MARKING ZZZ Search Results

R-50004425

Abstract: VLD175L
Contextual Info: CONQUER Resettable Fuses Type VLD Series Strap Battery Resettable Devices Approvals Mechanical Dimensions Agency File Numbers B SL VZZZ XXXY F UL Recognized 1.7A~2.1A TUV 1.7A~2.1A D UL E201504/E319079, TUV R-50004425 D A Electrical Characteristics C Marking

MYS 99

Abstract: STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics date code format st marking code st MYS 99 stmicroelectronics assembly site date code format LOT code stmicroelectronics marking code stmicroelectronics
Contextual Info: AN926 Application note Brand traceability Introduction To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a new marking and traceability scheme due to the sizes

RELAY OMRON G8

Abstract: RELAY OMRON G6 omron g8 Omron Electronics EN61810-1 P7SA-10F P7SA-14P g7sa wiring diagram
Contextual Info: Relays with Forcibly Guided Contacts G7SA Compact, Slim Relays Conforming to EN Standards • Relays with forcibly guided contacts EN50205 Class A, approved by VDE . • Supports the CE marking of machinery (Machinery Directive). • Helps avoid hazardous machine status when used as part of an

Contextual Info: ADVANCE MT28SF002 256K x 8 FLASH MEMORY 256K x 8 S m artV o lta g e FEATURES 40-Pin TSOP Type I FB-1 A16 A15 A14 A13 A12 A11 A9 A8 WE RP V pp WP NC A7 A6 A5 A4 A3 A2 A1 MARKING • Tim ing (5V V cr/3.3V Vcc) 60ns/90ns access -6 80ns/110ns access -8 100ns/150ns access

CSD87312Q3E

Contextual Info: CSD87312Q3E www.ti.com SLPS333 – NOVEMBER 2012 Dual 30-V N-Channel NexFET Power MOSFETs FEATURES . 1 • • • • • • Common Source Connection  ZZZWLFRP Ultra Low Drain to Drain On-Resistance Space Saving SON 3.3 x 3.3mm Plastic Package  Optimized

g311p

Abstract: GSFC 741 national G-311-P MIL-R-39032
Contextual Info: ~ ~ .- ~~~ 99999b3 0009856 620 REVISIONS I I DATE DES CRI PT ION SYMBOL z i zzz -`,```,``,`,``,-`-`,`,`,`,`- - APPROVAL I SHEET REVISION STATUS 3 .?A ORIGINATOR 7 T.J. Perry/Unisys CODE 311 APPROV A. T. Mecum/GSFC FSC: 5905 .5-8 - y/ Resistor, Fixed, Low TC

Contextual Info: n 213 li 11 N o te 4 ¡ i - 2 *-| I Bu. Vf s ilO ' Table 1 Partnumber composition table P/N 99207— X YY ZZZ X YY ZZZ S 9 /1 2 5 sinale mode M 5 0 /1 2 5 multi mode N 6 2 .5 /1 2 5 multi mode 30 ZO 3R ZR 3 2 3 2 mm mm mm mm LSZH LSZH OFNR OFNR jacketed iacketed

Contextual Info: 213 ç li li Note 4 ¡ i - 2 ^-| ÏBu. íh á lsï ii ta- O ' Table 1 Partnumber composition table P/N 9921Z -X YY ZZZ X YY ZZZ S 9 /1 2 5 sinqle mode 30 Z0 3R 2R £ 3 2 3 2 mm mm mm mm LSZH LSZH OFNR OFNR Jacketed iacketed jacketed iacketed ZZZ Length "L" in meters, decimal by placing X e.g. 3X5= 3,5 m

Videx

Abstract: 99209
Contextual Info: ç 213 li li N o te 4 ¡ i - 2 ^-| ÏBu. íh á lsï ii taO ' Table 1 Partnumber composition table P/N 99209—X YY ZZZ X YY ZZZ S 9 /1 2 5 sinqle mode 30 ZO 3R 2R âû £ 3 2 3 2 mm mm mm mm 9 0 0 um LSZH LSZH OFNR OFNR Jacketed iacketed ja cke te d iacketed

