depletion MOSFET
Abstract: ultra low igss pA depletion mode power mosfet ALD110900 Epad Product ALD110800 ALD114804 ALD114813 ALD114835 n channel depletion MOSFET
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY GENERAL DESCRIPTION ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s
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ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx
ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx
depletion MOSFET
ultra low igss pA
depletion mode power mosfet
ALD110900
Epad Product
ALD110800
ALD114804
ALD114813
ALD114835
n channel depletion MOSFET
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Dual Gate MOSFET graphs
Abstract: ALD1148xx
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D PERFORMANCE CHARACTERISTICS OF EPAD® PRECISION MATCHED PAIR MOSFET FAMILY GENERAL DESCRIPTION ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are high precision monolithic quad/dual N-Channel MOSFETs matched at the factory
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ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx
Dual Gate MOSFET graphs
ALD1148xx
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PAL 0007 E MOSFET
Abstract: PAL 007 E MOSFET ALD110900A ALD110900 ALD110900PAL depletion mode power mosfet ALD110900SAL ALD110900ASAL ALD110800SCL ultra low igss pA
Text: e ADVANCED LINEAR DEVICES, INC. EN FEATURES ALD110800A/ALD110800/ALD110900A/ALD110900 are monolithic quad/ dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS technology. These devices are members of the EPAD Matched Pair MOSFET Family.
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ALD110800/ALD110800A/ALD110900/ALD110900A
ALD110800A/ALD110800/ALD110900A/ALD110900
PAL 0007 E MOSFET
PAL 007 E MOSFET
ALD110900A
ALD110900
ALD110900PAL
depletion mode power mosfet
ALD110900SAL
ALD110900ASAL
ALD110800SCL
ultra low igss pA
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zero crossing detector ic with 90v
Abstract: ald110800 ALD110900A ALD110800A ALD110800APCL
Text: e ADVANCED LINEAR DEVICES, INC. EN FEATURES ALD110800A/ALD110800/ALD110900A/ALD110900 are high precision monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD CMOS technology. These devices are members of the EPAD Matched Pair MOSFET Family.
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ALD110800/ALD110800A/ALD110900/ALD110900A
ALD110800A/ALD110800/ALD110900A/ALD110900
ALD110800/
ALD110900
sign010
zero crossing detector ic with 90v
ald110800
ALD110900A
ALD110800A
ALD110800APCL
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parallel connection of MOSFETs
Abstract: ultra low igss pA ALD110800 ALD110814 ALD110814PCL ALD110814SCL ALD110914 ALD110914PAL ALD110914SAL ALD114804
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110814/ALD110914 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +1.40V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110814/ALD110914 are monolithic quad/dual enhancement mode NChannel MOSFETs matched at the factory using ALD’s proven EPAD®
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ALD110814/ALD110914
ALD110814/ALD110914
parallel connection of MOSFETs
ultra low igss pA
ALD110800
ALD110814
ALD110814PCL
ALD110814SCL
ALD110914
ALD110914PAL
ALD110914SAL
ALD114804
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110814/ALD110914 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +1.40V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110814/ALD110914 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETs matched at the factory using ALD’s
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ALD110814/ALD110914
ALD110814/ALD110914
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110804/ALD110904 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +0.40V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110804/ALD110904 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s
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ALD110804/ALD110904
ALD110804/ALD110904
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depletion mode power mosfet
Abstract: 185uA ultra low igss pA
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110804/ALD110904 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +0.40V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110804/ALD110904 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s
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ALD110804/ALD110904
ALD110804/ALD110904
depletion mode power mosfet
185uA
ultra low igss pA
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PAL 0007 E MOSFET
Abstract: Amp. mosfet 1000 watt PAL 007 c PAL 007 E MOSFET ultra low igss pA ALD110800 ALD110802 ALD110802PCL ALD110802SCL ALD110902PAL
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110802/ALD110902 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +0.20V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110802/ALD110902 are monolithic quad/dual enhancement mode NChannel MOSFETS matched at the factory using ALD’s proven EPAD®
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ALD110802/ALD110902
ALD110802/ALD110902
PAL 0007 E MOSFET
Amp. mosfet 1000 watt
PAL 007 c
PAL 007 E MOSFET
ultra low igss pA
ALD110800
ALD110802
ALD110802PCL
ALD110802SCL
ALD110902PAL
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110802/ALD110902 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +0.20V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110802/ALD110902 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s
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ALD110802/ALD110902
ALD110802/ALD110902
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Amp. mosfet 1000 watt
Abstract: PAL 007 a MOSFET PAL 007 E MOSFET ultra low igss pA ALD110800 ALD110804 ALD110804PCL ALD110804SCL ALD110904 ALD110904PAL
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110804/ALD110904 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +0.40V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110804/ALD110904 are monolithic quad/dual enhancement mode NChannel MOSFETS matched at the factory using ALD’s proven EPAD®
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ALD110804/ALD110904
ALD110804/ALD110904
Amp. mosfet 1000 watt
PAL 007 a MOSFET
PAL 007 E MOSFET
ultra low igss pA
ALD110800
ALD110804
ALD110804PCL
ALD110804SCL
ALD110904
ALD110904PAL
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parallel connection of MOSFETs
