MAX220TM Search Results

STE30NA50-DK

Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
Contextual Info: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000

std2n52

Abstract: stp3n60 STE38NA50 *D2N52 FTP5021-0 TO220 STP60NE06-16 STD2NB60 STP3N60FI STD12NE06 stp7nb20
Contextual Info: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 TO-220 ISOWATT 220TM / TO-220FP Fully isolated MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS Sales Type STB80NE03L-06

ste30na50-DK

Abstract: ste30na50 ste38na50 STP15N25 STE30NA50-DA STW26N25 STY16NA90 stp20n10l BUZ10 STW75N06
Contextual Info: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 2 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000

STU6NA90

Contextual Info: STU6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU6NA90 900 V <2Ω 5.8 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE

U8NA80

Abstract: STU8NA80 8A320
Contextual Info: STU8NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST U8NA80 • ■ ■ ■ ■ ■ V DSS R DS on ID 800 V < 1.0 Ω 8.3 A TYPICAL RDS(on) = 0.85 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

U14NA50

Abstract: STU14NA50
Contextual Info: STU14NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST U14NA50 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.36 Ω 14 A TYPICAL RDS(on) = 0.31 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

STU9NA60

Abstract: sd 50 diode
Contextual Info: STU9NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU9NA60 600 V < 0.8 Ω 9A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.68 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

DD 128 D transistor

Abstract: STU8NA80 8a320
Contextual Info: STU8NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU8NA80 800 V < 1.0 Ω 8.3 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.85 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: STU6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6N60 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETETIVE AVALANCHE DATA AT 100 oC

Contextual Info: STU7NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU7NA60 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 1Ω 7.6 A TYPICAL RDS(on) = 0.92 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED DATA

Contextual Info: STU10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU10NA50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.6 Ω 10.2 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED

STU9NA60

Contextual Info: STU9NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU9NA60 • ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 0.8 Ω 9A TYPICAL RDS(on) = 0.68 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

STU7NA80

Contextual Info: STU7NA80 N - CHANNEL 800V - 1.3Ω - 6.5A - Max220 FAST POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STU7NA80 800 V < 1.5 Ω 6.5 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED DATA

STU14NA50

Contextual Info: STU14NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU14NA50 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.36 Ω 14 A TYPICAL RDS(on) = 0.31 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

d 78040

Abstract: BS138 MAX03H 78105 2001 aavid 82940 78015 78015 to220 semiconductors cross index MAX01-H
Contextual Info: Table of Contents How to Use this Catalog . 2 How to Order The Max Clip SystemTM . 3

STU10NA50

Contextual Info: STU10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU10NA50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.6 Ω 10.2 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED

Contextual Info: DIMENSIONS REF. Millimeters Min. Max. Min. Max. A 4.30 4.60 0.169 0.181 A1 2.20 2.40 0.087 0.094 A2 2.90 3.10 0.114 0.122 b 0.70 0.93 0.028 0.037 b1 1.25 1.55 0.049 0.061 b2 1.20 1.50 0.047 0.059 c 0.45 0.60 0.018 0.024 D 15.90 16.30 0.626 0.642 D1 9.00 9.35

STU10NA50

Abstract: V8012
Contextual Info: STU10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU10NA50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.6 Ω 10.2 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED

Contextual Info: STU6NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA60 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE

transistor K O220

Abstract: STU6NA90 900V2
Contextual Info: STU6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 2Ω 5.8 A TYPICAL RDS(on) = 1.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE