MARKINGS 2N7002 Search Results
MARKINGS 2N7002 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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54HC221AJ/883C |
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54HC221AJ/883C - Dual marked (5962-8780502EA) |
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54ACT157/VFA-R |
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54ACT157/VFA-R - Dual marked (5962R8968801VFA) |
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54LS37/BCA |
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54LS37/BCA - Dual marked (M38510/30202BCA) |
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MG8097/B |
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8097 - Math Coprocessor - Dual marked (8506301ZA) |
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MARKINGS 2N7002 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2N7002KContextual Info: SPICE Device Model 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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2N7002K 18-Jul-08 2N7002K | |
2N7002EContextual Info: SPICE Device Model 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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2N7002E 18-Jul-08 2N7002E | |
2N7002EWContextual Info: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage |
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2N7002E O-236 OT-23) 2N7002E 18-Jul-08 2N7002EW | |
Contextual Info: SPICE Device Model 2N7002K www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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2N7002K 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
2N7002E-T1-E3
Abstract: 2N7002E-T1-GE3 2N7002E marking 2N7002E-T1-E3
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2N7002E O-236 OT-23) 2N7002E-T1-E3 18-Jul-08 2N7002E-T1-E3 2N7002E-T1-GE3 2N7002E marking 2N7002E-T1-E3 | |
marking 2N7002E-T1-E3
Abstract: sot 23 marking code 7e 2N7002E siliconix 2N7002E-T1-E3
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2N7002E 2002/95/EC O-236 OT-23) 18-Jul-08 marking 2N7002E-T1-E3 sot 23 marking code 7e 2N7002E siliconix 2N7002E-T1-E3 | |
Contextual Info: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage |
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2N7002VC/VAC AEC-Q101 OT563 J-STD-020 MIL-STD-202, DS30639 | |
diodes code va
Abstract: VA MARKING
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2N7002VC/VAC 2N7002V/VA AEC-Q101 OT-563 OT-563 J-STD-020D DS30448 diodes code va VA MARKING | |
2N7002KContextual Info: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 • Low On-Resistance: 2 Ω Pb-free • Low Threshold: 2 V (typ.) Available • Low Input Capacitance: 25 pF RoHS* • Fast Switching Speed: 25 ns |
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2N7002K O-236 OT-23 18-Jul-08 2N7002K | |
Contextual Info: 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (mA) 60 2 at VGS = 10 V 300 • Halogen-free According to IEC 61249-2-21 Available • Low On-Resistance: 2 Ω • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF |
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2N7002K O-236 OT-23 2N7002K-T1 2N7002K-T1-E3 2N7002K-T1-GE3 18-Jul-08 | |
2N7002E
Abstract: 2N7002E-7-F
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2N7002E OT-23 J-STD-020 MIL-STD-202, DS30376 2N7002E 2N7002E-7-F | |
2N7002E-T1-E3
Abstract: marking code 7e marking 7E SOT-23 Diode 2N7002E 2N7002E-T1-GE3 "MARKING CODE" "7E"
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2N7002E 2002/95/EC O-236 OT-23) 2N7002E-T1-E3 2N7002E-T1-GE3 11-Mar-11 2N7002E-T1-E3 marking code 7e marking 7E SOT-23 Diode 2N7002E 2N7002E-T1-GE3 "MARKING CODE" "7E" | |
2N7002KQ-7
Abstract: k7k sot-23 sot-23 Marking k7k 2N7002K-7 2N7002K-2 2N7002K K7K
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2N7002K AEC-Q101 OT-23 J-STD-020 MIL-STD-202, OT-23 DS30896 2N7002KQ-7 k7k sot-23 sot-23 Marking k7k 2N7002K-7 2N7002K-2 2N7002K K7K | |
k72 transistor
Abstract: k72 transistor surface mount 2N7002DW 2N7002DW-7-F
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2N7002DW AEC-Q101 OT-363 J-STD-020 MIL-STD-202, DS30120 k72 transistor k72 transistor surface mount 2N7002DW 2N7002DW-7-F | |
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2N7002KQ-13
Abstract: 2N7002KQ-7
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2N7002K AEC-Q101 J-STD-020 MIL-STD-202, DS30896 2N7002KQ-13 2N7002KQ-7 | |
Contextual Info: 2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • Mechanical Data • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package |
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2N7002A AEC-Q101 OT-23 OT-23 J-STD-020D MIL-STD-202, DS31360 | |
2N7002K-T1-E3
Abstract: 2N7002K-T1-GE3 2N7002K-T1 2N7002K-T1 Vishay 2n7002k 7k 2N7002K
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2N7002K O-236 OT-23 2002/95/EC 2N7002K-T1 2N7002K-T1-E3lectual 18-Jul-08 2N7002K-T1-E3 2N7002K-T1-GE3 2N7002K-T1 2N7002K-T1 Vishay 2n7002k 7k 2N7002K | |
DS30120 Rev. 13Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage |
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2N7002DW AEC-Q101 OT363 J-STD-020 MIL-STD-202, DS30120 DS30120 Rev. 13 | |
sot-23 Marking k7k
Abstract: 2N7002K k7k sot-23 2N7002K-7 2N7002K K7K
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2N7002K AEC-Q101 OT-23 J-STD-020 MIL-STD-202, DS30896 sot-23 Marking k7k 2N7002K k7k sot-23 2N7002K-7 2N7002K K7K | |
Contextual Info: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET N EW PRODU CT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage |
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2N7002VC/VAC AEC-Q101 OT563 J-STD-020 DS30639 | |
Contextual Info: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Features Mechanical Data • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package |
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2N7002VC/VAC AEC-Q101 OT563 J-STD-020 DS30639 | |
k72 diode
Abstract: mosfet k72 K72 marking diode DS30120 Rev. 14
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2N7002DW AEC-Q101 DS30120 k72 diode mosfet k72 K72 marking diode DS30120 Rev. 14 | |
k72 transistor sot 23Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 2 |
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2N7002 AEC-Q101 OT-23 J-STD-020 MIL-STD-202, DS11303 k72 transistor sot 23 | |
Contextual Info: 2N7002T N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) ID TA = 25°C 60V 7.5Ω @ VGS = 5V 115mA • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage |
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2N7002T 115mA AEC-Q101 DS30301 |