MAX 1532 Search Results

5M1270

Abstract: 5m240 5M1270Z 5M80 5M40 Altera MAX V 5M40Z 5M160Z 5M240Z 5M2210Z
Contextual Info: Section II. System Integration in MAX V Devices This section provides information about system integration in MAX V devices. This section includes the following chapters: May 2011 • Chapter 4, Hot Socketing and Power-On Reset in MAX V Devices ■ Chapter 5, Using MAX V Devices in Multi-Voltage Systems

RCH8011

Abstract: RCH8011B
Contextual Info: Power Inductor< PIN Type : RCH Series> Type: RCH8011, RCH8011B ◆ Product Description ・8.3mm Max. φ RCH8011 , 8.8mm Max. φ(RCH8011B), 10.8mm Max. Height. ・Inductance range: 10 H～1.0mH(RCH8011), 1.0μH～8.2μH(RCH8011B) ・Rated current range: 0.47～4.1A(RCH8011), 5.0A～9.5A(RCH8011B)

CX240D5

Abstract: CX380D5 CXE240D5 CXE380D5 MAX 1532
Contextual Info: EUROPE Leistungs-Hybridrelais Serie CX Vorteile: Eingangsspezifikationen Eingangsspannungsbereich Typischer Eingangsstrom* Min. Abschaltspannung Ausgangsspezifikationen Lastspannungsbereich Spitzensperrspannung Stoßstrom 1 Zyklus Max I2t Max. Laststrombereich

EPM7032AE

Abstract: EPM7064AE EPM7128A EPM7128AE EPM7256A JESD-71
Contextual Info: MAX 7000A Includes MAX 7000AE Programmable Logic Device October 2001, ver. 4.1 Data Sheet • Features. ■ ■ ■ ■ ■ ■ f High-performance 3.3-V EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1)

source code for eeprom 24LC

Abstract: atmel 93c66A S93C56 BR9080AF-W i2c software program at24c04 24C02B 25LC080 atmel 24c02a S-93C56B stmicroelectronics "serial eeprom"
Contextual Info: Section III. User Flash Memory This section provides information on the user flash memory UFM block in MAX II devices. This section includes the following chapters: • Chapter 9, Using User Flash Memory in MAX II Devices ■ Chapter 10, Replacing Serial EEPROMs with MAX II User Flash Memory

MP2144

Abstract: MP2145 MP2143A 2G222 2N1029 2SB236 transistor 2SB235 2N1315 XC141 2N3132
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT

EMP7064

Abstract: EMP7512 EMP7064B
Contextual Info: MAX 7000B Programmable Logic Device June 2003, ver. 3.3 Data Sheet Features. • ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1) – Pin-compatible with the popular 5.0-V MAX 7000S and 3.3-V

GM300

Abstract: CM602 ft06 transistor C633 FSP400 2n1763 C621 DA402 2N2458 transistor c640 npn
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

MAX V

Abstract: eQFP 64 footprint 5M40Z 5M1270Z eQFP 144 footprint 5M570Z 5m240zt144 5M80Z 5M240Z Altera MAX V
Contextual Info: MAX V Device Handbook MAX V Device Handbook 101 Innovation Drive San Jose, CA 95134 www.altera.com Subscribe 2011 Altera Corporation. All rights reserved. ALTERA, ARRIA, CYCLONE, HARDCOPY, MAX, MEGACORE, NIOS, QUARTUS and STRATIX are Reg. U.S. Pat. & Tm. Off. and/or trademarks of Altera Corporation in the U.S. and other countries. All other trademarks and service marks are the property of their respective

Contextual Info: International IQR Rectifier pd-s.uss IRGCH50KE TARGET IRGCH50KE IGBT Die in Wafer Form 1200 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) VcE(on) Collector-to-Emitter Saturation Voltage 3.8V Max.

Contextual Info: International I Q R Rectifier PD-9.1424 IRGCC50KE TARGET IRGCC50KE IGBT Die in Wafer Form ' 600 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage 3.0V Max.

