2sk1060
Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
Text: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104
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2SK104
2SK105
2SK162
2SK163
2SK193
2SK195
2SK505
X10679EJCV0SG00
1996P
2sk1060
2SK type
transistor 2sk
transistor 2sk193
2SK105 Datasheet
transistor 2sk162
transistor SST 250
2SK1794
2SK104
2SK2234
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Untitled
Abstract: No abstract text available
Text: TK80F08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK80F08K3 Swiching Regulator Low leakage current: IDSS = 10 A (max) (VDS = 75 V) • Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C)
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TK80F08K3
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fp31ff
Abstract: transistor 131 349 2110 FP31QF FP31QF-F FP31QF-PCB1900 FP31QF-PCB2140 FP31QF-PCB900 JESD22-A114 QFN-6x6 rohm
Text: FP31QF The Communications Edge TM Product Information 2-Watt HFET Applications • • • • • • Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain
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FP31QF
FP31QF
1-800-WJ1-4401
fp31ff
transistor 131
349 2110
FP31QF-F
FP31QF-PCB1900
FP31QF-PCB2140
FP31QF-PCB900
JESD22-A114
QFN-6x6 rohm
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ultra low igss pA mosfet
Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
Text: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)
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LS4117,
2N4117)
2N4117A
300mW
2N4117/A
2N4118
FN4117/A
2N4118A
ultra low igss pA mosfet
n-channel JFET sot23-6
Ultra High Input Impedance N-Channel JFET Amplifier
N channel jfet
3N191 SPICE
P-Channel Depletion Mode FET
2n4117 jfet
jfet transistor 2n4391
U422
ultra low igss pA mosfet n channel
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2SK2701A
Abstract: FKv550n 2sk3003 2SK3801 2SK3199 fkv575
Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)
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2SK2420
2SK2701A
2SK2803
2SK2848
2SK2943
2SK3003
2SK3004
2SK3199
2SK3710
2SK3711
FKv550n
2SK3801
fkv575
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FKV550N
Abstract: No abstract text available
Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V) (µA)
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2SK1188
2SK2420
2SK2701A
2SK2778
2SK2779
2SK2803
2SK2848
2SK2943
2SK3003
2SK3004
FKV550N
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fkp*253
Abstract: fkv550n FKV550T FKP280 2SK2710a fkv550
Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V 2SK1179 500 VGSS (V) ID (A) ±20 ±8.5 ID (pulse) (A) PD (W) ±34 85 IGSS EAS (mJ) 400 (nA) max ±500 VTH IDSS Conditions VGS (V) ±20 (µA) min max Conditions VDS
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2SK1179
2SK1183
2SK1188
2SK2419
2SK2420
2SK2701
2SK2702*
2SK2704
2SK2707*
2SK2709
fkp*253
fkv550n
FKV550T
FKP280
2SK2710a
fkv550
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2sk30
Abstract: FKv550n 2SK3003 2SK3199 2SK2778
Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)
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2SK2420
2SK2701A
2SK2778
2SK2779
2SK2803
2SK2848
2SK2943
2SK3003
2SK3004
2SK3199
2sk30
FKv550n
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FKv550n
Abstract: FKV550T 2SK2848 FKP330C 2SK3004 FKP250A 2SK3710A 2SK3003 2SK2701A 2SK3711
Text: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V) (µA)
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2SK2701A
2SK2778
2SK2779
2SK2803
O-220S
95MAX
FKv550n
FKV550T
2SK2848
FKP330C
2SK3004
FKP250A
2SK3710A
2SK3003
2SK2701A
2SK3711
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TRANSISTOR 187
Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
Text: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60
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2SJ424
2SJ425
2SK1177
2SK1179
2SK1180
2SK1181
2SK1183
2SK1184
2SK1185
2SK1186
TRANSISTOR 187
fkv550
2sk2943
2SK3460
2SK2710a
2SK3724
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort JFET Transistor MMBF5484LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc IG(f) 10 mAdc 200 2.8 mW mW/°C °C 1 Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current
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MMBF5484LT1
236AB)
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc IG 10
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MMBF4416LT1
236AB)
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MMBF4416LT1
Abstract: No abstract text available
