MARKING T01 SOT Search Results

Contextual Info: PPJT7801 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V SOT-363 -0.7A Current Unit: inch mm Features  RDS(ON) , VGS@-4.5V, ID@-0.7A<325mΩ  RDS(ON) , VGS@-2.5V, ID@-0.6A<420mΩ  RDS(ON) , VGS@-1.8V, ID@-0.5A<600mΩ  Advanced Trench Process Technology

Contextual Info: PPJT7801 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V SOT-363 -0.7A Current Unit: inch mm Features  RDS(ON) , VGS@-4.5V, ID@-0.7A<325mΩ  RDS(ON) , VGS@-2.5V, ID@-0.6A<420mΩ  RDS(ON) , VGS@-1.8V, ID@-0.5A<600mΩ  Advanced Trench Process Technology

Electrovalve

Abstract: T0103-XXXN c044a T0105-XXXA AC sot-223 IBGT T10SN 2t sot marking t01
Contextual Info: T01 1A TRIACs Series 3-Quardrant Triacs Main features Symbol Value Unit IT RMS 1 A VDRM/VRRM 600 and 700 V I GT(Q1) 3 to 25 mA B B B B B DESCRIPTION The T01 series is suitable for general purpose AC switching applications such as home appliances(electrovalve, pump, door lock, small lamp control),fan speed

L74VHC1GT01

Abstract: sc59 Marking T01 marking code 10 sot23 sot23-5 transistor T1 A114 A115 C101 JESD22
Contextual Info: LESHAN RADIO COMPANY, LTD. 2–Input NAND Gate with Open Drain Output with LSTTL–Compatible Inputs L74VHC1GT01 The L74VHC1GT01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.

Contextual Info: Datasheet P-Channel Enhancement Mode MOSFET Features z TDM2301 Pin Description -20V/-3A , RDS ON =72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V z Super High Dense Cell Design z Reliable and Rugged z Lead Free Available (RoHS Compliant) Top View of SOT23-3L

Contextual Info: Datasheet P-Channel Enhancement Mode MOSFET Features z TDM2305 Pin Description -20V/-3.5A , RDS ON =60mΩ(typ.) @ VGS =-4.5V RDS(ON) =70mΩ(typ.) @ VGS =-2.5V R =83mΩ(typ.) @ V DS(ON) z GS =-1.8V Super High Dense Cell Design Top View of SOT23-3L z Reliable and Rugged

A194FH

Abstract: AOZ8000CI 84-3j mp8000ch4 A194-FH 2P3M a194 IEC-61000-4-2 SS MARKING sot23 MP-8000CH4
Contextual Info: AOS Semiconductor Product Reliability Report AOZ8000CI, rev 2 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Mar 27, 2007 1 This AOS product reliability report summarizes the qualification result for AOZ8000CI.

f585

Abstract: bfn21 62702-F585 transistor sl 431
Contextual Info: PNP Silicon High-Voltage Transistor • • • • • BFN 21 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-em itter saturation voltage Low capacitance Complementary type: BFN 20 NPN Type Marking

Contextual Info: Philips Semiconductors 3 31 0023545 075 bbS T Silicon n-channei dual gate MOS-FETs FE A T U R E S APX Product specification N ANER PHILIPS/DISCRETE L7E D BF901; BF901R Q U IC K R E F E R E N C E DATA • Intended for low voltage operation • Short channel transistor with high

nitto SWT 10

Abstract: nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04
Contextual Info: PRODUCT CODING SYSTEM QSP0005_WEB.028 1 2.4.2007 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document. ESD EWS ID MAS MBB T&R 2 Electrostatic Sensitive Device

Contextual Info: WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 30 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V

WT3401

Abstract: WT-3401
Contextual Info: WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS ON R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V *Rugged and Reliable

Contextual Info: WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS(ON) R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V

LT 450 mbr

Contextual Info: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30Hz and 15 kHz • Complementary types: BC 856 W, BC 857 W,

TMP100

Abstract: TMP101 SOT23-6 Marking TM H4 MARKING CODE SOT23-6 marking l5 SOT23-6 marking CODE D3 SOT23-6 sbos231b 1001011
Contextual Info: TMP100 TMP101 SBOS231B – JANUARY 2002 – REVISED MAY 2002 Digital Temperature Sensor with I2C Interface FEATURES DESCRIPTION ● DIGITAL OUTPUT: I2C Serial 2-Wire ● RESOLUTION: 9- to 12-Bits, User-Selectable ● ACCURACY: ±2.0°C from –25°C to +85°C max

D78P058F

Contextual Info: DATA SHEET NEC M O S INTEGRATED CIRCUI 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The |iP D 7 8 P 0 5 8 F is an Electro Magnetic Interface EM I noise reduction version in comparison with the usual jiP D 7 8 P 0 5 8 . The mP D 78P 05 8 F is a member of the /xPD78058F subseries of 78K/0 se rie s products, in which the on-chip m ask

sot23 MARKING CODE L6

Abstract: marking code D3 SOT23-6
Contextual Info: TMP100 TMP101 SBOS231A – APRIL 2002 Digital Temperature Sensor with I2C Interface FEATURES DESCRIPTION ● DIGITAL OUTPUT: I2C Serial 2-Wire ● RESOLUTION: 9- to 12-Bits, User-Selectable ● ACCURACY: ±2.0°C from –25°C to +85°C max ±3.0°C from –55°C to +125°C (max)

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Transistor TT 2246

Contextual Info: W hp% m LUM H E W L E TT PA CKA RD 1 .5 -1 8 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low M inim um N oise Figure: I dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • A sso ciated Gain: 9.4 dB Typical at 12 GHz

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

271 Ceramic Disc Capacitors

Abstract: 1501 Dc to Dc converter LM7131 marking MOSA 470 pf ceramic capacitor 100w audio amplifier schematic A02B GI MARKING GI sot23-3 5pin marking VJ LM7131ACM
Contextual Info: LM7131 National Semiconductor LM7131 Tiny High Speed Single Supply Operational Amplifier General Description Features The LM7131 is a high speed bipolar operational amplifier available in a tiny SOT23-5 package. This makes the LM7131 ideal for space and weight critical designs. Single

IC1232

Abstract: c4742 c1813 C4722 MC2212 C1B25 C2792 C-829 capacitor c829 capacitor 1C9
Contextual Info: KEMET CERAMIC CHIP/STANDARD FEATURES • • • • • Twelve chip sizes COG NPO , X7R, Z5U and Y5V Dielectrics 10, 16, 25, 50, 100 and 200 Volts Standard End Metalization-tin-plated nickel barrier Available Capacitance Tolerance: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1 %; ±2%; ±3%; ±5%; ±10%;