MBK110 Search Results

BUK9728-55A

Contextual Info: BUK9728-55A TrenchMOS logic level FET Rev. 01 — 13 Feb 2001 Product specification M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK9735-55A

Abstract: m6015
Contextual Info: BUK9735-55A N-channel TrenchMOS logic level FET Rev. 02 — 10 June 2004 M3D308 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUT12AX

Abstract: BUT12
Contextual Info: BUT12AX Silicon diffused power transistor Rev. 01 — 16 June 2004 Product data M3D308 1. Product profile 1.1 Description High voltage, high speed, NPN power transistor in a plastic package. 1.2 Features • Isolated package ■ Fast switching. 1.3 Applications

WATKINS JOHNSON mixer

Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
Contextual Info: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single

12915

Abstract: PHX18NQ11T
Contextual Info: PHX18NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 13 February 2004 M3D308 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology.

BUK9728-55A

Contextual Info: BUK9728-55A N-channel TrenchMOS logic level FET Rev. 02 — 10 June 2004 M3D308 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK7735-55A

Contextual Info: BUK7735-55A N-channel TrenchMOS standard level FET Rev. 02 — 7 June 2004 Product data M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

C2328

Abstract: BUK7728-55A
Contextual Info: BUK7728-55A N-channel TrenchMOS standard level FET Rev. 02 — 7 June 2004 M3D308 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

Contextual Info: BUK7720-55A TrenchMOS standard level FET Rev. 01 — 19 Feb 2001 Product specification M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

Contextual Info: BUK7735-55A TrenchMOS standard level FET Rev. 01 — 15 February 2001 Product specification M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

PHX8NQ11T

Abstract: 03aj01
Contextual Info: PHX8NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 14 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology. 1.2 Features

PHX3055E

Contextual Info: PHX3055E TrenchMOS standard level FET Rev. 03 — 18 March 2002 Product data M3D308 1. Description N-channel standard level field-effect power transistor in a full pack using TrenchMOS™1 technology. Product availability: PHX3055E in SOT186A Isolated TO-220 .

BUK9775-55A

Contextual Info: BUK9775-55A N-channel TrenchMOS logic level FET Rev. 02 — 10 June 2004 M3D308 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

PHX27NQ11T

Contextual Info: PHX27NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 14 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.

PHX34NQ11T

Contextual Info: PHX34NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 13 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.

BUK7720-55A

Abstract: 03nc65 03nc60
Contextual Info: BUK7720-55A N-channel TrenchMOS standard level FET Rev. 02 — 7 June 2004 M3D308 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK7775-55A

Contextual Info: BUK7775-55A TrenchMOS standard level FET Rev. 01 — 15 February 2001 Product specification M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK9735-55A

Abstract: M3D308
Contextual Info: BUK9735-55A TrenchMOS logic level FET Rev. 01 — 15 February 2001 Product specification M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

c2328

Abstract: BUK7728-55A MBK110
Contextual Info: BUK7728-55A TrenchMOS standard level FET Rev. 01 — 13 February 2001 Product specification M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

PHX45NQ11T

Contextual Info: PHX45NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 17 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.

PHX20N06T

Abstract: 12834
Contextual Info: PHX20N06T N-channel TrenchMOS standard level FET Rev. 01 — 16 February 2004 Product data M3D308 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology.

PHX23NQ11T

Abstract: TO-220F JEDEC
Contextual Info: PHX23NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 14 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.

phx7nq60e

Abstract: PHP7NQ60E
Contextual Info: PHP7NQ60E; PHX7NQ60E N-channel enhancement mode field-effect transistor Rev. 01 — 20 August 2002 Product data 1. Description N-channel, enhancement mode field-effect power transistor. Product availability: PHP7NQ60E in TO-220AB SOT78 PHX7NQ60E in isolated TO-220AB.

BUK7775-55A

Contextual Info: BUK7775-55A N-channel TrenchMOS standard level FET Rev. 02 — 7 June 2004 M3D308 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.