nitto SWT 10
Abstract: nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04
Text: PRODUCT CODING SYSTEM QSP0005_WEB.028 1 2.4.2007 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document. ESD EWS ID MAS MBB T&R 2 Electrostatic Sensitive Device
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QSP0005
MAS1234AB3
MAS1234AB3xxxxx)
98AA2
MAS9198AA2xxxxx)
nitto SWT 10
nitto SWT-20
W07 sot 23
w04 transistor sot 23
UE-111AJ
W04 sot 23
transistor w07
transistor marking w08
marking W07
transistor marking w04
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WB4245
Abstract: No abstract text available
Text: SN74AVCB164245 16-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS www.ti.com SCES394D – JUNE 2002 – REVISED JUNE 2005 • FEATURES • • • • • Member of the Texas Instruments Widebus Family DOC™ Circuitry Dynamically Changes Output
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SN74AVCB164245
16-BIT
SCES394D
WB4245
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008 cow 734
Abstract: RDN240 WB4500 HT-SX gigabit ethernet over sdh 24B02 B3293 rxtcb 4 OIF-SFI401 3018* intel
Text: Intel WB4500 SDH/SONET STM-16/STS-48 Channelized Data Framer Datasheet Order Number: 274010-002 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS
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WB4500
STM-16/STS-48
5/00-126R2,
5/00-129R1,
5/2001-024R5,
008 cow 734
RDN240
WB4500
HT-SX
gigabit ethernet over sdh
24B02
B3293
rxtcb 4
OIF-SFI401
3018* intel
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WB201209
Abstract: WB160808 WB160808B300 WB1005 WB160808B100 WB160808B221 WB160808B102 WB3216 WB201209F800QLT04 WB321611B310QLT60
Text: Walsin Technology Corporation Lead Free Ferrite Beads Series Customer : Approval No : 013SZ-940145 Issue Date : 2005/05/18 Customer Approval : WALSIN Technology Corp. Authorized By : Chen-yuan Su Page 1 of 19 Lead Free Ferrite Beads version 04 March 2004 Walsin Technology Corporation
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013SZ-940145
WB201209
WB160808
WB160808B300
WB1005
WB160808B100
WB160808B221
WB160808B102
WB3216
WB201209F800QLT04
WB321611B310QLT60
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MRF377HR3
Abstract: NIPPON CAPACITORS DS1046 DVB-T acpr 845 motherboard circuit Nippon chemi
Text: Freescale Semiconductor Technical Data Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377HR3
MRF377HR5
NIPPON CAPACITORS
DS1046
DVB-T acpr
845 motherboard circuit
Nippon chemi
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845 motherboard circuit
Abstract: DS1046 NIPPON CAPACITORS 470-860 mhz Power amplifier w 470-860 mhz Power amplifier 5 w Nippon chemi 845 motherboard
Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377
MRF377R3
MRF377R5
845 motherboard circuit
DS1046
NIPPON CAPACITORS
470-860 mhz Power amplifier w
470-860 mhz Power amplifier 5 w
Nippon chemi
845 motherboard
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WB4245
Abstract: AVCB164245
Text: SN74AVCB164245 16-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS www.ti.com SCES394D – JUNE 2002 – REVISED JUNE 2005 • FEATURES • • • • • Member of the Texas Instruments Widebus Family DOC™ Circuitry Dynamically Changes Output
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SN74AVCB164245
16-BIT
SCES394D
WB4245
AVCB164245
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marking WB4
Abstract: NIPPON CHEMI nippon capacitors
Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377H
MRF377HR3
MRF377HR5
MRF377H
marking WB4
NIPPON CHEMI
nippon capacitors
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T491D106K010AT
Abstract: MRF377H PCN13170 nippon capacitors dvbt dvbt transmitter MRF377 T491D106K050at 3A412 Nippon chemi
Text: Freescale Semiconductor Technical Data Document Number: MRF377H Rev. 2, 3/2009 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377HR3 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377H
MRF377HR3
T491D106K010AT
MRF377H
PCN13170
nippon capacitors
dvbt
dvbt transmitter
MRF377
T491D106K050at
3A412
Nippon chemi
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF377H Rev. 2, 3/2009 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377H
MRF377HR3
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377
MRF377R3
MRF377R5
MRF377
MRF377R3
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MRF377
Abstract: 845 motherboard circuit 0805J resistor kyocera 845 motherboard dvbt nippon capacitors 2508051107Y0 datasheet dvbt transmitter Nippon chemi
Text: Freescale Semiconductor Technical Data Document Number: MRF377 Rev. 1, 12/2004 RF Power Field - Effect Transistor MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377
