MARKING YB Search Results

marking YB

Abstract: YB MARKING KRC822U
Contextual Info: SEMICONDUCTOR KRC822U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking YB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark YB KRC822U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRC822E

Contextual Info: SEMICONDUCTOR KRC822E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking YB 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark YB KRC822E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 3 2 1 2 1 MARKING SOT-323 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage

BAT54CWT1G

Abstract: BAT54SWT1G
Contextual Info: BAT54SWT1G/BAT54CWT1G Schottky Diodes Connection Diagram BAT54SWT1G 3 BAT54CWT1G 3 1 2 3 2 1 MARKING SOT-323 2 1 BAT54SWT1G = YB BAT54CWT1G = YC Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage

MARKING a1n

Abstract: K145 marking CB-115 A1N4148 4148d marking K145 1N3600 3604 CB145
Contextual Info: ACTIVE COMPONENTS FOR HYBRID CIRCUITS COMPOSANTS AC TIF S POUR CIRCUITS H YBRIDES CB-145 CB-115 TM -3 Planar silicon diodes Typa Type Marking Marquage Diodes planar au silicium Pin conf. Brochage VR (V) 'o (mA) ♦ VF (V) / / 'F (mA) max / 'r ' (iJA) / VR

q406 transistor

Abstract: nf 820 transistor q406 q406 transistor data
Contextual Info: SN 7000 I nf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ybs SN 7000 60 V Type SN 7000 SN 7000 Ordering Code Q62702-S638 Q62702-S637 0.25 A ^DS(on) Package Marking 5Q

sot marking code ZS

Abstract: Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M
Contextual Info: NPN Silicon RF Transistor BFR 106 • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code

capacitive touch sensor pcb guideline

Abstract: ticomel transformer electronic passive components catalog EN132400 znr 10k varistor s241000 5500.206 "SCHURTER" "Catalogue"
Contextual Info: Product Group Catalog EMC Products www.schurter.com/emc 1-Phase Line Filters  www.schurter.com > summary Intro Information 4 1-phase line filters Keyword Index Product Datasheets 6 6 12 General Product Information Product Standard / Definitions / CE-Marking / Conformity

schottky diode cross reference

Abstract: FYV0203DSMTF FAIRCHILD DIODE
Contextual Info: FYV0203S/DN/DP/DS FYV0203S/DN/DP/DS Connection Diagram 3 3 3 3 YB1 1 2 1 SOT-23 2 1 FYV0203DP 2 3 3 1 FYV0203DN 2 1 FYV0203DS 2 Marking FYV0203S = YB1 FYV0203DN = YB2 1 FYV0203S FYV0203DP = YB3 FYV0203DS = YB4 Schottky Diode Absolute Maximum Ratings TA=25°°C unless otherwise noted

Contextual Info: FYV0203S/DN/DP/DS FYV0203S/DN/DP/DS Connection Diagram 3 3 3 3 YB1 1 2 1 SOT-23 2 1 FYV0203DP 2 3 3 1 FYV0203DN 2 1 FYV0203DS 2 Marking FYV0203S = YB1 FYV0203DN = YB2 1 FYV0203S FYV0203DP = YB3 FYV0203DS = YB4 Schottky Diode Absolute Maximum Ratings TA=25°°C unless otherwise noted

FYV0203DN

Abstract: FYV0203DP FYV0203DS FYV0203S
Contextual Info: FYV0203S/DN/DP/DS FYV0203S/DN/DP/DS Connection Diagram 3 3 3 3 YB1 1 2 1 SOT-23 2 1 FYV0203DP 2 3 3 1 FYV0203DN 2 1 FYV0203DS 2 Marking FYV0203S = YB1 FYV0203DN = YB2 1 FYV0203S FYV0203DP = YB3 FYV0203DS = YB4 Schottky Diode Absolute Maximum Ratings TA=25°°C unless otherwise noted

74HC4316A

Abstract: 948F HC4066A HC4316A MC14016 MC14066 MC74HC4316A
Contextual Info: MC74HC4316A Product Preview Quad Analog Switch/ Multiplexer/Demultiplexer with Separate Analog and Digital Power Supplies http://onsemi.com High–Performance Silicon–Gate CMOS MARKING DIAGRAMS The MC74HC4316A utilizes silicon–gate CMOS technology to achieve fast propagation delays, low ON resistances, and low

SIEMENS BST 68

Abstract: SIEMENS BST 68 L
Contextual Info: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: SIEMENS BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

Contextual Info: LIEKKI Yb1200-6/125 – Single Mode Ytterbium Doped Fiber LIEKKITM Yb1200-6/125 fibers are highly doped single mode fibers for medium power fiber laser and amplifier applications. Their telcom-like geometry makes them compatible with many fiber based components like fiber gratings and combiners. They are ideal fibers for low-cost marking lasers and

Contextual Info: 32E ]> • 623 3350 0Qlb747 Q « S I P NPN Silicon RF Transistor T - *51- 17 BF 599 SIEMENS/ SPCLi SEMICONDS_ • Suitable for common emitter RF, IF amplifiers • Low collector-base capacitance due to contact shield diffusion Type Marking

BFQ64

Contextual Info: NPN Silicon RF Transistor BFQ64 • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 70 to 150 mA. Type Marking Ordering code tape and reel Package BFQ64 FC Q 62702 - F 1 061 SOT-89 Maximum Ratings

TRANSISTOR MARKING YB

Abstract: sot36 3904P marking code Yb Transistor 70 sot3-6
Contextual Info: SIEMENS SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package -Q - Marking on SOT-3 6 3 package (for example W1sj

77V106

Abstract: 77V107 YB device marking Code
Contextual Info: 77V107 Device Errata Notes Supplemental Information The revision/die stepping of the 77V107 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 77V107 L25TF <\\ZZF Revision/Stepping

2907a

Abstract: 2907 A2907 a 2907 BT2907A NPN transistors sot-23 26
Contextual Info: SIEMENS PNP Silicon Switching Transistors SMBT 2907 SMBT 2907 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2222, SMBT 2222 A NPN Type Marking Ordering Code (tape and reel) Pin Configuration

Contextual Info: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code