MARKING WUS Search Results

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

Contextual Info: SIEMENS BCR 162 PNP Silicon Digital Transistor »Switching circuit, inverter, interface circuit, drivere circuit »Built in bias resistor R-|=4.7kii, R2=4.7kQ □ ET Type Marking Ordering Code Pin Configuration BCR 162 WUs Q62702-C2378 1=B Package 2=E 3=C

Contextual Info: SIEMENS BCR 162 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drivere circuit * Built in bias resistor R1=4.7ki2, R2=4.7kQ Type BCR 162 Marking Ordering Code Pin Configuration WUs 1=B Q62702-C2378 Package 2=E 3=C SOT-23

BCR162F

Abstract: BCR162 BCR162L3 BCR162T SC75
Contextual Info: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B

Contextual Info: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B

Marking WUS sot

Contextual Info: BCR 162W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drivere circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 162W WUs 1=B UPON INQUIRY Package 2=E 3=C SOT-323

Q62702-C2378

Abstract: Marking WUS sot
Contextual Info: BCR 162 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, drivere circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 162 WUs 1=B Q62702-C2378 Package 2=E 3=C SOT-23

DIN 6784

Abstract: BCR162F SOT23 WU BCR108T BCR162 BCR162L3 BCR162T E6327 SC75
Contextual Info: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B

Contextual Info: BCR162. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 4.7kΩ BCR162/F/L3 BCR162T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration BCR162 WUs 1=B

BCR162T

Abstract: SC75
Contextual Info: BCR162T PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type Marking BCR162T WUs Pin Configuration 1=B 2=E Package 3=C SC75

SC-75

Contextual Info: BCR 162T PNP Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=4.7kΩ 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type Marking BCR 162T WUs Pin Configuration 1=B 2=E Package

BCR162

Contextual Info: BCR162 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR162 WUs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR162T

Abstract: SC75
Contextual Info: BCR162T PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07183 Type Marking BCR162T WUs Pin Configuration 1=B 2=E Package 3=C SC75

Contextual Info: BCR 162 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR 162 WUs Pin Configuration 1=B 2=E Package 3=C SOT-23

MARKING CODE wus SOT363

Abstract: BCR-35PN MARKING CODE W1s MARKING WUs Infineon BCR35PN
Contextual Info: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1 =10 kΩ, R2 =47 kΩ)

LPST1

Abstract: VDE 0110 G
Contextual Info: PCB Circuit Board Edge Connector Modular Feed-through Terminal Blocks VDE 0110 Gr.C_ _ Materials: Insulation body- Polypropylene* UL Connectors C opper alloy, nickel plated W idth 6 mm 150V, 20 A, No. 12 AWG m ax. Solder lug E-Cu hot dip p e d

marking 215

Abstract: MARKING CODE wus SOT363 pin configuration of ic IC Marking AC 6 PIN
Contextual Info: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =47 kΩ)

infineon marking W1s

Abstract: BCR108S BCR35PN
Contextual Info: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2=47 kΩ)

Contextual Info: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =47 kΩ)

MARKING CODE wus SOT363

Contextual Info: BCR35PN NPN/PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit 4 5 6 • Two galvanic internal isolated NPN/PNP 1 Transistors in one package 2 3 • Built in bias resistor NPN and PNP (R1=10 kΩ, R2 =47 kΩ)

TC1072

Abstract: TC1073 TC1107 TC1108 TC1173 TC1185 TC1186 TC1187 MICROCHIP E3 E5 6-PIN marking f1
Contextual Info: TC1072/TC1073 50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass Features • Zero Ground Current for Longer Battery Life • Very Low Dropout Voltage • Choice of 50mA TC1072 and 100mA (TC1073) Output • High Output Voltage Accuracy

Contextual Info: TC1072/TC1073 50mA and 100mA CMOS LDOs with Shutdown, ERROR Output and VREF Bypass Features • Zero Ground Current for Longer Battery Life • Very Low Dropout Voltage • Choice of 50mA TC1072 and 100mA (TC1073) Output • High Output Voltage Accuracy

Contextual Info: TC1034/TC1035 Linear Building Block – Single Operational Amplifiers in SOT Packages Features General Description • • • • The TC1034/TC1035 are single CMOS operational amplifiers for low power applications. Tiny SOT-23A Package Optimized for Single Supply Operation