Text: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10
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MMBF4416LT1
236AB)
r14525
MMBF4416LT1/D
MMBF4416LT1
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MMBF5484LT1
Abstract: TO-236A
Text: ON Semiconductort JFET Transistor MMBF5484LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc IG(f) 10 mAdc 200 2.8 mW mW/°C °C 1 Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current
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MMBF5484LT1
236AB)
r14525
MMBF5484LT1/D
MMBF5484LT1
TO-236A
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Diode Gfg 6f
Abstract: MMBF5484LT1
Text: MOTOROLA Order this document by MMBF5484LT1/D SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current
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MMBF5484LT1/D
MMBF5484LT1
MMBF5484LT1/D*
Diode Gfg 6f
MMBF5484LT1
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MMBF4416LT1
Abstract: No abstract text available
Text: ON Semiconductort JFET VHF/UHF Amplifier Transistor MMBF4416LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage VGS 30 Vdc IG 10
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MMBF4416LT1
236AB)
MMBF44spanish
r14525
MMBF4416LT1/D
MMBF4416LT1
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MMBF5484LT1
Abstract: No abstract text available
Text: ON Semiconductort JFET Transistor MMBF5484LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Drain–Gate Voltage Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below
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MMBF5484LT1
236AB)
r14525
MMBF5484LT1/D
MMBF5484LT1
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MMBF4416LT1
Abstract: MMBF4416LT1G FR 220
Text: MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 30 Vdc Drain−Gate Voltage VDG 30 Vdc Gate−Source Voltage
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MMBF4416LT1
OT-23
O-236)
MMBF4416LT1/D
MMBF4416LT1
MMBF4416LT1G
FR 220
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Untitled
Abstract: No abstract text available
Text: MMBF5484LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below
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MMBF5484LT1
MMBF5484LT1/D
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MMBF5484
Abstract: MMBF5484LT1 MMBF5484LT1G NOR 000 001 170 007
Text: MMBF5484LT1 Preferred Device JFET Transistor N−Channel Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit VDG 25 Vdc VGS r 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below
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MMBF5484LT1
MMBF5484LT1/D
MMBF5484
MMBF5484LT1
MMBF5484LT1G
NOR 000 001 170 007
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Untitled
Abstract: No abstract text available
Text: V E R Y LOW R o n SWITCHING SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 448-1 LOW R os - IS Ohms MAXIMUM LOW Vp - 3 Volte MAXIMUM HIGH IDSS - 30 mA MINIMUM ELECTRICAL DATA A B SO L U T E M A X IM U M R A T IN G S PARAM ETER Drain to Gate Voltage
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CM697
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Untitled
Abstract: No abstract text available
Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Pd mW BVGSS (V) min (mA) Yfs mai (mmhos) min m i VGS(oir) Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 min BC264A BC264B BC264C BC264D BF246A TO-92DE
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BC264A
BC264B
BC264C
BC264D
BF246A
O-92DE
O-92DA
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2n5248
Abstract: BF245C BF247A 2N5485 2n5556 2N5668 BF244A 2N5103 BC264A BC264B
Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS oir Ciss Crss NF (V) max (PF> max (PF) max (dB) max 2 2 2 2 Pd (mW) BVGSS (V) min m ai (mmhos) min m i min (mA) BC264A BC264B BC264C BC264D BF246A TO-92DE
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BC264A
O-92DE
BC264B
BC264C
BC264D
BF246A
O-92DA
2n5248
BF245C
BF247A
2N5485
2n5556
2N5668
BF244A
2N5103
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TO-92DD
Abstract: BC264B BC264A BC264C BC264D BF246A BF246B BF246C BF247A BF247B
Text: N - Channel Junction Field Effect Transistors GENERAL PURPOSE TYPE NO. MAXIMUM RATINGS CASE IDSS Yfs VGS ofF Ciss Crss NF (V) max (piO max (PF) max (dB) max 8 8 8 8 14.5 4+ 4+ 4+ 4+ 11 + 1.2+ 1.2+ 1.2+ 1.2+ 3.5+ 2 2 2 2 Pd (mW) BVGSS (V) min max (mmhos) min
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BC264A
O-92DE
BC264B
BC264C
T092DE
BC264D
BF246A
O-92DA
TO-92DD
BF246B
BF246C
BF247A
BF247B
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