MARKING WC 8N Search Results

Contextual Info: TYPE WC 3.2X2.5 VOLTAGE CONTROLLED TEMPERATURE COMPENSATED CRYSTAL OSCILLATOR WC325BI0020.000000 VER. 02 8-Nov-12 ELECTRICAL SPECIFICATIONS SRe Part Number : WC325BI0020.000000 Item Symbol Specifications Units Nominal Frequency Fo 20.000000 MHz Operating Temperature Range

Contextual Info: TYPE WC 3.2X2.5 VOLTAGE CONTROLLED TEMPERATURE COMPENSATED CRYSTAL OSCILLATOR WC325BI0020.000000 VER. 02 8-Nov-12 ELECTRICAL SPECIFICATIONS SRe Part Number : WC325BI0020.000000 Item Symbol Specifications Units Nominal Frequency Fo 20.000000 MHz Operating Temperature Range

Contextual Info: TYPE WC 3.2X2.5 VOLTAGE CONTROLLED TEMPERATURE COMPENSATED CRYSTAL OSCILLATOR WC325BI0026.000000 VER. 02 8-Nov-12 ELECTRICAL SPECIFICATIONS SRe Part Number : WC325BI0026.000000 Item Symbol Specifications Units Nominal Frequency Fo 26.000000 MHz Operating Temperature Range

Contextual Info: TYPE WC 3.2X2.5 VOLTAGE CONTROLLED TEMPERATURE COMPENSATED CRYSTAL OSCILLATOR WC325CI0019.200000 VER. 02 8-Nov-12 ELECTRICAL SPECIFICATIONS SRe Part Number : WC325CI0019.200000 Symbol Specifications Units Nominal Frequency Fo 19.200000 MHz Operating Temperature Range

Contextual Info: TYPE WC 3.2X2.5 VOLTAGE CONTROLLED TEMPERATURE COMPENSATED CRYSTAL OSCILLATOR WC325CI0019.200000 VER. 02 8-Nov-12 ELECTRICAL SPECIFICATIONS SRe Part Number : WC325CI0019.200000 Item Symbol Specifications Units Nominal Frequency Fo 19.200000 MHz Operating Temperature Range

Contextual Info: TYPE WC 3.2X2.5 VOLTAGE CONTROLLED TEMPERATURE COMPENSATED CRYSTAL OSCILLATOR WC325BI0019.200000 VER. 02 8-Nov-12 ELECTRICAL SPECIFICATIONS SRe Part Number : WC325BI0019.200000 Item Symbol Specifications Units Nominal Frequency Fo 19.200000 MHz Operating Temperature Range

Contextual Info: TYPE WC 3.2X2.5 VOLTAGE CONTROLLED TEMPERATURE COMPENSATED CRYSTAL OSCILLATOR WC325BI0010.000000 VER. 02 8-Nov-12 ELECTRICAL SPECIFICATIONS SRe Part Number : WC325BI0010.000000 Symbol Specifications Units Nominal Frequency Fo 10.000000 MHz Operating Temperature Range

Contextual Info: TYPE WC 3.2X2.5 VOLTAGE CONTROLLED TEMPERATURE COMPENSATED CRYSTAL OSCILLATOR WC325BI0026.000000 VER. 02 8-Nov-12 ELECTRICAL SPECIFICATIONS SRe Part Number : WC325BI0026.000000 Item Symbol Specifications Units Nominal Frequency Fo 26.000000 MHz Operating Temperature Range

Contextual Info: TYPE WC 3.2X2.5 VOLTAGE CONTROLLED TEMPERATURE COMPENSATED CRYSTAL OSCILLATOR WC3251I0019.200000 VER. 02 8-Nov-12 ELECTRICAL SPECIFICATIONS SRe Part Number : WC3251I0019.200000 Item Symbol Specifications Units Nominal Frequency Fo 19.200000 MHz Operating Temperature Range

Contextual Info: TYPE WC 3.2X2.5 VOLTAGE CONTROLLED TEMPERATURE COMPENSATED CRYSTAL OSCILLATOR WC325BI0019.200000 VER. 02 8-Nov-12 ELECTRICAL SPECIFICATIONS SRe Part Number : WC325BI0019.200000 Symbol Specifications Units Nominal Frequency Fo 19.200000 MHz Operating Temperature Range

