MARKING WGS Search Results

Contextual Info: SIEMENS BCR 116W NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kfl, R2=47kfi _ 0_ LT t r Marking Ordering Code Pin Configuration BCR 116W WGs UPON INQUIRY 1= B Package LU

Contextual Info: SIEMENS BCR116W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i=4.7kii, R2=47kii & Pin Configuration Package II CO 1= B O UPON INQUIRY li WGs LU Marking Ordering Code BCR 116W

wgs SOT-23

Abstract: transistor B 116 transistor marking code wgs Q62702-C2337 marking WGs
Contextual Info: SIEMENS BCR 116 NPN Silicon Digital Transistor •Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R-|=4.7k£i, R2=47ki2 1= B Q62702-C2337 Package 2=E II Pin Configuration WGs o Marking Ordering Code BCR 116 CO Type

Contextual Info: SIEMENS BCR 116 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=4.7k£2, R2=47k£2 n TT Ordering Code Pin Configuration WGs Q62702-C2337 1= B Package 2=E o Marking BCR 116 II CO Type

transistor marking code wgs

Contextual Info: BCR 116W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 116W WGs 1=B UPON INQUIRY Package 2=E 3=C SOT-323

zkb* vac

Abstract: PLC GE FANUC VAC ZKB 420 Current Transformer ZKB siemens 230 gas discharge tube 90 88 pm WDU-2.5 fanuc 11 MF 101120000 vac zkb 8708660000
Contextual Info: RELAYS FIELDBUS CONNECTORS CIRCUIT BREAKERS OVERVOLTAGE PROTECTORS CABLE AND ELECTRONIC FUSES PRODUCTS DIN-RAIL MOUNTED TERMINAL BLOCKS TOOLS & MARKING SYSTEMS PROTECTED CONNECTORS PCB CONNECTORS & TERMINAL BLOCKS SIGNAL CONDITIONERS POWER SUPPLIES WIRING SOLUTIONS

wgs SOT-23

Abstract: transistor marking code wgs Q62702-C2337
Contextual Info: BCR 116 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 116 WGs 1=B Q62702-C2337 Package 2=E 3=C SOT-23 Maximum Ratings

VSO05561

Abstract: SOT-323 marking WGS
Contextual Info: BCR 116W NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ; R2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 116W WGs Pin Configuration 1=B 2=E Package

BCR116W

Abstract: VSO05561
Contextual Info: BCR116W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k; R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR116W WGs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR116

Abstract: EHA07184
Contextual Info: BCR116 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR116 WGs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR116W

Abstract: VSO05561
Contextual Info: BCR116W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k; R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR116W WGs Pin Configuration 1=B 2=E Package 3=C SOT323

BCR116

Contextual Info: BCR116 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR116 WGs Pin Configuration 1=B 2=E Package 3=C SOT23

wgs SOT-23

Contextual Info: BCR 116 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 116 WGs Pin Configuration 1=B 2=E Package

ss98 transistor

Abstract: transistor marking code wgs
Contextual Info: SIEMENS BSS 98 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.1.6 V Type BSS 98 Vds 50 V Type BSS 98 BSS 98 BSS 98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 b 0.3 A %S(on) 3.5 £2 Package Marking

Contextual Info: WGSMF05C 5-Line ESD Array Peak Pulse Power 100 Watts Reverse Working Voltage 5.0 VOLTS P b Lead Pb -Free Features: * 100 Watts Peak Pulse Power per Line(tp=8/20µs) * Protects Up To Four / Five I/O Lines * Ultra-Small SC-89 Package (1.6 x 1.6 x 0.55mm) Requires Less Than 2.9mm2 Of PCB Area

EN6100-4

Abstract: SOT-563 sot-563 EC
Contextual Info: WGSMF05C 5-Line TVS Array Peak Pulse Power 100 Watts Reverse Working Voltage 5.0 VOLTS P b Lead Pb -Free Features: * 100 Watts Peak Pulse Power per Line(tp=8/20 s) * Monolithic Structure * Low Clamping Voltage * IEC Compatibility(EN6100-4) 61000-4-2(ESD): Air–15kV, Contact-8kV

BCR116

Abstract: BCR116F BCR116L3 BCR116S BCR116T BCR116W
Contextual Info: BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7 kΩ, R2=47 kΩ • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see

infineon marking code B2 SOT23

Abstract: marking WGs sot23 transistor marking code wgs marking code R2 sot23 BCR108T BCR116 BCR116F BCR116S BCR116W SC75
Contextual Info: BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7 kΩ, R2 =47 kΩ • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see

wgs SOT-23

Abstract: transistor marking code wgs
Contextual Info: BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7 kΩ, R2 =47 kΩ • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see

marking WGs sot23

Abstract: transistor marking code wgs BCR116
Contextual Info: BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7 kΩ, R2=47 kΩ • BCR116S: Two internally isolated transistors with good matching in one multichip package BCR116/F/L3

marking WGs sot23

Abstract: transistor marking code wgs infineon marking code B1 SOT23
Contextual Info: BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7 kΩ, R2=47 kΩ • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see

Contextual Info: BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7 kΩ, R2=47 kΩ • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see

fr5 transistor

Abstract: bfs17 Motorola transistor SOT23 w7 BSR56 motorola MN transistor BFS17 BSR57 BSR58 BSS63 BSS64
Contextual Info: n O T O R O L A SC Í X S T R S / R 6367254 F> W|b3b?5SM "Tt MOTOROLA SC XSTRß/R OüantM 96D 8 1 9 6 4 F D r - 3 h / s M A X IM U M R A TIN G S Sym bol Value U nit Collector-Em itter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 25 Vdc Sym bol Max U nit

Contextual Info: SN74LV1T32 www.ti.com SCLS741 – NOVMEBER 2013 Single Power Supply 2-INPUT POSITIVE OR GATE CMOS Logic Level Shifter Check for Samples: SN74LV1T32 FEATURES DESCRIPTION • SN74LV1T32 is Low Voltage CMOS gate logic and operates in wider voltage range for portable