MARKING Z2 5 Search Results

marking code z2

Contextual Info: SDZ5V1Q Semiconductor Zener Diode Features • Compact type • Radiation size 1.25mm x 1.7mm • Surface mount lead configuration Ordering Information Type NO. Marking Package Code SDZ5V1Q Z2 SOD-523 Outline Dimensions unit : mm 0.70~0.90 0.32 Max. 1.50~1.70

ksd2043

Contextual Info: SDZ5V1F Semiconductor Zener Diode Features • Compact type • Radiation size 1.6mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ5V1F Marking Package Code Z2 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC

Contextual Info: SDZ5V1 Semiconductor Zener Diode Features • Compact type • Radiation size 1.3mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. Marking SDZ5V1 Package Code Z2 SOT-23 Outline Dimensions unit : mm 2.20~2.60 1.20~1.40 2.80~3.00

Contextual Info: SDZ5V1F Semiconductor Zener Diode Features • Compact type • Radiation size 1.6mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. Marking SDZ5V1F Package Code Z2 SOT-23F Outline Dimensions unit : mm 2.30~2.50 1.50~1.70 1.90 Typ.

marking code z2

Contextual Info: SDZ5V1D Semiconductor Zener Diode Features • Compact type • Radiation size 1.25mm x 1.7mm • Surface mount lead configuration Ordering Information Type NO. Marking Package Code SDZ5V1D Z2 SOD-323 Outline Dimensions unit : mm 1.15~1.35 0.35 Max. 2.35~2.65

marking Z2 sot23

Abstract: ksd2008
Contextual Info: SDZ5V1 Semiconductor Zener Diode Features • Compact type • Radiation size 1.3mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ5V1 Marking Package Code Z2 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 3 2.9±0.1

SDZ5V1D

Abstract: transistor C013 marking code z2
Contextual Info: SDZ5V1D Semiconductor Zener Diode Features • Compact type • Radiation size 1.25mm x 1.7mm • Surface mount lead configuration Ordering Information Type NO. Marking Package Code SDZ5V1D Z2 SOD-323 unit : mm 1.25±0.1 0.3~0.35 Outline Dimensions 2.5±0.1

Contextual Info: KL SMD TSS KL SERIES OUTLINE DIMENSIONS KL3Z18 1.5 00 Z2 18V30A 2.5 Package : 1F ロット記号（例） 品名 クラス（略号） 1.2 1.2 0.1 2.0 0.2 0.9 5.0 単位：mm Web For details of outline dimensions, refer to our web site or the Semiconductor Short Form Catalog. As for the marking, refer to

1AZ22

Contextual Info: CF High Inrush Rocker Switches  CF-LA UL cULus ENEC 1. High inrush rocker switches 2. Inrush 160A max. 3. Five kinds of terminal style 4. Dust proof type㸦㹇㹎40㸧 5. cULus, UL 㸦TV-8㸧 , and ENEC listed. cULusUL E43275 ENEC SE/05105-04 16A125V AC or 16A250V AC Resistive load

IC t148

Abstract: IMZ2A marking Y4 2SA1037AK 2SC2412K T108 T148 marking code z2
Contextual Info: EMZ2 / UMZ2N / FMY4A / IMZ2A Transistors Power management dual transistors EMZ2 / UMZ2N / FMY4A / IMZ2A !External dimensions (Units : mm) (3) (4) (5) (2) (6) UMZ2N (1) 0.2 (5) (1) (6) (4) 1.25 2.0 (2) 1.3 (3) Tr1 (3) (6) Each lead has same dimensions ROHM : EMT6

2sc2412k smt6

Abstract: 2SA1037AK 2SC2412K T108 T148 marking code z2 EMT 015
Contextual Info: EMZ2 / UMZ2N / FMY4A / IMZ2A Transistors Power management dual transistors EMZ2 / UMZ2N / FMY4A / IMZ2A !External dimensions (Units : mm) (3) (4) (5) (2) (6) 0.5 IMZ2A (4) (5) (6) Each lead has same dimensions ROHM : EMT6 (6) (3) (2) (1) UMZ2N (5) (5) Tr1

marking code z2

Abstract: 2SA1037AK 2SC2412K T108 T148 2SC2412 T1483
Contextual Info: EMZ2 / UMY4N / UMZ2N / FMY4A / IMZ2A Transistors Power management dual transistors EMZ2 / UMY4N / UMZ2N / FMY4A / IMZ2A zFeatures 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. zExternal dimensions (Units : mm) (3) 0.22 (4) (5)