EMP7064

Abstract: EMP7032 EMP7064B Altera emp7064 EMP7128 EMP7032B EPM7032B EPM7064B EPM7128B EPM7256B
Contextual Info: MAX 7000B Programmable Logic Device September 2003, ver. 3.4 Data Sheet Features. • ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1)

EMP7064

Abstract: Altera emp7064 emp7032 PLD eeprom programmer schematic EMP7128 22V10s
Contextual Info: MAX 7000B Programmable Logic Device September 2003, ver. 3.4 Data Sheet Features. • ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1)

EMP7064

Abstract: EMP7032 EMP7128 EMP7512 EMP7032B EMP7064B EPM7128bti
Contextual Info: MAX 7000B Programmable Logic Device September 2005, ver. 3.5 Data Sheet • Features. ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1)

Contextual Info: International IQ R Rectifier PD-9,1422 IRGCH40KE TARGET IRGCH40KE IGBT Die in Wafer Form 1200 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.8V Max.

EPM7032B

Abstract: EPM7064B EPM7128AE EPM7128B EPM7256B EPM7512B JESD-71
Contextual Info: MAX 7000B Programmable Logic Device October 2001, ver. 3.1 Data Sheet • Features. ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1) –

EPM7032B

Abstract: EPM7064B EPM7128AE EPM7128B EPM7256B EPM7512B JESD-71
Contextual Info: MAX 7000B Programmable Logic Device August 2001, ver. 3.0 Data Sheet • Features. ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1) –

Contextual Info: PD-9.1443 International l R Rectifier IRGCH50SE TARGET IRGCH50SE IGBT Die in Wafer Form 1200 V Size 5 Standard Speed 5" Wafer Electrical Characteristics Wafer Form D escription G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.3V Max.

MT29VZZZAD8DQKSM-053 W ES.9D8

Contextual Info: International ICR Rectifier pm.-mìi IRGCH30SE TARGET IRGCH30SE IGBT Die in Wafer Form 1200 V Size 3 Standard Speed 5” Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) V c e (on) Collector-to-Emitter Saturation Voltage 3.3V Max.

Contextual Info: International IO R Rectifier PD'2'501 H F 10A 060A C B TARGET HF10A060ACB Hexfred Die in Wafer Form 600 V Size 10 4" Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) Test Conditions Forward Voltage 1.8V Max. bvr

337 BGA footprint

Abstract: 153G8 three d flipflop chip EPM7032B EPM7064B EPM7128B EPM7256B EPM7256E EPM7512B JESD-71
Contextual Info: MAX 7000B Programmable Logic Device Family October 2000, ver. 2.1 Data Sheet • Features. Preliminary Information ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1)

EPM3256A

Abstract: EPM3032A EPM3064A EPM3128A EPM3512A
Contextual Info: MAX 3000A Programmable Logic Device Family June 2002, ver. 3.0 Features. Data Sheet • ■ ■ ■ ■ ■ ■ ■ ■ ■ High–performance, low–cost CMOS EEPROM–based programmable logic devices PLDs built on a MAX® architecture (see Table 1)

EPM3032A

Abstract: EPM3064A EPM3128A EPM3256A
Contextual Info: MAX 3000A Programmable Logic Device Family October 2001, ver. 2.1 Features. Data Sheet • ■ ■ ■ ■ ■ ■ ■ ■ ■ High–performance, low–cost CMOS EEPROM–based programmable logic devices PLDs built on a MAX® architecture (see Table 1)

GCLR

Abstract: EPM3512AFI256-10 EPM3032ATC44-10 EPM3064ATC100-10 pld instruction set epm3128atc100-10 max3000A
Contextual Info: MAX 3000A Programmable Logic Device Family June 2003, ver. 3.4 Features. Data Sheet • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High–performance, low–cost CMOS EEPROM–based programmable logic devices PLDs built on a MAX® architecture (see Table 1)