MRF377R3
MRF377R5
MRF377
MRF377R3
845 motherboard circuit
0805J
resistor kyocera
845 motherboard
dvbt
nippon capacitors
2508051107Y0
datasheet dvbt transmitter
Nippon chemi
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MRF377H
Abstract: dvbt transmitter MRF377HR3 resistor kyocera 845 motherboard circuit nippon capacitors MRF377 2508051107Y0 64 QAM Transmitter Nippon chemi
Text: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377H
MRF377HR3
MRF377HR5
MRF377HR3
MRF377H
dvbt transmitter
resistor kyocera
845 motherboard circuit
nippon capacitors
MRF377
2508051107Y0
64 QAM Transmitter
Nippon chemi
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MRF377H
Abstract: nippon capacitors J628 Nippon chemi
Text: Freescale Semiconductor Technical Data MRF377H Rev. 1, 5/2006 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377H
MRF377HR3
MRF377HR5
MRF377H
nippon capacitors
J628
Nippon chemi
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transistor amplifier 1ghz 1400 watts
Abstract: nippon capacitors 0603HC-10NXJB Nippon chemi
Text: MRF377 Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377
MRF377R3
MRF377R5
transistor amplifier 1ghz 1400 watts
nippon capacitors
0603HC-10NXJB
Nippon chemi
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nippon capacitors
Abstract: dvbt transmitter j564 Nippon chemi
Text: Freescale Semiconductor Technical Data MRF377H Rev. 0, 1/2005 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF377HR3 MRF377HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these
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MRF377H
MRF377HR3
MRF377HR5
nippon capacitors
dvbt transmitter
j564
Nippon chemi
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2DS1047
Abstract: nippon capacitors Nippon chemi
Text: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF377 MRF377R3 MRF377R5 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF377
MRF377R3
MRF377R5
MRF377
2DS1047
nippon capacitors
Nippon chemi
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MRF377H
Abstract: 470-860 mhz Power amplifier w nippon capacitors 08051J4R7BBS 0805J C182
Text: Freescale Semiconductor Technical Data RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF377HR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance
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MRF377H
27conductor
MRF377HR3
MRF377H
470-860 mhz Power amplifier w
nippon capacitors
08051J4R7BBS
0805J
C182
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Tech 39 inductor 77 360
Abstract: WI 453232 403025 WIC-453232-4R7 HPA2 WIC-453232-5R6 11.250mhz 3300 XL WB-403025 WI322522
Text: HOUSING TECH. CORP. WOUND CHIP BEAD WB TYPE WB TYPE PRODUCT IDENTIFICATION 1. PORDUCT SYMBOLE WB - 40 30 1 2 3 25 2. DIMENSION (A) 4 3. DIMENSION (B) 4. DIMENSION (C) SHAPES & DIMENSIONS C A B B C A DIMENSIONS (mm) IMPEDANCE (Ω) A B C D 25 MHz 100 MHz
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WB-403025
WB-853025
Tech 39 inductor 77 360
WI 453232
403025
WIC-453232-4R7
HPA2
WIC-453232-5R6
11.250mhz
3300 XL
WB-403025
WI322522
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93F2975
Abstract: 865 marking amplifier MRF9120LR3
Text: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9120R3 MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these
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MRF9120R3
MRF9120LR3
93F2975
865 marking amplifier
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wb4 marking
Abstract: J152 mosfet transistor 2110 transistor
Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
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MRF21180R6
wb4 marking
J152 mosfet transistor
2110 transistor
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rf push pull mosfet power amplifier
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 9, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of
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MRF9120
MRF9120LR3
MRF9120
rf push pull mosfet power amplifier
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rf push pull mosfet power amplifier
Abstract: MRF9120 MRF9120LR3 marking WB4
Text: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of
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MRF9120
MRF9120LR3
rf push pull mosfet power amplifier
MRF9120
MRF9120LR3
marking WB4
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MRF9120
Abstract: MRF9120LR3
Text: Document Number: MRF9120 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of
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MRF9120
MRF9120LR3
IS-95
MRF9120
MRF9120LR3
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