MATRA MHS 28 PINS Search Results
MATRA MHS 28 PINS Result Highlights (4)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MG80C196KB |
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80C196KB - Microcontroller, 16-bit, MCS-96, 68-pin Pin Grid Array (PGA) |
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PAL16L8B-4MJ/BV |
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PAL16L8B - 20 Pin TTL Programmable Array Logic |
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PAL16L8-7PCS |
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PAL16L8 - 20-Pin TTL Programmable Array Logic |
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54F191/Q2A |
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54F191 - Up/Down Binary Counter with Preset and Ripple Clock. Dual marked as DLA PIN 5962-90582012A. |
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MATRA MHS 28 PINS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Code DPContextual Info: Packages Flat Pack package outlines 24 pins Flat Pack 500 mils Code : D Date : 21–07–92 28 pins Flat Pack (400 mils) Code : DP MATRA MHS Date : 15–04–97 1 Packages 32 pins Flat Pack (400 mils) Code : DJ 2 Date : 04–09–96 MATRA MHS |
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CERDIP 28 PINS
Abstract: CODE 1P MATRA MHS code 1k CERDIP 48 PINS
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MATRA MHS
Abstract: 400mils MATRA MHS 28 pins
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SMD-5962-38294Contextual Info: L 65764 8 K x 8 / 3.3 Volts High Speed CMOS SRAM Description The L 65764 is a high speed CMOS static RAM organized as 8192 x 8 bits. It is manufactured using MHS high performance CMOS technology. Easy memory expansion is provided by active low chip select CS1 , an active high chip select (CS2), an active |
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SMD5962 SMD-5962-38294 | |
F 10 L 600
Abstract: DIL 330 65764 z1015
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80C51PX
Abstract: 80C51P16 MATRA MHS 80c51p32
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80C51PX 80C51/C52/C154/C154D 80C51PX 80C51, 80C52, 83C154 83C154D. 80C51P 80C51P: 80C51P16 MATRA MHS 80c51p32 | |
65664
Abstract: MATRA MHS 65664a MATRA MHS HM S92A
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5664A 5664A 65664 MATRA MHS 65664a MATRA MHS HM S92A | |
M65608Contextual Info: M 65608 MATRA MHS 128 K x 8 Ultimate CMOS SRAM Introduction The M 65608 is a very low power CMOS static RAM organized as 131072 × 8 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS brings the solution to |
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Contextual Info: Tem ic L 65656 MATRA MHS 32 K X 8 / 3.3 Volts Ultimate CMOS SRAM Introduction The L65656 is a very low power CMOS static RAM organized as 32 768 x 8 bits. It is manufactured using the MHS high performance SCMOS technology. The L65656 provides fast access time of 70 ns for a |
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L65656 00D54flb | |
Contextual Info: L 65656 MATRA MHS 32 K x 8 / 3.3 Volts Ultimate CMOS SRAM Introduction The L65656 is a very low power CMOS static RAM organized as 32 768 × 8 bits. It is manufactured using the MHS high performance SCMOS technology. The L65656 provides fast access time of 70 ns for a |
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L65656 | |
P883
Abstract: HM-65664AB hm65664a 65664ab HM-65664
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5664A 5664A 65664F SCC9301029) P883 HM-65664AB hm65664a 65664ab HM-65664 | |
Contextual Info: M 65698 MATRA MHS 64 K x 4 Ultimate CMOS SRAM Introduction The M 65698 is a very low power CMOS static RAM organized as 65536 × 4 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for |
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Contextual Info: M 65697 MATRA MHS 256 K x 1 Ultimate CMOS SRAM Introduction The M 65697 is a very low power CMOS static RAM organized as 262144 × 1 bit. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for |
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sck p
Abstract: 80251G1
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80251G1 16/RD# 3/A11 4/A12 5/A13 6/A14 7/A15 sck p 80251G1 | |
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P883Contextual Info: M 65656 MATRA MHS 32 K x 8 Ultimate CMOS SRAM Description The M 65656 is a very low power CMOS static RAM organized as 32768 × 8 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for |
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65664Contextual Info: L 65664 MATRA MHS 8 K x 8 / 3.3 Volts Ultimate CMOS SRAM Introduction The L65664 is a very low power CMOS static RAM organized as 8192 × 8 bits. It is manufactured using the MHS high performance SCMOS technology. current typical value = 0.1 µA with a fast access time of |
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L65664 65664 | |
sparclet
Abstract: bicc V110 temic iobus ASR22 2290C TMV-8E
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90C701 90C701 sparclet bicc V110 temic iobus ASR22 2290C TMV-8E | |
KP-161Contextual Info: 29C80F 2D Discrete Cosine Transform Circuit Introduction The 29C80F is a dedicated two-dimensional discrete cosine transform circuit. The two-dimensional forward transform FDCT or inverse transform (IDCT) is performed on fixed 8 x 8 pixel or coefficient blocks (64 |
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29C80F 29C80F MQFPJ44 SCC9000 KP-161 | |
Contextual Info: Tem ic M 65698 MATRA MHS 64 K x 4 Ultimate CMOS SRAM Introduction The M 65698 is a very low power CMOS static RAM organized as 65536 x 4 bits. It is manufactured using the MHS high performance CMOS technology named SCMOS. With this process, MHS is the first to bring the solution for |
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65756
Abstract: MHS 65756 L65756
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Contextual Info: Temic Semiconductors 8 K X 8 Very Low Power CMOS SRAM HM 65664A Introduction The HM 65664A is a very low power CMOS static RAM organized as 8192 x 8 bit. It is manufactured using the TEMIC high performance CMOS technology named super CMOS. With this process, TEMIC is the first to bring the solution |
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5664A 5664A again55 SCC9301029) 65664K | |
65756Contextual Info: HM 65756 MATRA MHS 32 K x 8 High Speed CMOS SRAM Introduction The HM 65756 is a high speed CMOS static RAM organised as 32,768 × 8 bits. It is manufactured using MHS’s high performance CMOS technology. Easy memory expansion is provided by an active low chip |
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HM-65756 65756 | |
M65656
Abstract: 65656 P883
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M65656 M65656 65656F/G SCC9301030) 65656 P883 | |
29C80F
Abstract: H261 P883 two-dimensional inverse discrete cosine transform
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29C80F 29C80F MQFPJ44 SCC9000 H261 P883 two-dimensional inverse discrete cosine transform |