MARKING XD DIODE Search Results

DTZ2.0A

Abstract: DTZ75A PTZ2.4B PTZ16A DTZ30C PTZ27A RLZ24 DTZ4.7 RLz500 DTZ7.5C
Contextual Info: Part Marking RBNm Mold type # Diodes Pal Making Note : «S ee P. 186 for detait. 185 Part Marking Q Zener Diodes PTZ Series Mold type CD CD 1 1 1 2 2 1 3 2 1 2 1 2 4 1 4 5 5 6 6 7 7 2 2 3 Part No. 1 2 1 2 1 2 8 8 8 1 2 3 1 2 3 1 2 3 1 2 3 1 2 3 1 2 3 1 2

zener diode xz 055

Abstract: zener diode xb XZ 068 Zener diode x6 xl marking sod-323 CMDZ5261B X8 zener ZENER diode Y8 CMDZ5231B CMDZ5258B
Contextual Info: Central CMDZ5221B THRU CMDZ5261B TM Semiconductor Corp. SUPERminiTM SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a

CMDZ5254B

Contextual Info: CMDZ5221B THRU CMDZ5261B SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a super-mini surface mount

diode marking code YF

Abstract: bzx84c MARKING CODE YA BZX84C56 diode marking sew diode marking YF marking code YF diode marking YF xf 375 marking code YK
Contextual Info: BZX84C…SEW Series SILICON PLANAR ZENER DIODES 3 1 2 1. Anode 3. Cathode Absolute Maximum Ratings Ta = 25 C O Parameter Symbol Value Unit PD 200 mW Tj ,TS - 55 to + 150 Power Dissipation Operating Junction and Storage Temperature Range C O Electrical Characteristics ( Ta = 25 OC unless otherwise noted, VF < 0.9 V at IF = 10 mA)

95 marking

Abstract: X8 zener X8 diode zener
Contextual Info: Central' CMDZ5221B THRU CMDZ5261B Semiconductor Corp. SUPERmini SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a

X8 zener

Abstract: X5 555 Zener diode x6 CMDZ5221B CMDZ5222B CMDZ5223B CMDZ5224B CMDZ5225B CMDZ5226B CMDZ5227B
Contextual Info: CMDZ5221B THRU CMDZ5261B SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a super-mini surface mount

transistor smd zG

Abstract: diode 400mw 4v7 smd transistor marking wy smd diode marking 325 smd transistor marking zg ZD 5V6 zener SMD XW transistor smd za transistor smd zc wy smd transistor
Contextual Info: Diodes SMD Type Zener Diodes BZX284 Series SOD110 Unit: mm Features Total Power Dissipation: Max. 400mW Two Tolerance Series: 2% and cathode idenfifier 5% Working Voltage Range: Nom. 2.4 to 75V Absolute Maximum Ratings Ta = 25 Parameter Total Power Dissipation

15W ZENER DIODES

Abstract: XD 105 94V-0 colour code zener
Contextual Info: 1.5W ZENER DIODES SMZJ SERIES • LOW ZENER IMPEDANCE AND LOW REGULATION FACTOR • UL 94V-0 PLASTIC PACKAGE ACCEPTS HIGH TEMP. SOLDERING: 250˚C FOR 10s AT TERMINALS SMZJ SERIES Max. ratings and characteristics @ 25˚C unless specified PM Av : 1.5W @ 75˚C

X8 diode zener

Abstract: X2 diode zener 3.3 volt zener diode CMDZ5258B diode marking x6 diode marking x7 5 volts ZENER DIODE CMDZ5232B CMDZ5261B diode marking 355
Contextual Info: Central CMDZ5221B THRU CMDZ5261B TM Semiconductor Corp. SUPERminiTM SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a

zener diode xb

Abstract: D 4515 Z5248B 5231B diode SOD 323 diode 830 X8 diode zener MARKING CODE LTS 5226B
Contextual Info: Central" CMDZ5221B THRU CMDZ5261B Sem iconductor Corp. SUPERmini SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMDZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a

MM5Z30B

Abstract: diode smd marking jy SMD Diode KE transistor smd marking KE smd diode code kc smd marking Kk smd marking code KN marking code smd ky smd marking ky smd diode marking KC
Contextual Info: MM5Z2V2B~MM5Z39B SILICON PLANAR ZENER DIODES FEATURES PINNING • Total power dissipation: max. 200 mW PIN • Small plastic package suitable for surface mounted design DESCRIPTION 1 Cathode 2 Anode 2 1 DESCRIPTION Top View Simplified outline SOD-523 and symbol

