marking YB
Abstract: YB MARKING KRC822U
Text: SEMICONDUCTOR KRC822U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking YB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark YB KRC822U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRC822U
marking YB
YB MARKING
KRC822U
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KRC822E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC822E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking YB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark YB KRC822E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRC822E
KRC822E
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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Untitled
Abstract: No abstract text available
Text: BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 3 2 1 2 1 MARKING SOT-323 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage
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BAT54SWT1G/BAT54CWT1G
BAT54SWT1G
BAT54CWT1G
OT-323
BAT54SWT1G/BAT54CWT1G
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BAT54CWT1G
Abstract: BAT54SWT1G
Text: BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 3 2 1 MARKING SOT-323 2 1 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage
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BAT54SWT1G/BAT54CWT1G
BAT54SWT1G
BAT54CWT1G
OT-323
BAT54SWT1G/BAT54CWT1G
BAT54CWT1G
BAT54SWT1G
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capacitive touch sensor pcb guideline
Abstract: ticomel transformer electronic passive components catalog EN132400 znr 10k varistor s241000 5500.206 "SCHURTER" "Catalogue"
Text: Product Group Catalog EMC Products www.schurter.com/emc 1-Phase Line Filters www.schurter.com > summary Intro Information 4 1-phase line filters Keyword Index Product Datasheets 6 6 12 General Product Information Product Standard / Definitions / CE-Marking / Conformity
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schottky diode cross reference
Abstract: FYV0203DSMTF FAIRCHILD DIODE
Text: FYV0203S/DN/DP/DS FYV0203S/DN/DP/DS Connection Diagram 3 3 3 3 YB1 1 2 1 SOT-23 2 1 FYV0203DP 2 3 3 1 FYV0203DN 2 1 FYV0203DS 2 Marking FYV0203S = YB1 FYV0203DN = YB2 1 FYV0203S FYV0203DP = YB3 FYV0203DS = YB4 Schottky Diode Absolute Maximum Ratings TA=25°°C unless otherwise noted
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FYV0203S/DN/DP/DS
FYV0203S
FYV0203DP
FYV0203S
FYV0203DN
FYV0203DP
FYV0203DS
OT-23
FYV0203DN
schottky diode cross reference
FYV0203DSMTF
FAIRCHILD DIODE
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Untitled
Abstract: No abstract text available
Text: FYV0203S/DN/DP/DS FYV0203S/DN/DP/DS Connection Diagram 3 3 3 3 YB1 1 2 1 SOT-23 2 1 FYV0203DP 2 3 3 1 FYV0203DN 2 1 FYV0203DS 2 Marking FYV0203S = YB1 FYV0203DN = YB2 1 FYV0203S FYV0203DP = YB3 FYV0203DS = YB4 Schottky Diode Absolute Maximum Ratings TA=25°°C unless otherwise noted
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FYV0203S/DN/DP/DS
OT-23
FYV0203S
FYV0203DP
FYV0203DN
FYV0203DS
FYV0203DN
FYV0203DP
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FYV0203DN
Abstract: FYV0203DP FYV0203DS FYV0203S
Text: FYV0203S/DN/DP/DS FYV0203S/DN/DP/DS Connection Diagram 3 3 3 3 YB1 1 2 1 SOT-23 2 1 FYV0203DP 2 3 3 1 FYV0203DN 2 1 FYV0203DS 2 Marking FYV0203S = YB1 FYV0203DN = YB2 1 FYV0203S FYV0203DP = YB3 FYV0203DS = YB4 Schottky Diode Absolute Maximum Ratings TA=25°°C unless otherwise noted
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FYV0203S/DN/DP/DS
OT-23
FYV0203S
FYV0203DP
FYV0203DN
FYV0203DS
FYV0203DN
FYV0203DP
FYV0203S
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74HC4316A
Abstract: MC14016 MC14066 MC74HC4316A 948F HC4316A
Text: MC74HC4316A Product Preview Quad Analog Switch/ Multiplexer/Demultiplexer with Separate Analog and http://onsemi.com Digital Power Supplies High–Performance Silicon–Gate CMOS MARKING DIAGRAMS The MC74HC4316A utilizes silicon–gate CMOS technology to achieve fast propagation delays, low ON resistances, and low
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MC74HC4316A
MC74HC4316A
HC4316A
MC14016
MC14066,
HC4066A.
