MB84 Search Results

4kw marking

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V

SA70

Abstract: 2SA31
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES

BGA-56P-M01

Abstract: DS05-50216-1E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50216-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2108XEA-70/85/MB84VD2109XEA-70/85 • FEATURES • Power Supply Voltage of 2.7 to 3.3 V

SA70

Abstract: 18FFFFH
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V

Contextual Info: TS258-C89Y Nov. 1989 FUJITSU DATA SHEET • MB84F256-25 CMOS 256K BIT LOW POWER SRAM 32,768-WORD x 8-BIT FULL CMOS STATIC RANDOM ACCESS MEMORY WITH DATA RETENTION The Fujitsu MB84F256 is a 32,768-w ord by 8 -b it static random access memory. Fabricated with full CMOS circuit, MB84F256 realizes extremely low data retention current compared with

Contextual Info: FUJITSU LTD 53E 1 • BTM^Sb 0002404 436 « F C A J T -4 e -2 -? *- A p ra m i FUJITSU Edition 1.0 DATASHEET' MB8441-45/-55 CMOS 64K-BIT DUAL PORT SRAM 8K X 8-BIT CMOS DUAL PORT STATIC RANDOM ACCESS MEMORY The Fujtau M88441 it an 8K words x 8 bits dual-port high-performance Static Random

Contextual Info: FUJITSU SEMICONDUCTOR I DATA SHEET ¡ DS05-50101-2E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM MB84VA2000-1o/M B84VA2001-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time

A17a

Abstract: A21A A18A MCP market MB84VY6A4A1 MB84VZ128A 92PIN CE-2Ra internal block diagram of mobile phone A22A
Contextual Info: New Products MB84VY6A4A1 2-Bus Type PS-MCP Mounted with 6 Memory Chips MB84VY6A4A1 The world first PS-MCP ＿ Package ＿ Stacked M CP with a 2-bus configuration, ＿ mounted with 4 memory chips for a cellular phone application block and 2 memory chips for a baseband block. MB84VY6A4A1 is configured with 328M bits

MB8421

Contextual Info: July 1990 Edition 3.0 FUJITSU DATA SHEET : MB8421/8422-90/-90U-90LU-12/-12U-12LL CMOS 16K-BIT DUAL-PORT SRAM 2K x 8 Bits CMOS Dual-Port Static Random Access Memory The Fujitsu MB8421 and MB8422 are 2,048 words x 8 bits dual-port high-performance static random access memories SRAMs fabricated in CMOS. The SRAMs use

Contextual Info: FU JITSU MOS Memories • MB8418A-12, MB8418A-12L, MB8418A-15, M B8418A-15L CMOS 16,384-Bit Static Random Access Memory Description The F ujitsu M B6418A is a 2048-word by 8-bit s ta tic random a c­ ce ss memory fabricated w ith C M O S silico n gate process. The

BGA-101P-M01

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM

SA70

Abstract: 22a17
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50207-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 8M (× 8/×16) STATIC RAM MB84VD2228XEA/EE-85 MB84VD2229XEA/EE-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V

Contextual Info: FUJITSU MOS M em ories • M B 8 4 1 6 -2 5 -W CMOS 16,384-Bit Static Random Access Memory D e s c rip tio n The Fujitsu MB8416 is a 2048-word by 8-bit sta tic random access memory fabricated w ith a CMOS silicon gate process. The memory utilizes asynchronous circuitry and may be m aintained in any state

hm6117

Abstract: TC5518
Contextual Info: F U JIT S U M IC R O E L E C T R O N IC S . MB8418-20 MB8418-20L INC. CMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION T h e Fu jits u M B 84 18 is a 2048 w ord by 8-bit s ta tic rand om a c ­ c e ss m em o ry fa b ricated w ith high density, high relia b ility C o m p le ­

MB8464A

Abstract: fujitsu 1988 MB8464A-10 tv suffix fujitsu 80 PINS
Contextual Info: January 1990 Edition 1.0 FUJITSU DATA SHEET MB8464A-10-X/-10LL-X/-15-X/-15LL-X CMOS 64K-BIT LOW POWER SRAM 8,192-WORD x 8-BIT CMOS STATIC RANDOM ACCESS MEMORY WITH DATA RETENTION The Fujitsu MB8646A-X is a 8,192-word by 8-bit static random access memory fabricated with a CMOS sillicon gate process. The memory utilizes asynchronous

mb841000

Contextual Info: JW- ^ June 1992 Edition 4.0A FUJITSU DATA SHEET • MB841000-70, -85, -10 L, LL, and SL Versions CMOS 1M Low Power SRAM with Data Retention The Fujitsu MB841000 is a 131,072 word x 8 bits static random access memory fabricated with a CMOS silicon gate process. The memory utilizes asynchronous circuitry and may be

MARKING HRA

Abstract: 4kw marking MARKING SA70
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.8E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 4M (×16) STATIC RAM MB84VD22180FA-70/MB84VD22190FA-70 MB84VD22180FM-70/MB84VD22190FM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V

Contextual Info: MCP Multi-Chip Package FLASH MEMORY & SRAM 8M (x 8/x 16) FLASH MEMORY & 1M (x 8) STATIC RAM M B84 VA2006-1o/MB84 VA2007-1o • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time • Operating Temperature -2 0 to +85°C

32 KB SRAM

Abstract: DS05-50208-1E SWITCH SA125
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM • Power supply voltage of 2.3 to 2.7 V for Flash

MB84VA2000

Abstract: F9805
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50101-2E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 8M (x 8) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VA2000-10/MB84VA2001-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time

MB84VA2106

Abstract: MB84VA2107
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50109-1E MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x16) FLASH MEMORY & 1M (× 8) STATIC RAM MB84VA2106-10/MB84VA2107-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance 100 ns maximum access time

4kw marking

Abstract: MBM29DL640E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA-90/MB84VD23280EE-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance

SA70

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE2E_W Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84LD22382EF/LD22383EF/LD22384EF-12 MB84LD22392EF/LD22393EF/LD22394EF-12 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM

32 KB SRAM

Abstract: MBM29DL640E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-90 • FEATURES • Power supply voltage of 2.7 V to 3.1 V for FCRAM • Power supply voltage of 2.7 V to 3.3 V for Flash