MARKING TE SOT363 Search Results

SOT-363 marking 05

Abstract: BAT754L diode smd marking LE
Contextual Info: Diodes SMD Type Schottky Barrier Triple Diode BAT754L SOT-363 Unit: mm 0.525 +0.1 1.3-0.1 0.65 +0.15 2.3-0.15 +0.1 1.25-0.1 Features Very low forward voltage 0.36 Guard ring protected +0.05 0.1-0.02 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 Low diode capacitance +0.05

Contextual Info: Product specification BAT754L SOT-363 Unit: mm 0.525 +0.1 1.3-0.1 0.65 +0.15 2.3-0.15 +0.1 1.25-0.1 Features Very low forward voltage 0.36 Guard ring protected +0.05 0.95-0.05 Three independent diodes in a small plastic SMD package. +0.05 0.1-0.02 0.1max +0.1

1N5819 SOD-323

Contextual Info: APPROVE SHEET Customer: Customer Part Number: 1N5817~1N5819 PanJit Part Number: 1N5817~1N5819 Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.11.2005 DATE: APR.11.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129

marking 1A7 SOT-23

Abstract: 1a7 sot-23 96x80 SOD123 S32 mark 3p SOT363
Contextual Info: APPROVE SHEET Customer: Customer Part Number: 1A1~1A7 PanJit Part Number: 1A1~1A7 Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.11.2005 DATE: APR.11.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129 NO. 24 , Kang Shan North Rd., Kang Shan Town ,

Contextual Info: APPROVE SHEET Customer: Customer Part Number: BY127M~EM513 PanJit Part Number: BY127M~EM513 Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.12.2005 DATE: APR.12.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129

Contextual Info: APPROVE SHEET Customer: Customer Part Number: 1N5334B~1N5378B PanJit Part Number: 1N5334B~1N5378B Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.12.2005 DATE: APR.12.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129

Contextual Info: BAS116TW/BAW156DW/BAV170DW/BAV199S SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES VOLTAGE 100 Volts 200mWatts POWER FEATURES • Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2nA typical at VR=75V. • Low capacitance. 2pF max at VR=0V, f=1MHz

diode smd marking SD

Abstract: SMD kl7 QW-BA015 smd schottky diode sot363 marking KLB smd marking rl SMD PI SMD 24 oe G marking CDBV6-54AD-G
Contextual Info: c o A tc m r SMD Schottky Barrier Diode Arrays S M D D io d e s S p e c ia lis t CDBV6-54T/AD/CD/SD/BR-G Forward Current: 0.2A Reverse Voltage: 30V RoHS Device Features SOT-363 - L o w f o r w a r d v o l t a g e d ro p. -Fast switching. -Ultra-small surface mount package.

Contextual Info: Product specification MBD110DWT1 MBD330DWT1;MBD770DWT1 SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 +0.15 2.3-0.15 Extremely Low Minority Carrier Lifetime +0.1 1.25-0.1 0.525 Features 0.36 Very Low Capacitance +0.05 0.1-0.02 +0.05 0.95-0.05 +0.1 0.3-0.1 +0.1 2.1-0.1

smd marking m4

Abstract: DIODE T4 marking smd diode M4 smd diode t4 DIODE H5 SMD smd diode marking T4 smd diode H5 T4 diode smd smd diode marking T1 H5 SMD
Contextual Info: Diodes SMD Type Dual Schottky Barrier Diodes MBD110DWT1 MBD330DWT1;MBD770DWT1 SOT-363 1.3 Unit: mm +0.1 -0.1 0.65 +0.15 2.3-0.15 Extremely Low Minority Carrier Lifetime +0.1 1.25-0.1 0.525 Features 0.36 Very Low Capacitance +0.05 0.1-0.02 +0.05 0.95-0.05 +0.1

1.5ke 390

Abstract: 33c marking sot-363 code marking ssi sot-23 VS388-2.5K
Contextual Info: APPROVE SHEET Customer: Customer Part Number: 1.5KE_SERIES PanJit Part Number: 1.5KE_SERIES Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.11.2005 DATE: APR.11.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129

