MARKING TD MOSFET Search Results

Contextual Info: TC7320 Six Pair, N- and P-Channel, Enhancement-Mode MOSFET Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC7320FG consists of a six pairs of high voltage, low threshold, N- and P-channel MOSFETs in a 32-lead LQFP package. All of the MOSFETs have integrated gate-to-source

Diode marking MF

Contextual Info: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 rDS(on) (W) ID (A) 0.625 @ VIN = 4.5 V "0.43 0.890 @ VIN = 2.5 V "0.36 1.25 @ VIN = 1.8 V "0.3 D D D D D D TrenchFETr Power MOSFET Pb-free 1.8 to 8-V Input Available

L2SK3018WT1G

Abstract: l2sk3018
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET 100 mA, 30 V L2SK3018WT1G S-L2SK3018WT1G • Features 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits.

Contextual Info: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC7320FG consists of a six pairs of high voltage, low threshold, N- and P-channel MOSFETs in a 32-lead LQFP package. All of the MOSFETs have integrated gate-to-source

Contextual Info: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC7320 consists of a six pairs of high voltage, low threshold, N- and P-channel MOSFETs in a 32-lead LQFP package. All of the MOSFETs have integrated gate-to-source

Contextual Info: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description Six N- and P-channel MOSFET pairs Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold Low on-resistance Low input capacitance Fast switching speeds

DP627

Abstract: C1222 logic pulser MS-026 lqfp 80 zener diode si 18 125OC MS-026 TC7320 TC7320FG TC7320FG-G
Contextual Info: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC7320 consists of a six pairs of high voltage, low threshold, N- and P-channel MOSFETs in a 32-lead LQFP package. All of the MOSFETs have integrated gate-to-source resistors and

marking KN sc70

Abstract: L2SK3018WT1G Diode marking CODE 5M DIODE MARKING code 05M
Contextual Info: LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET 100 mA, 30 V L2SK3018WT1G 3 • Features 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel.

DP2 marking

Contextual Info: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC7320 consists of a six pairs of high voltage, low threshold, N- and P-channel MOSFETs in a 32-lead LQFP package. All of the MOSFETs have integrated gate-to-source

Mosfet

Abstract: SSF2637E
Contextual Info: SSF2637E 20V P-Channel MOSFET DESCRIPTION The SSF2637E uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as -0.5V. GENERAL FEATURES ● VDS = -20V,ID =-5.4A RDS(ON) < 52mΩ @ VGS=-2.5V RDS(ON) < 43mΩ @ VGS=-4.5V

Mosfet

Abstract: SSF3626
Contextual Info: SSF3626 30V Dual N-Channel MOSFET DESCRIPTION The SSF3626 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID =6.9A

Mosfet

Abstract: SSF2814E
Contextual Info: SSF2814E 20V Dual N-Channel MOSFET DESCRIPTION The SSF2814E uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V

Mosfet

Abstract: SSF2429
Contextual Info: SSF2429 20V P-Channel MOSFET DESCRIPTION D The SSF2429 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. G GENERAL FEATURES S ● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V

Si1040X

Abstract: Si1040X-T1
Contextual Info: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 rDS(on) (W) ID (A) 0.625 @ VIN = 4.5 V "0.43 0.890 @ VIN = 2.5 V "0.36 1.25 @ VIN = 1.8 V "0.3 D D D D D D TrenchFETr Power MOSFET Pb-free 1.8 to 8-V Input Available

Mosfet

Abstract: SSF2300B
Contextual Info: SSF2300B 20V N-Channel MOSFET DESCRIPTION D The SSF2300B uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching

Mosfet

Abstract: SSF3605S
Contextual Info: SSF3605S 30V P-Channel MOSFET D DESCRIPTION The SSF3605S uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic Diagram GENERAL FEATURES ● VDS =-30V,ID =-15A

Mosfet

Abstract: SSF2641S
Contextual Info: SSF2641S 20V P-Channel MOSFET D DESCRIPTION The SSF2641S uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings. G S Schematic Diagram

Mosfet

Abstract: SSF32E0E
Contextual Info: SSF32E0E 30V N-Channel MOSFET GENERAL FEATURES ● VDS =30V,ID = 0.1A RDS ON < 8Ω @ VGS=4V RDS(ON) < 13Ω @ VGS=2.5V ESD Rating：1000V HBM ● High Power and current handing capability ● Lead free product ● Surface Mount Package Schematic Diagram APPLICATIONS

Mosfet

Abstract: SSF2439E
Contextual Info: SSF2439E 20V P-Channel MOSFET DESCRIPTION The SSF2439E uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = -20V,ID =-4.5A RDS(ON) < 180mΩ @ VGS=-2V RDS(ON) < 100mΩ @ VGS=-2.5V

Mosfet

Abstract: SSF2816EBK
Contextual Info: SSF2816EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V

Mosfet

Abstract: SSF2312
Contextual Info: SSF2312 20V N-Channel MOSFET D DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching

Mosfet

Abstract: SSF2418EBK
Contextual Info: SSF2418EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected.

Mosfet

Abstract: SSF2336
Contextual Info: SSF2336 20V N-Channel MOSFET D DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching

Mosfet

Abstract: SSF3402
Contextual Info: SSF3402 30V N-Channel MOSFET D DESCRIPTION The SSF3402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON) < 30mΩ @ VGS=10V