r14525
MC74HC4316A/D
74HC4316A
MC14066
948F
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74HC4316A
Abstract: 948F HC4066A HC4316A MC14016 MC14066 MC74HC4316A
Text: MC74HC4316A Product Preview Quad Analog Switch/ Multiplexer/Demultiplexer with Separate Analog and Digital Power Supplies http://onsemi.com High–Performance Silicon–Gate CMOS MARKING DIAGRAMS The MC74HC4316A utilizes silicon–gate CMOS technology to achieve fast propagation delays, low ON resistances, and low
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MC74HC4316A
MC74HC4316A
HC4316A
MC14016
MC14066,
HC4066A.
r14525
MC74HC4316A/D
74HC4316A
948F
HC4066A
MC14066
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Untitled
Abstract: No abstract text available
Text: LIEKKI Yb1200-6/125 – Single Mode Ytterbium Doped Fiber LIEKKITM Yb1200-6/125 fibers are highly doped single mode fibers for medium power fiber laser and amplifier applications. Their telcom-like geometry makes them compatible with many fiber based components like fiber gratings and combiners. They are ideal fibers for low-cost marking lasers and
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Yb1200-6/125
Yb1200-6/125
Yb1200-6/125DC)
Yb1200-6/125DC-PM)
0E-04
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MARKING a1n
Abstract: K145 marking CB-115 A1N4148 4148d marking K145 1N3600 3604 CB145
Text: ACTIVE COMPONENTS FOR HYBRID CIRCUITS COMPOSANTS AC TIF S POUR CIRCUITS H YBRIDES CB-145 CB-115 TM -3 Planar silicon diodes Typa Type Marking Marquage Diodes planar au silicium Pin conf. Brochage VR (V) 'o (mA) ♦ VF (V) / / 'F (mA) max / 'r ' (iJA) / VR
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CB-115
CB-145
CB-145
A1N914
MARKING a1n
K145 marking
A1N4148
4148d
marking K145
1N3600
3604
CB145
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q406 transistor
Abstract: nf 820 transistor q406 q406 transistor data
Text: SN 7000 I nf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ybs SN 7000 60 V Type SN 7000 SN 7000 Ordering Code Q62702-S638 Q62702-S637 0.25 A ^DS(on) Package Marking 5Q
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Q62702-S638
Q62702-S637
E6288
E6296
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
q406 transistor
nf 820
transistor q406
q406 transistor data
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sot marking code ZS
Abstract: Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M
Text: NPN Silicon RF Transistor BFR 106 • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code
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OT-23
sot marking code ZS
Transistor BFR
MARKING CODE R7 RF TRANSISTOR
sot-23 npn marking code VD
BFR106
Transistor BFR 30
sot-23 M
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SIEMENS BST 68
Abstract: SIEMENS BST 68 L
Text: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
Q62702-F1577
OT-343
H35b05
BFP193W
fl53SbOS
SIEMENS BST 68
SIEMENS BST 68 L
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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900MHz
Q62702-F1501
OT-343
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Untitled
Abstract: No abstract text available
Text: 32E ]> • 623 3350 0Qlb747 Q « S I P NPN Silicon RF Transistor T - *51- 17 BF 599 SIEMENS/ SPCLi SEMICONDS_ • Suitable for common emitter RF, IF amplifiers • Low collector-base capacitance due to contact shield diffusion Type Marking
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0Qlb747
Q62702-F550
Q62702-F979
T-31-17
23b320
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BFQ64
Abstract: No abstract text available
Text: NPN Silicon RF Transistor BFQ64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. Type Marking Ordering code tape and reel Package BFQ64 FC Q 62702 - F 1 061 SOT-89 Maximum Ratings
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BFQ64
OT-89
BFQ64
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TRANSISTOR MARKING YB
Abstract: sot36 3904P marking code Yb Transistor 70 sot3-6
Text: SIEMENS SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package -Q - Marking on SOT-3 6 3 package (for example W1sj
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3904PN
Q62702-C
OT-363
3904PN
TRANSISTOR MARKING YB
sot36
3904P
marking code Yb Transistor
70 sot3-6
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2907a
Abstract: 2907 A2907 a 2907 BT2907A NPN transistors sot-23 26
Text: SIEMENS PNP Silicon Switching Transistors SMBT 2907 SMBT 2907 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2222, SMBT 2222 A NPN Type Marking Ordering Code (tape and reel) Pin Configuration
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Q68000-A6501
Q68000-A6474
OT-23
EHP0075I
2907a
2907
A2907
a 2907
BT2907A
NPN transistors sot-23 26
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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Q62702-F1382
OT-143
235bQ5
BFP183
900MHz
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