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    MATRA MHS 28 PINS Search Results

    MATRA MHS 28 PINS Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    MG80C196KB
    Rochester Electronics LLC 80C196KB - Microcontroller, 16-bit, MCS-96, 68-pin Pin Grid Array (PGA) Visit Rochester Electronics LLC Buy
    PAL16L8B-4MJ/BV
    Rochester Electronics LLC PAL16L8B - 20 Pin TTL Programmable Array Logic Visit Rochester Electronics LLC Buy
    PAL16L8-7PCS
    Rochester Electronics LLC PAL16L8 - 20-Pin TTL Programmable Array Logic Visit Rochester Electronics LLC Buy
    54F191/Q2A
    Rochester Electronics LLC 54F191 - Up/Down Binary Counter with Preset and Ripple Clock. Dual marked as DLA PIN 5962-90582012A. Visit Rochester Electronics LLC

    MATRA MHS 28 PINS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Code DP

    Contextual Info: Packages Flat Pack package outlines 24 pins Flat Pack 500 mils Code : D Date : 21–07–92 28 pins Flat Pack (400 mils) Code : DP MATRA MHS Date : 15–04–97 1 Packages 32 pins Flat Pack (400 mils) Code : DJ 2 Date : 04–09–96 MATRA MHS


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    CERDIP 28 PINS

    Abstract: CODE 1P MATRA MHS code 1k CERDIP 48 PINS
    Contextual Info: Packages Ceramic Dual In Line package outlines 22 pins CERDIP 300 mils Code : 1S Date : 28–04–97 24 pins CERDIP (300 mils) Code : 1Z MATRA MHS Date : 29–06–94 1 Packages 28 pins CERDIP (300 mils) Code : 1P Date : 23–04–97 28 pins CERDIP (600 mils)


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    MATRA MHS

    Abstract: 400mils MATRA MHS 28 pins
    Contextual Info: Packages Side Braze package outlines 22 pins Side Braze 300 mils Code : CS Date : 22–11–96 24 pins Side Braze (300 mils) Code : CZ MATRA MHS Date : 14–06–94 1 Packages 28 pins Side Braze (300 mils) Code : CP Date : 14–06–94 28 pins Side Braze (600 mils)


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    SMD-5962-38294

    Contextual Info: L 65764 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 x 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip select CS1 , an active high chip select (CS2), an active


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    SMD5962 SMD-5962-38294 PDF

    F 10 L 600

    Abstract: DIL 330 65764 z1015
    Contextual Info: L 65764 MATRA MHS 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 × 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip


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    80C51PX

    Abstract: 80C51P16 MATRA MHS 80c51p32
    Contextual Info: Tem ic 80C51PX MATRA MHS CMOS Piggy Back for MHS 80C51/C52/C154/C154D Introduction The MHS 80C51PX are piggy back devices for all the MHS microcontrollers 80C51, 80C52, 83C154 and 83C154D. of software can be evaluated and the optimum solution found by using real time evaluation and by reducing the


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    80C51PX 80C51/C52/C154/C154D 80C51PX 80C51, 80C52, 83C154 83C154D. 80C51P 80C51P: 80C51P16 MATRA MHS 80c51p32 PDF

    65664

    Abstract: MATRA MHS 65664a MATRA MHS HM S92A
    Contextual Info: HM 65664A MATRA MHS 8 K x 8 Ultimate CMOS SRAM Description The HM 65664A is a very low power CMOS static RAM organized as 8192 × 8 bit. It is manufactured using the MHS high performance CMOS technology named super CMOS. current typical value = 0.1 µA with a fast access time at


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    5664A 5664A 65664 MATRA MHS 65664a MATRA MHS HM S92A PDF

    M65608

    Contextual Info: M 65608 MATRA MHS 128 K x 8 Ultimate CMOS SRAM Introduction The M 65608 is a very low power CMOS static RAM organized as 131072 × 8 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS brings the solution to


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    Contextual Info: Tem ic L 65656 MATRA MHS 32 K X 8 / 3.3 Volts Ultimate CMOS SRAM Introduction The L65656 is a very low power CMOS static RAM organized as 32 768 x 8 bits. It is manufactured using the MHS high performance SCMOS technology. The L65656 provides fast access time of 70 ns for a


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    L65656 00D54flb PDF

    Contextual Info: L 65656 MATRA MHS 32 K x 8 / 3.3 Volts Ultimate CMOS SRAM Introduction The L65656 is a very low power CMOS static RAM organized as 32 768 × 8 bits. It is manufactured using the MHS high performance SCMOS technology. The L65656 provides fast access time of 70 ns for a


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    L65656 PDF

    P883

    Abstract: HM-65664AB hm65664a 65664ab HM-65664
    Contextual Info: HM 65664A 8 K  8 Very Low Power CMOS SRAM Introduction The HM 65664A is a very low power CMOS static RAM organized as 8192 x 8 bit. It is manufactured using the TEMIC high performance CMOS technology named super CMOS. current typical value = 0.1 µA with a fast access time at