2SC2412K

Abstract: 2SA2018 2SA20 marking code z2
Contextual Info: EMZ8 / UMZ8N Transistors Power management dual transistors EMZ8 / UMZ8N !External dimensions (Units : mm) (5) (6) (5) 0.5 1.25 (6) 2.0 1.3 (3) (1) (6) (4) 0.65 UMZ8N (2) Tr1 0.65 (1) 0.2 Tr2 Each lead has same dimensions ROHM : EMT6 EIAJ : (4) (2) (1) (5)

din 82

Abstract: DIN 82-Rge Rge 10-din 82 630 207 Souriau cross reference 8A10 AF5A
Contextual Info: souriau 8A10 Series Description Applications • Audio-miniature connectors with 10 contacts especially designed for transmission of very low current • Bayonet locking system • Solder or straight spills contacts • 5 different orientations • Sealed connector in unmated or mated

2sc2412k smt6

Abstract: umz2n 2SA1037AK 2SC2412K T108 T148
Contextual Info: EMZ2 / UMZ2N / FMY4A / IMZ2A Transistors Power management dual transistors EMZ2 / UMZ2N / FMY4A / IMZ2A !External dimensions (Units : mm) (3) (4) (5) (2) (6) 0.5 IMZ2A (4) (5) (6) Each lead has same dimensions ROHM : EMT6 (6) (3) (2) (1) UMZ2N (5) (5) Tr1

2SC2412K

Abstract: 2sc2412k smt6 2SA1037AK T108 T148
Contextual Info: UMY4N / UMZ2N / FMY4A / IMZ2A Transistors Power management dual transistors UMY4N / UMZ2N / FMY4A / IMZ2A (1) (5) 1.3 (2) 0.2 (4) UMY4N (3) !External dimensions (Units : mm) 0.65 0.65 !Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a UMT or SMT package.

4vz2

Abstract: tektronix 2201 1N6319 tektronix 4081 ci 4081 11N6 1N6309D 1N6309 44e 117 1N6309US
Contextual Info: NIL SPECS 44E D j The documentation and process conversion | measures necessary to comply with this j revision shall be completed by 21 Mar 94. l- • O G D O IE S 0 0 3 3 77 5 T «MILS i- 1 | INCH-P0UND | j | | 1

Contextual Info: r 6 3 6 7 2 5 5 M O TO RO LA S C D IO D E S / O P T O Tfi 980 78628 DE|b3b7HS5 P _ T - 0 7-/9 DOTahEâ t T -fH l SOT-23 D IO D E S (continued) Zener Diodes (continued) Pinout: 1-Anode, 2-NC, 3-Cathode VZ i Volts Vz2 Volts V Z3 Volts «1 : iz mA <Z2 1 1

Contextual Info: EMZ8 / UMZ8N Transistors Power management dual transistors EMZ8 / UMZ8N !External dimensions (Units : mm) (5) (6) (5) 0.5 1.25 (6) 2.0 1.3 (3) (1) (6) (4) 0.65 UMZ8N (2) Tr1 0.65 (1) 0.2 Tr2 Each lead has same dimensions ROHM : EMT6 EIAJ : (4) (2) (1) (5)

J293

Contextual Info: Freescale Semiconductor Technical Data MW4IC001N Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier MW4IC001NR4 The MW4IC001N wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s

567 tone

Abstract: 100B2R7CP500X 100B120JP500X 100B430JP500X 100B4R7CP500X A113 C1210C104K5RACTR MW4IC001NR4 RO4350 T491X226K035AS
Contextual Info: Freescale Semiconductor Technical Data MW4IC001N Rev. 5, 5/2006 RF LDMOS Wideband Integrated Power Amplifier MW4IC001NR4 The MW4IC001N wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s

smd transistor marking z3

Abstract: smd transistor marking j8 MOSFET marking Z4 transistor 6 pin SMD Z2 smd transistor marking z8 freescale semiconductor body marking smd transistor marking j6 Z9 TRANSISTOR SMD 465B MRF18090A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 7, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: MW4IC001MR4 Rev. 4, 5/2006 Freescale Semiconductor Technical Data Replaced by MW4IC001NR4. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MW4IC001MR4

465B

Abstract: BC847 GSM1900 LP2951 MRF18090B MRF18090BR3 MRF18090BSR3 smd transistor marking j8 smd transistor marking z8
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18090B Rev. 7, 5/2006 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier