MBM10 Search Results

100490

Contextual Info: FU JIT S U ECL 65536-BIT BIPOLAR RANDOM ACCESS MEMORY MBM100490-15 MBM100490-25 J u ly 1 9 8 7 E d tio n 1 .0 65536-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100490 is fu lly decoded 6 5536-bit ECL read/w rite random access m em ory designed fo r main m em ory, co ntro l and b u ffe r storage applications. This device is organized as 65536 words b y one b it, and it features

Contextual Info: FUJITSU M I CRO EL EC TR ON IC S FU JITSU 23E D • 3?417fa2 OODÄHSS T BIPOCAR RANDOM* ACCESS M EM O R Y MBM10480A-10 -OS May 1988 Edition 1.0 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM10480A Is a fuSy decoded 16384-blt ECL read/w rite random access

Contextual Info: FUJITSU ECL 65536-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10490-1 5 MBM10490-25 July 1967 Edition 3.0 65536-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 10490 is fu lly decoded 055 3 6 -bit ECL read/w rite random access m em ory designed fo r main m em ory, co ntro l and b u ffe r storage a pp li­

Contextual Info: FUJITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10484AAugust 1988 Edition 2.0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM ORY The Fujitsu MBM 10484A is fu lly decoded 16384-bit ECL read/write random access memory designed fo r high-speed scratch pad, control and buffe r storage

Contextual Info: October 1989 Edition 2.0 DATA SHEET MBM10C500-15 262144-BIT BICMOS ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu M8M10C500 is fully decoded 262144 bit BICMOS ECL random access memory designed for main memory, control and buffer storage applications. This device is organized

Contextual Info: ECL 4096-BIT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY FU JITSU M BM 10476LL-9 December, 1988 Edition 2.0 4098-BIT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY The Fujitsu MBM10476LL-9 Is fully decoded 4096-bit ECL self-tim ed read/write random access memory STRAM . The device Is organized as 1024 words by 4 bits,

Contextual Info: FUJITSU MICROELECTRONICS F U J IT S U 23E D • 374m2 ECK16384-BIT»*W BIPOLAR RANDOM' G0Gfl27S 7 ■ MBM100480A-8 May 1988 Edition 1.0 " P 4 k -2 .V O S 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM100480A Is a fully decoded 16384-blt ECL read/w rite random access

Contextual Info: ECL 4096-B IT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY FU JITSU MBM100476RL-9 4096-BIT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY D e cem b er, 1988 Edition 1.0 The Fujitsu M BM 100476RL-9 is fully d eco ded 4 0 9 6 -b lt ECL s e lf-tim e d re a d /w rite random acce ss m e m o ry S T R A M . The device Is organtaed as 1024 w ords by 4 bits,

Contextual Info: F U J IT S U ECL 16384-BIT B IPO LA R R A N D O M ACCESS MEM ORY MBM10480A-8 May 1988 Edition 1.0 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM10480A Is a fully decoded 16384-blt ECL read/write random access memory designed for main m emory, control and buffer storage applications. This device

Contextual Info: 2 * M ay 1992 Edition 1.0 FUJITSU P R O D U C T PR O F IL E MBM101C524-15 1 Mb x 4 or 2 Mb x 2 BiCMOS 101K ECL SRAM T he reco n fig u ra b le 1 M b x 4 o r 2 M b x 2 B iC M O S 101K EC L S R A M is a R ead/W rite R andom A ccess M em o ry de vice w h ich can be e le ctrica lly reco nfig ured from a 1 M b x 4

24cc02

Abstract: MBM10422 MBM10422A-7 MBM10422A FPT-24CC02
Contextual Info: F U JI T S U M ICROELECTRONICS. INC. 1 *1 / — ' ECL 1024-BIT BIPOLAR ï1' RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM10422A is a fully decoded 1024-bit ECL read/write random access memory designed for high-speed scratch pad, con­ trol and buffer storage applica­

Contextual Info: October 1989 Edition 1.0 FUJITSU DATA SHEET MBM10486RL-13 16384-BIT BIPOLAR SELF-TIMED RAMDOM ACCESS MEMORY DESCRIPTION The Fujitsu M B M 1 0 4 8 6 R L -1 3 is fully decoded 1 6 3 64 -b it ECL s elf-lim ed read/write random access memory S T R A M . The device is organized as 4 09 6 words by 4 bits, and itfeatures

Contextual Info: ECL 4 0 9 6 -B IT BIPOLAR SELF-TIM ED RANDOM ACCESS MEMORY FU JITSU MBM10476RR-9 D e c e m b e r , 19B8 Edition 1 .0 4096-BIT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY T h e Fujitsu M B M 1 0 4 7 6 R R -9 Is fully d e o o d e d 4 0 9 6 -b it E C L s e lf-tim e d r e a d /w r ite

Contextual Info: Spec. No. IGBT-SP-99022 R1 Hitachi IGBT Module / Silicon N-Channel IGBT MBM100GR12 [Rated 100A/1200V, Dual-pack type] FEATURES OUTLINE DRAWING • Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode.

HX771

Abstract: HX77
Contextual Info: ECL 16384 BIT BIPOLAR SELF-TIMED RANDOM ACCESS MEMORY FUJITSU MBM10486LL-13 16384-B IT BIPOLAR S ELF-TIM E D RANDOM ACCESS MEMORY D e c e m b e r , 1988 Edition 2 .0 T h e Fujitsu M B M 1 0 4 8 6 L L -1 3 Is fully d e c o d e d 1 6 3 8 4 -b lt E C L s e lf-tim e d r e a d /w r ite

100K series ECL

Contextual Info: October 1989 Edition 2.0 FUJITSU DATA SHEET M B M 1 0 0 C 5 0 0 - 15/-17 262144-BIT BICMOS ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM100C500 is fully decoded 262144 bit BICMOS ECL random aocess memory designed for main memory, control and buffer storage applications. This device Is

Contextual Info: October 1989 Edition 2.0 FUJITSU DATA SH E E T MBM10494-7/-8 65536-BIT BIPOLAR ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu M B M 10494 is fully decoded 65536-bit EC L read/writs random access memory designed for high-speed scratch pad, oontrol and buffer storage applications. The device

101C500

Abstract: 100K series ECL
Contextual Info: October 1989 Edition 1.0 FUJITSU DATA S H E E T MBM101C500-15 262144-BIT BICMOS ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM101C500 i t uHy decocted 262144 bit BICMOS ECL random access memory designed for main memory, control and buffer storage applications. This device is

Contextual Info: October 1989 Edition 2.0 FUJITSU DATA SHEET MBM100C494-15 65536-BIT BICMOS ECL RANDOM A C C E SS MEMORY DESCRIPTION Tlie Fujitsu MBM100C494 is fully decoded 65536 bit BIC M O S EC L random access memory designedfor main memory, control and buffer storage applications. This device ¡¿organized

MBM10470

Abstract: MBM10470A
Contextual Info: FU JITSU ECL 4096-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10470A-7 August 1988 Edition 1.0 4096-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM10470A is a fully decoded 4096-blt ECL read/write random access memory designed for high-speed scratch pad. control and buffer storage applications.

MBM100480A-10

Contextual Info: FU JITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY MBM100480A-10 M ay 1988 Edition 1.0 16384-BIT BIPOLAR ECL RANDOM A C C E S S MEMORY T h e Fujitsu M B M 100480A Is a fully d e c o d e d 16384-bft E C L re a d /w rite ran d om a c c e s s m e m o ry d e sig n e d fo r m ain m e m o ry , c o n tro l and b u ffe r s to ra g e a p p lica tio n s. T h is d e vice

MBM10422A-5

Abstract: MBM10474A-10 MBM100480-15 24-Pin Ceramic DIP MBM10470 MBM100422A-5 MBM10474A-5 MBM10474A MBM100422
Contextual Info: Section 1 EC L RAM s — A t a Glance Pag« D«vto* Maximum Acoess Tim« ns Capacity Paekag« Options 1-3 MBM10422A-5 -7 5 7 1024 bits (256w x 4b) 24-pin Ceramic DIP, FPT 24- pad Ceramic LCC 1-9 MBM100422A-5 -7 5 7 1024 bits (256w x 4b) 24-pin Ceramic DIP, FPT

Contextual Info: ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY FU JITSU MBM100484-15 F e b ru a ry 1 9 8 8 E d itio n 2 .0 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100484 is fu lly decoded 16384-bit ECL read/w rite random access m emory designed fo r high-speed scratch pad, co ntro l and b uffe r storage

10A484

Contextual Info: October 1989 Edition 1.0 FUJITSU DATA SHEET MBM10A484-5 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM10A484 is fully decoded 16384-bit ECL reacVwrite random access memory designed for high-speed scratch pad, control and buffer storage applications.