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    5664A 5664A 65664F SCC9301029) P883 HM-65664AB hm65664a 65664ab HM-65664 PDF

    Contextual Info: M 65698 MATRA MHS 64 K x 4 Ultimate CMOS SRAM Introduction The M 65698 is a very low power CMOS static RAM organized as 65536 × 4 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for


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    Contextual Info: M 65697 MATRA MHS 256 K x 1 Ultimate CMOS SRAM Introduction The M 65697 is a very low power CMOS static RAM organized as 262144 × 1 bit. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for


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    sck p

    Abstract: 80251G1
    Contextual Info: T em ic TSG 80251G1 S e m i c o « it u c t o r s DC Characteristics Table 1.1. Absolute Maximum Ratings • Ambient Temperature Under Bias Commercial . industrial .


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    80251G1 16/RD# 3/A11 4/A12 5/A13 6/A14 7/A15 sck p 80251G1 PDF

    P883

    Contextual Info: M 65656 MATRA MHS 32 K x 8 Ultimate CMOS SRAM Description The M 65656 is a very low power CMOS static RAM organized as 32768 × 8 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for


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    65664

    Contextual Info: L 65664 MATRA MHS 8 K x 8 / 3.3 Volts Ultimate CMOS SRAM Introduction The L65664 is a very low power CMOS static RAM organized as 8192 × 8 bits. It is manufactured using the MHS high performance SCMOS technology. current typical value = 0.1 µA with a fast access time of


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    L65664 65664 PDF

    sparclet

    Abstract: bicc V110 temic iobus ASR22 2290C TMV-8E
    Contextual Info: 90C701 for Advanced Communication Systems Preview - November 1995 Semiconductor 90C701 MATRA MHS TEMIC / MATRA MHS FAX-IT We Want Your Comments FAX +33 1-30 60 71 57 e-mail : c701.preview@matramhs.fr TEMIC / MATRA MHS SPARClet TM Applications Engineering provides a Fax number and an e-mail


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    90C701 90C701 sparclet bicc V110 temic iobus ASR22 2290C TMV-8E PDF

    KP-161

    Contextual Info: 29C80F 2D Discrete Cosine Transform Circuit Introduction The 29C80F is a dedicated two-dimensional discrete cosine transform circuit. The two-dimensional forward transform FDCT or inverse transform (IDCT) is performed on fixed 8 x 8 pixel or coefficient blocks (64


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    29C80F 29C80F MQFPJ44 SCC9000 KP-161 PDF

    Contextual Info: Tem ic M 65698 MATRA MHS 64 K x 4 Ultimate CMOS SRAM Introduction The M 65698 is a very low power CMOS static RAM organized as 65536 x 4 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for


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    65756

    Abstract: MHS 65756 L65756
    Contextual Info: L 65756 MATRA MHS 32 K x 8 High Speed CMOS SRAM 3.3 Volt Description The L 65756 is a high speed CMOS static RAM organised as 32,768 × 8 bits. It is manufactured using MHS’s high performance CMOS technology. The L 65756 provides fast access time of 25 ns for a


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    Contextual Info: Temic Semiconductors 8 K X 8 Very Low Power CMOS SRAM HM 65664A Introduction The HM 65664A is a very low power CMOS static RAM organized as 8192 x 8 bit. It is manufactured using the TEMIC high performance CMOS technology named super CMOS. With this process, TEMIC is the first to bring the solution


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    5664A 5664A again55 SCC9301029) 65664K PDF

    65756

    Contextual Info: HM 65756 MATRA MHS 32 K x 8 High Speed CMOS SRAM Introduction The HM 65756 is a high speed CMOS static RAM organised as 32,768 × 8 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip


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    HM-65756 65756 PDF

    M65656

    Abstract: 65656 P883
    Contextual Info: M65656 32 K  8 Very Low Power CMOS SRAM Introduction The M65656 is a very low power CMOS static RAM organized as 32768 x 8 bits. It is manufactured using the TEMIC high performance CMOS technology named SCMOS. With this process, TEMIC is the first to bring the solution


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    M65656 M65656 65656F/G SCC9301030) 65656 P883 PDF

    29C80F

    Abstract: H261 P883 two-dimensional inverse discrete cosine transform
    Contextual Info: 29C80F 2D Discrete Cosine Transform Circuit Introduction The 29C80F is a dedicated two-dimensional discrete cosine transform circuit. The two-dimensional forward transform FDCT or inverse transform (IDCT) is performed on fixed 8 x 8 pixel or coefficient blocks (64


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    29C80F 29C80F MQFPJ44 SCC9000 H261 P883 two-dimensional inverse discrete cosine transform PDF