MATSUSHITA PRINTER MOTOR Search Results

windows 7 trobleshooting

Abstract: L4W 63 L4W 74 message display on LED pic Panasonic Microcontroller for Monitor computer trobleshooting
Contextual Info: MICROCOMPUTER FlashWriter User’sManual Preliminary Pub.No.19980-004E MS-DOS is a registered trademark of Microsoft Corporation. Windows is a trademark of Microsoft Corporation. PanaXSeries is a trademark of Matsushita Electric Industrial Co., Ltd. The other corporation names, logotype and product names written in this book are trademarks or registered trademarks of their corresponding corporations.

B43405

Abstract: samsung electrolytic capacitor siemens B43405 capacitor SIEMENS b43405 B43406 b43407 B4340 siemens saw filters EASY534 FALC54
Contextual Info: SPECTRUM Dieter Rogge to head Semiconductor Sales of sales and marketing in the Semiconductor Group of Siemens AG. With effect from January 1, 1997, Dieter Rogge will succeed Karlheinz Weigl as head After studying electrical engineering in Bremen, Rogge joined Siemens in 1972 as a

MP2121

Abstract: UL2896 2SD2041 dc motor 24v printer 15 pin dot matrix printer head diode t95 paper sensor copy printer zener diode T408 l14W 24V DC motor for 24v for printer
Contextual Info: DOT MATRIX PRINTERMECHANISM /WP212FP=24=A tWP216FP=24-A SPECIFICATION AND OPERATION MANUAL ~&@l~ STARMICRONICSCO LTD NOTICE ● All rights reserved. Reproduction of any part of this manual in any form whatsoever, ● ● ● without STAR’s express permission is forbidden.

GRM31MR71H105KA88L

Abstract: D05040H-683MLD D05040H D05040 MATSUSHITA PANASONIC printer motor MATSUSHITA printer motor GRM188R71E474KA12D resistor SMD footprint resistor smd motor and printer
Contextual Info: Maxim > App Notes > Power-Supply Circuits Keywords: SEPIC, Print Head Power Supply Mar 19, 2009 APPLICATION NOTE 4361 Reference Design Ensures Dynamic Output Voltages for a Print-Head Power Supply By: Surya Prakash Abstract: This article describes some important design parameters for managing power in a printer. The reference design

2SD2220

Contextual Info: Power Transistors 2SD2220 Silicon NPN triple diffusion planar type darlington Unit: mm For low-frequency amplification 90˚ 3.8±0.2 4.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2220 Silicon NPN triple diffusion planar type darlington Unit: mm For low-frequency amplification 90˚ 3.8±0.2 4.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2220 Silicon NPN triple diffusion planar type darlington Unit: mm For low-frequency amplification 90˚ 3.8±0.2 4.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer.

2SD2598

Contextual Info: Transistors 2SD2598 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification 6.9±0.1 4.0 2.5±0.1 0.8 • Features ■ Absolute Maximum Ratings Ta = 25°C 0.65 max. 14.5±0.5 (1.0) • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD0946A, 2SD0946B Silicon NPN epitaxial planar type darlington For low-frequency amplification • Package ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer.

2SD1511G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511G Silicon NPN epitaxial planar type darlington For low-frequency output amplification • Package ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4 000

Contextual Info: Transistor 2SD893, 2SD893A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 4.0±0.2 5.1±0.2 5.0±0.2 ● ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE

Contextual Info: Transistor 2SD892, 2SD892A Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm 5.0±0.2 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE

DN8695

Abstract: HZIP023-P-0138
Contextual Info: DN8695 9-circuit Darlington Driver Array High Breakdown Voltage : 50V, Large Drive Current : 1.5A Unit : mm (12.33) 11.3±0.25 8.2±0.3 ø3.6 M Di ain sc te on na tin nc ue e/ d • Overview 1.27 1.8±0.25 3.5±0.3 • Driving of the printer motors, etc.

2SD893

Abstract: 2SD893A
Contextual Info: Transistor 2SD893, 2SD893A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 4.0±0.2 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE

ISO/IEC 7810

Abstract: iso 7811-2 MAGNETIC HEAD MAGNETIC HEAD 1 track reader iso 7811-4 panasonic ZU magnetic card 14 iso 7810 warpage iso 7810 embossing specification MAGNETIC HEAD 2 track reader iso 7811-1
Contextual Info: Specification No.:MIS-DG60B123 SPECIFICATION for MAGNETIC CARD READER BUILT IN RS232 Model # ZU-1870MA8R2 Revision 1.00 JUL 2004 Matsushita Electrical Industrial Co., Ltd. Matsushita Industrial Information Equipment Co., Ltd. MAGNETIC CARD READER SPECIFICATION

iso 7811-2

Abstract: iso 7811-4 iso 7810 embossing specification ISO/IEC 7810 iso 7811-5 iso 7810 warpage iso 7811 iso 7811-1 iso 7811-3 f2f decoder
Contextual Info: Specification No.:MIS-DG60B121 SPECIFICATION for MAGNETIC CARD READER BUILT IN RS232 Model # ZU-1870MA8R Revision 1.00 JUL 2004 Matsushita Electrical Industrial Co., Ltd. Matsushita Industrial Information Equipment Co., Ltd. MAGNETIC CARD READER SPECIFICATION

2SD0946

Abstract: 2SD0946A 2SD0946B 2SD946 2SD946A 2SD946B
Contextual Info: Power Transistors 2SD0946 2SD946 , 2SD0946A (2SD946A), 2SD0946B (2SD946B) Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency amplification 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 2SD0946

2sd1205

Contextual Info: Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification 2.5±0.1 6.9±0.1 Parameter 1.0 0.45±0.05 2SD1205 base voltage 2SD1205A Collector to 2SD1205 emitter voltage 2SD1205A Ratings VEBO Peak collector current

2sd946b

Abstract: 2SD0946 2SD0946A 2SD0946B 2SD1263 2SD946 2SD946A
Contextual Info: Power Transistors 2SD0946 2SD946 , 2SD0946A (2SD946A), 2SD0946B (2SD946B) Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency amplification 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 2SD0946

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1478, 2SD1478A Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 Parameter 1.9±0.1 0.4±0.2

Contextual Info: Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification • Features ■ Absolute Maximum Ratings Parameter 2SD1198 base voltage 2SD1198A Collector to 2SD1198 emitter voltage 2SD1198A * Ratings VEBO

2SD1478

Abstract: 2SD1478A
Contextual Info: Transistors 2SD1478, 2SD1478A Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 Parameter 1.9±0.1 0.4±0.2 0.65 2 1 (0.95) (0.95) ■ Absolute Maximum Ratings Ta = 25°C

2SD1205

Abstract: 2SD1205A
Contextual Info: Transistors 2SD1205, 2SD1205A Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification 2.5±0.1 Collector-base voltage Emitter open 2SD1205 30 V 3 60 2 (2.5) Collector-emitter voltage 2SD1205 (Base open) 2SD1205A VCEO Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD0946 (2SD946), 2SD0946A (2SD946A), 2SD0946B (2SD946B) Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency amplification 3.2±0.2 1.9±0.1