Contextual Info: TYPE WC 3.2X2.5 VOLTAGE CONTROLLED TEMPERATURE COMPENSATED CRYSTAL OSCILLATOR WC3251I0019.200000 VER. 02 8-Nov-12 ELECTRICAL SPECIFICATIONS SRe Part Number : WC3251I0019.200000 Symbol Specifications Units Nominal Frequency Fo 19.200000 MHz Operating Temperature Range

Contextual Info: TYPE WC 3.2X2.5 VOLTAGE CONTROLLED TEMPERATURE COMPENSATED CRYSTAL OSCILLATOR WC325BI0010.000000 VER. 02 8-Nov-12 ELECTRICAL SPECIFICATIONS SRe Part Number : WC325BI0010.000000 Item Symbol Specifications Units Nominal Frequency Fo 10.000000 MHz Operating Temperature Range

Contextual Info: ADVANCE M T5LC 1005 256K X 4 SR AM MICRON 256K X 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE FEATURES • High speed: 20,25,35 and 45ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply • Easy memory expansion with CE and OE options

GVT7264A18J-10L

Abstract: abe 741 DQ10-DQ18
Contextual Info: PRELIMINARY GALVANTECH, INC. GVT7264A18 REVOLUTIONARY PINOUT 64K X 18 ASYNCHRONOUS SRAM 64K x 18 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • The GVT7264A18 is organized as a 65,536 x 18 SRAM

marking RAV

Abstract: DJ28
Contextual Info: PRELIMINARY M I C R O M T 5 L C 1 008 128K X 8 SRAM N SRAM 128Kx 8 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I / O pins are 5V tolerant • High speed: 15,17, 20 and 25ns • High-perform ance, low -pow er; CM OS double-metal process _ • Single +3.3V ±0.3V power supply

Contextual Info: ADVANCE M I C R O N I M T 5 LC 1 008 128K X 8 S R A M LOW VOLTAGE WITH OUTPUT ENABLE FEATURES PIN ASSIGNMENT Top View • High speed: 20,25,35 and 45ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply _ • Easy memory expansion with CE1, CE2 and OE

Contextual Info: ADVANCE M T 5L C 1005 256K X 4 SRAM |V|IC=RON 256Kx 4 SRAM SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I / O pins are 5V tolerant • High speed: 15,1 7 , 20, 25, 35 and 45ns • High-perform ance, low-power, CM OS double-metal process • Single +3.3V ±0.3V power supply

SRAM TTL

Contextual Info: I^ IIC R O IM 16K M T5C6405 X 4 SRAM 16K x 4 SRAM SRAM FEATURES PIN ASSIGNMENT Top View • High speed: 8*, 10,12,15, 20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options

Contextual Info: p ilC R O N MT5C1601 SRAM 16K X 1 SRAM • H igh speed: 8, 10, 12, 15, 20, 25 and 35ns • H igh-perform ance, low -pow er, CM O S double-m etal process • Single +5V ± 1 0 ^ pow er supply • Easy m em ory expansion w ith CE option • All inputs and outputs are TTL com patible

UA 741 datasheet

Abstract: ci 741 GVT7264A16 7264A16
Contextual Info: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT7264A16 REVOLUTIONARY PINOUT 64K X 16 64K x 16 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • The GVT7264A16 is organized as a 65,536 x 16 SRAM using a four-transistor memory cell with a high performance,

GVT73256A16

Contextual Info: GALVANTECH, INC. GVT73256A16 REVOLUTIONARY PINOUT 256K X 16 ASYNCHRONOUS SRAM 256K x 16 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • The GVT73256A16 is organized as a 262,144 x 16 SRAM using a four-transistor memory cell with a high

GVT7264A16

Contextual Info: GALVANTECH, INC. GVT7264A16 REVOLUTIONARY PINOUT 64K X 16 ASYNCHRONOUS SRAM 64K x 16 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • The GVT7264A16 is organized as a 65,536 x 16 SRAM using a four-transistor memory cell with a high performance,

Contextual Info: PRELIMINARY MT5LC1008 128K X 8 SRAM |U|IC=RON 128K x 8 S R A M SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I/O pins are 5V tolerant • High speed: 15,17,20 and 25ns • High-performance, low-power, CMOS double-metal process _ • Single +3.3V ±0.3V power supply

72256A16

Abstract: GVT72256A16
Contextual Info: ADVANCE INFORMATION GALVANTECH, INC. GVT72256A16 REVOLUTIONARY PINOUT 256K X 16 ASYNCHRONOUS SRAM 256K x 16 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • The GVT72256A16 is organized as a 262,144 x 16