XH8 marking

Abstract: marking XD SMS7630-011LF MARKING XH8 SMS7621-015LF SMS7621-517 SMS7621-006LF SMS7621-074LF 1E5 MARKING SMS7630-005LF
Contextual Info: DATA SHEET Surface Mount Mixer and Detector Schottky Diodes Features ● Designed for high-volume commercial applications Available lead Pb -free and RoHS-compliant MSL-1 @ 260 °C(1) per JEDEC J-STD-020 ● Tight parameter distribution ● Available as singles and pairs

SLA560

Abstract: SLA560BBT SLA560BBT3F TSZ22111 marking 02 information lot
Contextual Info: PRODUCTS VISUAL LIGHT E M im N G DIODE - TYPE SLA560BBT 1. CONSTRUCTION 2. USAGE Source o f light for display unit 3. DIMENSIONS See Figure. 1 4. ABSOLUTE MAXIMUM RATINGS 6 / InGaN on SiC blue visual light emitting diodes packaged with colorless epoxy. Ta=25°C

PG-DSO-8-16

Abstract: automotive ecu ISO9141 AEA03404 AEA03408 AEB03405 AEP03406 AET03409 GPS01181 TLE6258-2G
Contextual Info: Data Sheet, Rev. 2.1, Aug. 2007 TLE6258-2G LIN Transceiver Automotive Power Edition 2007-08-08 Published by Infineon Technologies AG 81726 Munich, Germany 2004 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

IEC61000-4-4

Contextual Info: mESD3.3DT5G SERIES ESD Protection Diodes In Ultra Small SOT-723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board

Contextual Info: mESD3.3DT5G SERIES ESD Protection Diodes In Ultra Small SOT-723 Package The mESD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board

Contextual Info: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 TVS Diodes - Surface Mount - 400 Watt Specifications - P4SMAJ Series Electrical Characteristics 10/1000µs Maximum Maximum 10/1000µs Rated Breakdown Voltage Stand By Clamping Rated Peak

Contextual Info: IPB049N06L3 G IPP052N06L3 G Jf]R  3 Power-Transistor Product Summary Features R฀#562=฀7@C฀9:89฀7C6BF6?4J฀DH:E49:?8฀2?5฀DJ?4 ฀C64 R฀ AE:>:K65฀E649?@=@8J฀7@C฀ ฀4@?G6CE6CD V 9I . K R -@?>2I฀-' ,&/ Z I9 0( 6

IPB230N06L3

Abstract: IPP230N06L3 G s4si
Contextual Info: IPB230N06L3 G IPP230N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD V 9I . K R 9I"\[#$ZNe *+ Z" I9 +( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 

Contextual Info: IPB081N06L3 G IPP084N06L3 G Jf]R  3 Power-Transistor Product Summary Features R฀#562=฀7@C฀9:89฀7C6BF6?4J฀DH:E49:?8฀2?5฀DJ?4 ฀C64 R฀ AE:>:K65฀E649?@=@8J฀7@C฀ ฀4@?G6CE6CD V 9I . K R -@?>2I฀-' 0&) Z I9 -( 6

sf hd 850

Abstract: TVS MARKING WZ P4SMAJ sd 484 ip
Contextual Info: TVS DIODES P4SMAJ Series — 400 Watt Surface Mount P4SMAJ Series Features • 400 watt peak pulse power dissipation • Available in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor •

IPP037N06L3 G

Contextual Info: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G  3 Power-Transistor Product Summary Features V 9I . K R฀#562=฀7@C฀9:89฀7C6BF6?4J฀DH:E49:?8฀2?5฀DJ?4 ฀C64 R -@?>2I฀-' +&, Z R฀ AE:>:K65฀E649?@=@8J฀7@C฀ ฀4@?G6CE6CD

P4SMAJ

Abstract: P4SMAJ20A
Contextual Info: TVS DIODES P4SMAJ Series — 400 Watt Surface Mount P4SMAJ Series Features • 400 watt peak pulse power dissipation • Avaliable in voltages from 5.0V to 170V • Unidirectional and bidirectional • Glass passivated junction • Low clamping factor •

marking xd diode

Abstract: e866 marking 8fc marking J6c s4si
Contextual Info: IPB081N06L3 G IPP084N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD   I9 . K 0&) Z" -( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) '