MARKING VA TRANSISTORS Search Results

Contextual Info: MC34271 Liquid Crystal Display and Backlight Integrated Controller 32 31 30 29 28 27 26 25 Sync RT Gnd VA Vref EN1 EN2 PIN CONNECTIONS AND MARKING DIAGRAM 1 DS1 DS2 24 2 Ref1 Ref2 23 3 FB1 FB2 22 4 Comp1 5 SS1 SS2 20 V1 V0 8 Drv1 V2 D2 18 V3 7 D1 V4 S2 19

MARKING CODE A06

Abstract: marking 1G SOT23 sot-23 MARKING CODE G1 AH A06 sot-23 body marking 1P NPN e30551 marking A06 A12 marking amplifier A55 marking sot-23 Marking G1
Contextual Info: FERRANTI * semiconductors FMMT-A05 FM MT-AO6 NPN Silicon Planar Medium Power Transistors D E S C R IP T IO N M e d iu m pow er transistors designed fo r sm all and medium am plification from d.c. to radio frequencies, in applica­ tio n s such as Audio Frequency Am plifiers, Drivers,

Contextual Info: BC847CPN DUAL GENERAL PURPOSE TRANSISTORS NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier appliactions. They are housed in the SOT-363 which is designed for low power surface mount applications. FEATURES • MECHANICAL DATA

Contextual Info: 32E D • Ö23b32ü 0017251 3 ■ SIP NPN Silicon Transistors SMBT 6428 SMBT 6429 17 SIEMENS/ SPCL-. SEMICONDS • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering code for

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1328 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1328 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)

2SD1328

Contextual Info: Transistors 2SD1328 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.95 (0.95) 1.9±0.1 (0.65) • Low collector-emitter saturation voltage VCE(sat)

Marking XA XB XC XD XE XF XH XI XJ XK XM

Abstract: marking YJ transistors YK NPN RN2608 - RN2908 QF npn Marking 47 marking YB YB MARKING ic marking YK kn marking
Contextual Info: 3. List of Principal Characteristics of Built-In Resistor Transistors BRT SSM 3. List of Principal Characteristics of Built-In Resistor Transistors (BRT) * 3.1 Sm ail Super M ini Typ e (SSM) Polarity Type No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 RN1107

marking SC-59 1D

Abstract: Transistor hFE CLASSIFICATION Marking CE forward converter hFE CLASSIFICATION Marking 24 hFE CLASSIFICATION Marking CE marking 25 SC-59 power 2SD1328
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1328 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95)

Contextual Info: Transistors with built-in Resistor UNR2225 Silicon NPN epitaxial planer type Unit: mm For muting circuit 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 0.95 (0.95) 1.9±0.1 (0.65) • Low collector to emitter saturation voltage VCE(sat) , optimum for the muting circuit

Contextual Info: Transistors with built-in Resistor UNR5225 Silicon NPN epitaxial planer type 0.425 Unit: mm For muting circuit 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Low collector to emitter saturation voltage VCE(sat) • Built-in resistor, allowing reduction of the number of parts.

Contextual Info: Transistors with built-in Resistor UNR5226 Silicon NPN epitaxial planer type 0.425 Unit: mm For muting circuit 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Low collector to emitter saturation voltage VCE(sat) • Built-in resistor, allowing reduction of the number of parts.

2sd1915F

Abstract: 2SD1915 vebo 25 XP4506
Contextual Info: Composite Transistors XP4506 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output ● 1 6 2 5 3 4 2SD1915F x 2 elements • Absolute Maximum Ratings Parameter Symbol Ratings Unit VCBO 50 V Collector to emitter voltage

2SD1328

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1328 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 2.8+0.2

2SD1328

Abstract: XN4504
Contextual Info: Composite Transistors XN4504 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 –0.3 +0.25 3 Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage Rating Emitter to base voltage

Contextual Info: Transistors with built-in Resistor UNR2226 Silicon NPN epitaxial planer type Unit: mm For muting circuit 0.40+0.10 –0.05 0.16+0.10 –0.06 • Absolute Maximum Ratings Ta = 25°C 1.9±0.1 Unit 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage

Contextual Info: Transistors with built-in Resistor UNR5227 Silicon NPN epitaxial planer type 0.425 Unit: mm For muting circuit 0.3+0.1 –0.0 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 • Low collector to emitter saturation voltage VCE(sat) • Built-in resistor, allowing reduction of the number of parts.

vebo 25

Abstract: 2SD1938 XP1504
Contextual Info: Composite Transistors XP1504 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For amplification of low frequency output 2.1±0.1 0.425 0.65 1 2 5 3 4 +0.05 0.9± 0.1 2SD1938 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02

vebo 25

Abstract: 2SD1938 XN1504
Contextual Info: Composite Transistors XN1504 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD1938 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element

BD 440 NPN transistors

Abstract: MARKING BL SOT89 sot89 marking BH BA SOT-89 transistor bd 370 on TRANSISTOR BC 187 transistor marking code HF SOT-89 marking BC Marking BA SOT89 BCX54,115
Contextual Info: Central BCX54 BCX55 BCX56 semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack­

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2210 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C

2SD2210

Contextual Info: Transistors 2SD2210 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 1.5±0.1 • Absolute Maximum Ratings Ta = 25°C Rating Unit Collector-base voltage Emitter open

113 marking code PNP transistor

Abstract: SOT89 MARKING CODE 16 transistor marking code AL marking code sot-89 AA marking AE SOT-89 Marking al pnp
Contextual Info: Central" BCX51 BCX52 BCX53 Semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX51, BCX52, and BCX53 types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount pack­

2SD1328

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1328 Silicon NPN epitaxial planar type For low-voltage output amplification For muting For DC-DC converter Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 2 1 (0.95) (0.95) 1.9±0.1