Contextual Info: BC847CS/BC857CS GENERAL PURPOSE TRANSISTORS 45 Volts VOLTAGE POWER 150 mW FEATURES • General Purpose Amplifier Applications • Collector Current IC = -100mA • MECHANICAL DATA Case: SOT-363 Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.006 grams

KBP 2060

Contextual Info: APPROVE SHEET Customer: Customer Part Number: 1SMA4729 SERIES PanJit Part Number: 1SMA4729 SERIES Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Kaori Huang DATE: JUL.16.2005 DATE: JUL.16.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129

2n7002kdW

Contextual Info: 2N7002KDW 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS ON , VGS@10V, IDS@500mA=2Ω RDS(ON), VGS@4.5V, IDS@200mA=3Ω SOT-363 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns

Contextual Info: RB501V-40TW SURFACE MOUNT SCHOTTKY DIODES VOLTAGE CURRENT 45 Volts 100 mA MECHANICAL DATA • Case: SOT-363, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 6 5 4 1 2 3 • Apporx. Weight: 0.0002 ounce, 0.006 gram • Marking : 140 ABSOLUTE RATINGS

PJ4N

Abstract: PJ4N3KDW MARKING GA SOT-363 DM800
Contextual Info: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@2.5V,IDS@1mA=7.0Ω • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • The MOSFET elements are independent,eliminating interference

marking code 04 sot-363

Abstract: marking A SOT363 marking code st sot SOT 363 marking L HSMP-389L marking 06 Surface Mount SOT-363
Contextual Info: HEW LETT I & Ü PA CK A RD Surface Mount RF PIN Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMP-389L/T/U Features • D io d es O ptim ized for: Ultra-Low Distortion Switching Microwave Frequency Operation • Surface M ount SOT-363 (S C -70)P ack age

MARKING PW

Abstract: BAV99BRW sot363 XI
Contextual Info: BAV99BRW QUAD SURFACE MOUNT SWITCHING DIODE ARRAY FEATURES • Fast Switching Speed • Ultra-Small Surface Mount Package • For General Purpose Switching Applications • High Conductance • Easily Connected As Full-Wave Bridge • In compliance with EU RoHS 2002/95/EC directives

Contextual Info: TfiJH H E W L E T T WL'eM PA C K A R D Surface Mount RF PIN Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMP-386L HSMP 389L/R/T/U/V Features • Unique configurations in surface mount SOT-363 package - Add flexibility - Save board space - Reduce cost

Contextual Info: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance 0.010(0.25) • The MOSFET elements are independent,eliminating interference

PJ4N

Abstract: marking code ga sot 363 MARKING CODE LA sot363 sot-363 marking DS marking CODE GA sot363 ZE marking sot-363 SOT 363 marking CODE LA sot363 XI PJ4N3KDW
Contextual Info: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected SOT-363 FEATURES Unit：inch mm • RDS(ON), VGS@4.0V,IDS@10mA=5.0Ω • Advanced Trench Process Technology 0.087(2.20) 0.074(1.90) • High Density Cell Design For Ultra Low On-Resistance

sot363 XI

Contextual Info: BAV99BRW QUAD SURFACE MOUNT SWITCHING DIODE ARRAY SOT-363 Unit：inch mm • Fast Switching Speed • Ultra-Small Surface Mount Package 0.087(2.20) 0.074(1.90) • For General Purpose Switching Applications 0.010(0.25) 0.018(0.45) 0.006(0.15) FEATURES 0.087(2.20)

LT 816

Contextual Info: DISCRETE SEMICONDUCTORS PUMH4 NPN resistor-equipped double transistor Product specification Supersedes data of 1997 Dec 16 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 10 PHILIPS PHILIPS Philips Semiconductors Product specification

PJ4N

Contextual Info: PJ4N3KDW 30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@4.0V,IDS@10mA=5.0 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@2.5V,IDS@1mA=7.0 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.030(0.75) 0.021(0.55)