MD2811-D32-V3

Abstract: MD2811-D32 M-Systems diskonchip MD-2811-D32-V3 MD2811-D16-V3Q18 MD2811 Diskonchip Diskonchip Millennium Plus marking 002 Millennium
Contextual Info: Product Update PU2302 July 31, 2002 New Assembly Site for DiskOnChip TSOP Products Description The DiskOnChip products listed below, which are manufactured by Toshiba, will be assembled in the new Toshiba facility in Taiwan starting at the end of July. As a result of this change, the product markings and the package

MYS 99

Abstract: STMicroelectronics date code format STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics marking code AN926 STMicroelectronics marking code date diode soic date code stmicroelectronics INTEGRATED CIRCUIT DATE code stmicroelectronics
Contextual Info: AN926 APPLICATION NOTE Brand Traceability with for NVRAM Products INTRODUCTION To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a

military relay

Abstract: BGA-3000 AN-1112 LMC6035 LMC6035IBP LMC6035IBPX Lay out of 10 Bump Micro smd package CD laser pickup assembly
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MARKING CODE VARISTOR

Abstract: E314979 TVA32951 TVA32471 metal oxide varistor KC TVA32122 varistor 101 k TVA40102
Contextual Info: Metal Oxide Varistor：TVA Series Disc/Block Type Varistor for Lightning Protection  Features 1. 2. 3. 4. 5. 6. 7. 8. 9. RoHS compliant Halogen-free series are available Body size: Ф25mm ~ Ф 60mm Wide operating voltage range Excellent clamping ratio Bidirectional and symmetrical V/I characteristics

MARKING CODE VARISTOR

Abstract: TVA40751K TVA25471 TVA32911 tva25431 TVA32471 IEC61643-1 420 varistor TVA34271 TVA40751
Contextual Info: Metal Oxide Varistor：TVA Series Disc/Block Type Varistor for Lightning Protection  Features 1. 2. 3. 4. 5. 6. 7. 8. 9. RoHS compliant Halogen-free series are available Body size: Ф25mm ~ Ф 60mm Wide operating voltage range Excellent clamping ratio Bidirectional and symmetrical V/I characteristics

Contextual Info: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%

STAC4932

Abstract: STAC4932B 1715-3
Contextual Info: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10% ■ In compliance with the 2002/95/EC European

Contextual Info: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz • POUT = 200 W min. (250 W typ.) with 16 dB gain @ 860 MHz

Contextual Info: STAC4932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz • Pulse conditions: 1 msec - 10%

P-DSOSP-14-6

Abstract: pressure sensor sp30 infineon pressure sensor ww dok infineon pressure sensor SP000435430 JESD22-B102-C tire pressure sensor SP30 tire pressure kkjw
Contextual Info: Datasheet TS Rev. Page of Tire Pressure Monitoring Sensor SP30 Datasheet Tire Pressure Monitoring Sensor SP30 Revisions dates: 00 2003-01-03 1 2004-01-15 2 2005-11-25 3 2006-03-03 4 2008-08-29 5 2009-06-30 Document history: See end of document Date Sign Rev

STAC3932

Abstract: STAC3932B STAC244B
Contextual Info: STAC3932B HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description

Contextual Info: STAC3932B HF/VHF/UHF RF power N-channel MOSFET Datasheet - production data Features • Excellent thermal stability • Common source push-pull configuration • POUT = 580 W typ. with 24.6 dB gain @ 123 MHz • In compliance with the 2002/95/EC European directive

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Contextual Info: Sensor Terminal Blocks, for 3-Conductor Sensors with Ground Earth Connection 0 .0 8 - 2.5 mm2 4 0 0 V / 6 k V /3 O 20 A A W G 2 8 - 12 3 0 0 V, 15 A TO 3 0 0 V, 15 A « Terminal block w idth 5 mm / 0.197 in - 9 mm / 0 .3 3 in 4 _8 0 .0 8 — 2.5 mm2

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