marking W26 sot23
Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
Text: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters
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OT23-3
OT-23)
OT23-5
OT-25)
TK73249M
OT23L-8
TK73250M
TK73255M
marking W26 sot23
SOT23-5 marking 016
sot23 w32
Marking c9 SOT23-5
W32 MARKING
SOT23-6 MARKING b4
sot89-5 PAD
Marking P35 sot89
SOT23-5 MARKING g5
Marking code 33 29 SOT89
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SOT-363 marking 05
Abstract: 2SC2412K W4501DW
Text: W4501DW Epitaxial Planer Transistor Silicon NPN 1 2 3 6 5 P b Lead Pb -Free 1 4 Features: 3 SOT-363(SC-88) 6 5 2 4 NPN+NPN * Both 2SC2412K Chip x 2 in a SOT-363 Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
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W4501DW
OT-363
SC-88)
2SC2412K
OT-363
W4501DW
30-Nov-05
SOT-363 marking 05
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W45B010
Abstract: W45B010P W45B010Z
Text: Preliminary W45B010 1M x 1 SERIAL FLASH MEMORY GENERAL DESCRIPTION The W45B010 is manufactured with Winbond’s high performance CMOS WinFlash technology. The Serial Flash is organized as 32 sectors of 4096 Bytes for the W45B010. The memory is accessed for
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W45B010
W45B010
W45B010.
W45B010P
W45B010Z
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W45B010
Abstract: W45B012 W45B012P W45B012Z
Text: Preliminary W45B012 1M x 1 SERIAL FLASH MEMORY GENERAL DESCRIPTION The W45B012 is manufactured with Winbond’s high performance CMOS WinFlash technology. The Serial Flash is organized as 32 sectors of 4096 Bytes for the W45B012. The memory is accessed for
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W45B012
W45B012
W45B012.
W45B010
W45B012P
W45B012Z
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W45B512
Abstract: W45B512P W45B512Z
Text: Preliminary W45B512 512K x 1 SERIAL FLASH GENERAL DESCRIPTION The W45B512 is manufactured with Winbond’s high performance CMOS WinFlash technology. The Serial Flash is organized as 16 sectors of 4096 Bytes for the W45B512. The memory is accessed for Read or Erase/Program by the SPI bus compatible serial protocol. The bus signals are: serial data
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W45B512
W45B512
W45B512.
End-of-Wr798
W45B512P
W45B512Z
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KIC73B24
Abstract: KIC73E27T2
Text: SEMICONDUCTOR KIC73A/B/C/D/E16~50T/T2 TECHNICAL DATA Analog CMOS Integrated Circuits CMOS System Reset IC Built-in Delay time circuit Monolithic IC KIC73A/B/C/D/E*T/T2 Series This IC is a system reset IC built in delay time circuit. KIC73 series is not required with an external capacitor, and then can use a
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KIC73A/B/C/D/E16
50T/T2
KIC73A/B/C/D/E*
KIC73
240/50/100/200/400ms
VTH-100mV)
KIC73B24
KIC73E27T2
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MARKING CODE ZAA
Abstract: 5000 volt scr MIL-A-8625 marking W36
Text: P1ZAA POW-R-BRIK Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Phase Control Dual Diode Module 985 Amperes/Up to 5000 Volts C L (4 PLACES) G (3 PLACES) TAPPED HOLE X .50 DEEP E - (4 PLACES) (FOR TYP. 1/4-20 SOCKET HD. SCR.
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MIL-A-8625,
MARKING CODE ZAA
5000 volt scr
MIL-A-8625
marking W36
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Abstract: No abstract text available
Text: P1ZAA POW-R-BRIK Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Phase Control Dual Diode Module 985 Amperes/Up to 5000 Volts C L (4 PLACES) G (3 PLACES) TAPPED HOLE X .50 DEEP E - (4 PLACES) (FOR TYP. 1/4-20 SOCKET HD. SCR.
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MIL-A-8625,
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Untitled
Abstract: No abstract text available
Text: CATALOG 128_CATALOG 128.qxd 4/24/2014 10:29 AM Page 52 VectorPaktm Instrument Cases & Frame-Loc Railstm Aluminum Instrument Cases Versatile Multi-Modtm cases are ideal for small case packaging of testers, controllers and other instruments. Brushed aluminum construction provides excellent RF
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W30-66-46B
W45-10-66B
W45-10-46B
W45-86-46B
W45-66-46B
W30-10-66B
W30-86-46B
W30-66-46B
W20-66-46B
W20-46-31B
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marking W45
Abstract: P6650 SR2-062 diode sr45 M4211 W45-10
Text: CATALOG 126:CATALOG 126.qxd 6/27/2007 ELECTRONICS & TECHNOLOGY, INC. A FINE TECHNOLOGY GROUP 2:48 PM Page 52 VectorPaktm Instrument Cases & Frame-Loc Railstm Aluminum Instrument Cases Versatile Multi-Modtm cases are ideal for small case packaging of testers, controllers and other instruments.
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W30-66-46B
W45-10-66B
W45-10-46B
W45-86-46B
W45-66-46B
W30-10-66B
W30-86-46B
W30-NC.
M4211D5
marking W45
P6650
SR2-062
diode sr45
M4211
W45-10
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marking W37
Abstract: transformer 220v 2a SMA100-300 marking W45 220V to 48V transformer transformer 220V
Text: SMA100 SERIES SURFACE MOUNT SURGE ARRESTORS FEATURES SOLID STATE SURGE ARRESTOR VOLTAGE RANGE = 200 V TO 265 V TIGHT VOLTAGE TOLERANCE FAST RESPONSE TIME VERY LOW AND STABLE LEAKAGE CURRENT REPETITIVE SURGE CAPABILITY Ipp = 100 A, 10/1000 µs FAIL-SAFE WHEN DESTROYED
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SMA100
marking W37
transformer 220v 2a
SMA100-300
marking W45
220V to 48V transformer
transformer 220V
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Photodiode, 1550nm, butterfly package
Abstract: W9804 1550nm Laser Diode with butterfly pin package w7124 w3425 1550nm Laser Diode butterfly w9041 oki LOT NUMBER marking laser DFB 1550nm 20mW 10gb W3268
Text: JOG-00952 OKI Electronics Components OL5104L-20-Wnnnn Rev.1 [Feb. 2002 ] 1550nm/20mW Laser Diode Butterfly Module with PMF, Built in Cooler, Isolator. 1. DESCRIPTION OL5104L-20-Wnnnn is a 1550nm Laser Diode in Butterfly package with PMF. 2. FEATURES • ·
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JOG-00952
OL5104L-20-Wnnnn
1550nm/20mW
OL5104L-20-Wnnnn
1550nm
14-pin
10Gb/s)
Photodiode, 1550nm, butterfly package
W9804
1550nm Laser Diode with butterfly pin package
w7124
w3425
1550nm Laser Diode butterfly
w9041
oki LOT NUMBER marking
laser DFB 1550nm 20mW 10gb
W3268
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w9041
Abstract: laser DFB 1550nm 20mW 10gb W9634 W6550 1550nm Laser Diode butterfly W8369 w405 W8957 1602.31 W4135
Text: Electronics Components OL5104L-20-Wnnnn ODLOL5104L-20-Wnnnn-02 Issue Date: Apr. 2002 1550nm/20mW Laser Diode Butterfly Module with PMF, Built in Cooler, Isolator. 1. DESCRIPTION OL5104L-20-Wnnnn is a 1550nm Laser Diode in Butterfly package with PMF. 2. FEATURES
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OL5104L-20-Wnnnn
ODLOL5104L-20-Wnnnn-02
1550nm/20mW
OL5104L-20-Wnnnn
1550nm
14-pin
10Gb/s)
w9041
laser DFB 1550nm 20mW 10gb
W9634
W6550
1550nm Laser Diode butterfly
W8369
w405
W8957
1602.31
W4135
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W45NM50FD
Abstract: of w45nm50fd w45nm50f STW45NM50FD W45NM50 ZVS phase-shift converters
Text: STW45NM50FD N-CHANNEL 500V - 0.07Ω - 45A TO-247 FDmesh MOSFET With FAST DIODE Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID STW45NM50FD 500V < 0.1Ω 45 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.07Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STW45NM50FD
O-247
O-247
W45NM50FD
of w45nm50fd
w45nm50f
STW45NM50FD
W45NM50
ZVS phase-shift converters
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W45NM50
Abstract: STW45NM50
Text: STW45NM50 N-CHANNEL 550V @ Tjmax - 0.08Ω - 45A TO-247 MDmesh MOSFET Table 1: General Features TYPE VDSS @Tjmax RDS(on) ID 550V < 0.1Ω 45 A STW45NM50 • ■ ■ ■ ■ ■ Figure 1: Package TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STW45NM50
O-247
W45NM50
STW45NM50
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W45NM60
Abstract: STW45NM60 JESD97 650V
Text: STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STW45NM60 650V < 0.11Ω 45A • High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge
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STW45NM60
O-247
W45NM60
STW45NM60
JESD97
650V
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W45NM60
Abstract: w45*60 STW45NM60 JESD97
Text: STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STW45NM60 650V < 0.11Ω 45A • High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge
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STW45NM60
O-247
W45NM60
w45*60
STW45NM60
JESD97
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STW45NM60
Abstract: W45NM60 JESD97 w45*60
Text: STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STW45NM60 650V < 0.11Ω 45A • High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge
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STW45NM60
O-247
STW45NM60
W45NM60
JESD97
w45*60
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w45nm50fd
Abstract: of w45nm50fd STW45NM50FD W45NM50 JESD97 ZVS phase-shift converters
Text: STW45NM50FD N-channel 500V - 0.07Ω - 45A - TO247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STW45NM50FD 500V <0.1Ω 45A • 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge
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STW45NM50FD
O-247
w45nm50fd
of w45nm50fd
STW45NM50FD
W45NM50
JESD97
ZVS phase-shift converters
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w45nm50fd
Abstract: data sheet of w45nm50fd STW45NM50FD w45nm50f W45NM50
Text: STW45NM50FD N-channel 500 V, 0.07 Ω, 45 A, TO-247 FDmesh Power MOSFET with fast diode Features Type VDSS RDS(on) max ID STW45NM50FD 500 V < 0.1 Ω 45 A • 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge
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STW45NM50FD
O-247
w45nm50fd
data sheet of w45nm50fd
STW45NM50FD
w45nm50f
W45NM50
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Untitled
Abstract: No abstract text available
Text: STW45NM50 N-channel 550 V @ TJmax, 0.08 Ω, 45 A, TO-247 MDmesh Power MOSFET Features Type VDSS RDS on max ID STW45NM50FD 500 V < 0.1 Ω 45 A • 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge
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STW45NM50
O-247
STW45NM50FD
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Untitled
Abstract: No abstract text available
Text: STW45NM50FD N-channel 500 V, 0.07 Ω, 45 A, TO-247 FDmesh Power MOSFET with fast diode Features Type VDSS RDS(on) max ID STW45NM50FD 500 V < 0.1 Ω 45 A • 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge
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STW45NM50FD
O-247
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Untitled
Abstract: No abstract text available
Text: ELW135 ELW136 ELW4503 8 PIN DIP WIDE BODY HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER Features • High speed 1Mbit/s • High isolation voltage between input and output Viso=5000 Vrms • Guaranteed performance from 0°C to 70°C • Wide operating temperature range of -55°C to 100°C
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ELW135
ELW136
ELW4503
ELW135,
ELW136
ELW4503
DPC-0000108
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marking W37
Abstract: Marking Code W45
Text: £ jJ SGS-THOMSON D glsì [llLiOT EDD(gi S M A 100 S E R IES SURFACE MOUNT SURGE ARRESTORS FEATURES • SOLID STATE SURGE ARRESTOR . VOLTAGE RANGE = 200 V TO 265 V ■ TIGHT VOLTAGE TOLERANCE ■ FAST RESPONSE TIME . VERY LOW AND STABLE LEAKAGE CURRENT ■ REPETITIVE SURGE CAPABILITY
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