mark

Contextual Info: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Cathode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings IFRMS IFAVM ①

Contextual Info: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V trr = 20 ns with soft recovery Preliminary Data VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA DPAK Cathode 6P060AS Cathode (Flange) Anode Symbol Conditions IFRMS IFAVM ¬

6P060AS

Abstract: 6p060
Contextual Info: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V trr = 20 ns with soft recovery Preliminary Data VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA DPAK Cathode 6P060AS Anode Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM

Advantages of IEC

Contextual Info: DSS 2-100AB Advanced Technical Information IFAV = 2 A VRRM = 100 V VF = 0.59 V Power Schottky Rectifier VRSM VRRM V V 100 100 Type Marking C A SMB DO-214 AA on product DSS 2-100AB A X2KAB C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5

x1ka Marking

Abstract: DO-214 Marking x1ka cr marking DO-214 diode DO-214 AC
Contextual Info: DSS 1-100AA Advanced Technical Information IFAV = 1 A VRRM = 100 V VF = 0.6 V Power Schottky Rectifier VRSM VRRM V V 100 100 Type Marking C A SMA DO-214 AC on product A DSS 1-100AA X1KA C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5

DO-214 diode

Abstract: DO-214 Marking
Contextual Info: DSS 1-60BA Advanced Technical Information IFAV = 1 A VRRM = 60 V VF = 0.4 V Power Schottky Rectifier VRSM VRRM V V 60 60 Type Marking C A SMA DO-214 AC on product A DSS 1-60BA X1GB C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5

Contextual Info: DSS 1-40BA Advanced Technical Information IFAV = 1 A VRRM = 40 V VF = 0.34 V Power Schottky Rectifier VRSM VRRM V V 40 40 Type Marking C A SMA DO-214 AC on product A DSS 1-40BA X1EB C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5

marking aa diode

Contextual Info: DSS 2-60BB Advanced Technical Information IFAV = 2 A VRRM = 60 V VF = 0.4 V Power Schottky Rectifier VRSM VRRM V V 60 60 Type Marking C A SMB DO-214 AA on product DSS 2-60BB A X2GBB C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5

DO-214 Marking

Abstract: diode DO214 marking aa diode DO-214 diode
Contextual Info: DSS 2-40BB Advanced Technical Information IFAV = 2 A VRRM = 40 V VF = 0.33 V Power Schottky Rectifier VRSM VRRM V V 40 40 Type Marking C A SMB DO-214 AA on product DSS 2-40BB A X2EBB C Symbol Conditions Maximum Ratings IFAV IFAVM TL = 125°C; rectangular, d = 0.5

P35 marking code transistor

Abstract: Marking P35 sot89 transistor p35 DPLS350Y p35 marking
Contextual Info: DPLS350Y LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)

mosfet marking code c0

Abstract: TSM4NB65
Contextual Info: TSM4NB65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω)(max) ID (A) 650 3.37 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

DPG10I300PA

Contextual Info: DPG 10 IM 300 UC advanced V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 3 2 Marking on Product: PAOGUI Backside: cathode Features / Advantages:

DNBT8105

Abstract: DNBT8105-7 DPBT8105
Contextual Info: DNBT8105 Lead-free Green 1A NPN SURFACE MOUNT TRANSISTOR Features • · · · · · · Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching High Collector Current Rating SOT-23 A Complementary Version Available DPBT8105 C Lead Free By Design/RoHS Compliant (Note 2)

DPF60IM400HB

Contextual Info: DPF 60 IM 400 HB tentative V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 400 V 60 A 60 ns 3 DPF 60 IM 400 HB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips

TSM4NB60CP

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

P35 marking code transistor

Abstract: DPLS350E
Contextual Info: DPLS350E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1)

DS30514

Abstract: DNBT8105 DPBT8105
Contextual Info: DPBT8105 Lead-free Green NEW PRODUCT 1A PNP SURFACE MOUNT TRANSISTOR Features • · · · · · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Collector Current Rating SOT-23 Complementary Version Available DNBT8105

DNBT8105

Abstract: DPBT8105 DS30514
Contextual Info: SPICE MODEL: DPBT8105 DPBT8105 Lead-free Green NEW PRODUCT 1A PNP SURFACE MOUNT TRANSISTOR Features • · · · · · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Collector Current Rating SOT-23 Complementary Version Available DNBT8105

transistor k81

Abstract: k81 SOT23 SOT-23 Marking K81 DNBT8105 DNBT8105-7 DPBT8105
Contextual Info: SPICE MODEL: DNBT8105 DNBT8105 Lead-free Green 1A NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · · · · Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching High Collector Current Rating SOT-23 A Complementary Version Available DPBT8105