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110814/ALD110914 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +1.40V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110814/ALD110914 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETs matched at the factory using ALD’s
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ALD110814/ALD110914
ALD110814/ALD110914
parallel connection of MOSFETs
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epad
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110802/ALD110902 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +0.20V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110802/ALD110902 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s
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ALD110802/ALD110902
ALD110802/ALD110902
epad
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nte461
Abstract: matched pair JFET N-Channel JFET transistor jfet transistor
Text: NTE461 Silicon N−Channel JFET Transistor Dual, Matched Pair DC Amp/Sampler/Chopper Features: D High Input Impedance: IG < 50pA D Minimum System Error and Calibrations D TO−71 Case Style Absolute Maximum Ratings: Gate Drain or Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −50V
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NTE461
250mW
nte461
matched pair JFET
N-Channel JFET transistor
jfet transistor
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD210800/ALD210800A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V QUAD HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ALD210800A/ALD210800 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These
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ALD210800/ALD210800A
ALD210800A/ALD210800
ALD110800A/ALD110800
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD212900/ALD212900A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V DUAL HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ® ALD212900A/ALD212900 precision N-Channel EPAD MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These
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ALD212900/ALD212900A
ALD212900A/ALD212900
ALD110900A/ALD110900
ALD212900A/
ALD212900
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD212900/ALD212900A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V DUAL HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ® ALD212900A/ALD212900 precision N-Channel EPAD MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These
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ALD212900/ALD212900A
ALD212900A/ALD212900
ALD110900A/ALD110900
ALD212900A/
ALD212900
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Untitled
Abstract: No abstract text available
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD210800/ALD210800A PRECISION N-CHANNEL EPAD® MOSFET ARRAY VGS th = +0.00V QUAD HIGH DRIVE ZERO THRESHOLD MATCHED PAIR GENERAL DESCRIPTION FEATURES & BENEFITS ALD210800A/ALD210800 precision N-Channel EPAD® MOSFET array is precision matched at the factory using ALD’s proven EPAD® CMOS technology. These
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ALD210800/ALD210800A
ALD210800A/ALD210800
ALD110800A/ALD110800
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mosfet low vgs
Abstract: ultra low igss pA ALD110808 ALD110808APCL ALD110808ASCL ALD110808PCL ALD110808SCL ALD110908 ALD110908APAL ALD110908ASAL
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110808/ALD110808A/ALD110908/ALD110908A QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +0.80V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110808A/ALD110808/ALD110908A/ALD110908 are monolithic quad/
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ALD110808/ALD110808A/ALD110908/ALD110908A
ALD110808A/ALD110808/ALD110908A/ALD110908
mosfet low vgs
ultra low igss pA
ALD110808
ALD110808APCL
ALD110808ASCL
ALD110808PCL
ALD110808SCL
ALD110908
ALD110908APAL
ALD110908ASAL
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ultra low igss pA
Abstract: ALD110800 depletion MOSFET Depletion-Mode MOSFET N-Channel Depletion-Mode MOSFET ALD114804 ALD114835 ALD114835PCL ALD114835SCL ALD114935
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD114835/ALD114935 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® VGS th = -3.50V MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD114835/ALD114935 are monolithic quad/dual depletion mode N-Channel
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ALD114835/ALD114935
ALD114835/ALD114935
ultra low igss pA
ALD110800
depletion MOSFET
Depletion-Mode MOSFET
N-Channel Depletion-Mode MOSFET
ALD114804
ALD114835
ALD114835PCL
ALD114835SCL
ALD114935
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PAL 0007 E MOSFET
Abstract: ALD1108
Text: e ADVANCED LINEAR DEVICES, INC. TM EPAD EN AB LE D ALD110808/ALD110808A/ALD110908/ALD110908A QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® VGS th = +0.80V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110808A/ALD110808/ALD110908A/ALD110908 are high precision
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ALD110808A/ALD110808/ALD110908A/ALD110908
PAL 0007 E MOSFET
ALD1108
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ALD114904ASAL
Abstract: No abstract text available
Text: ADVANCED LINEAR DEVICES, INC. TM e EPAD D LE AB EN ALD114804/ALD114804A/ALD114904/ALD114904A QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY VGS th = -0.40V GENERAL DESCRIPTION APPLICATIONS ALD114804/ALD114804A/ALD114904/ALD114904A are high precision monolithic
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ALD114804/ALD114804A/ALD114904/ALD114904A
characteris010
ALD114904ASAL
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Untitled
Abstract: No abstract text available
Text: NCBD1 DIE N-Channel JFET Pair CT*S ilico n ix JL w The NCBD1 Die is a matched pair of JFETs. This two-chip design reduces parasitic performance at high frequency while ensuring extremely tight matching. The die features high breakdown voltage V(br gss typically
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OCR Scan
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MIL-STD-750C,
2N5566
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U440
Abstract: JFET Matched
Text: NZFD1 DIE N-Channel JFETs C3TSiliconix J L J r incorporated The NZFD1 Die is a JFET matched pair. This two-chip design reduces high-frequency matching. parasitic while The NZFD1 ensuring performance extremely NZFD1CHP* at tight 2N5912 U440 U441 Die features high speed
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OCR Scan
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2N5912
MIL-STD-750C,
U440
JFET Matched
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