MBM29F004 Search Results

Contextual Info: MBM29F004TC-70/ 90 MBM29F004BC-70/ 90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

diode MARKING CODE A9

Abstract: FPT-32P-M24 MBM29F004BC MBM29F004TC SA10
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20876-2E FLASH MEMORY CMOS 4 M 512 K x 8 BIT MBM29F004TC/004BC-70/-90 • DESCRIPTION The MBM29F004TC/BC is a 4 M-bit, 5.0 V-Only Flash memory organized as 512 K bytes of 8 bits each. The MBM29F004TC/BC is offered in a 32-pin TSOP (I) and 32-pin QFJ (PLCC) packages. This device is designed to

diode MARKING CODE A9

Abstract: MBM29F004BC MBM29F004TC SA10 FPT-32P-M24 SA1016K
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20876-3E FLASH MEMORY CMOS 4 M 512 K x 8 BIT MBM29F004TC/004BC-70/-90 • DESCRIPTION The MBM29F004TC/BC is a 4 M-bit, 5.0 V-Only Flash memory organized as 512 K bytes of 8 bits each. The MBM29F004TC/BC is offered in a 32-pin TSOP (1) and 32-pin QFJ (PLCC) packages. This device is designed

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20876-2E FLASH MEMORY CMOS 4 M 512 K x 8 BIT MBM29F004TC/004BC-70/-90 • DESCRIPTION The MBM29F004TC/BC is a 4 M-bit, 5.0 V-Only Flash memory organized as 512 K bytes of 8 bits each. The MBM29F004TC/BC is offered in a 32-pin TSOP (I) and 32-pin QFJ (PLCC) packages. This device is designed to

DS05

Abstract: FPT-32P-M24 MBM29F004BC MBM29F004TC SA10 LCC-32P-M02 70PFTN
Contextual Info: スパンションフラッシュメモリ データシート 2003 年 9 月 本ドキュメントは , 現在アドバンスト・マイクロ・デバイス社と富士通株式会社とが提供しているスパンショ ンブランドのフラッシュメモリ製品の仕様を規定しています。ドキュメントには元来の仕様開発元が記載され

diode MARKING CODE A9

Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

HD637B01VOP

Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
Contextual Info: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ

BC55

Abstract: BC-55 BA55 BC 55
Contextual Info: Flash Memory Data Sheet Table Latest Version 5V Flash AE project October 6, '00 Italic Letter : Revised Point Capacity Part Number English AE Code AE spec Rev, 2M 4M 8M Japanese AE Code Document Code Target Spec Preliminary TS05DS05- Final On Web MBM29F002TC/BC-55/70/90

MBM29F800

Abstract: MBM29F400 MBM29F800BA-90PFTR-SFK MBM29LV800 MBM29LV650 mbm29f MBM29F033 MBM29LV650UE90TR-LE1 MBM29PL160TD MBM29F040C
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA December 15, 2005 Advanced Change Notification No: Subject: 2548 Obsolescence of reverse-TSOP packages and specific speed grade of a product listed below Spansion LLC is announcing the retirement of reverse-TSOP packages in efforts to consolidate and

MSP14LV160

Abstract: MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512
Contextual Info: ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９７０８ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９Ｂ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ

electronique package

Abstract: electronique cdx3 fujitsu Flash Memory Miniature Card AMD PCMCIA linear Flash Memory Card 2M - FLASH PCMCIA linear card MB98A81183-15 1M - FLASH PCMCIA linear card PCMCIA SRAM Memory Card 512k 5v eeprom Memory 32Mbit
Contextual Info: FLASH OVERVIEW 16 18/9/98 4:12 pm Page 1 PRODUCT OVERVIEW FLASH MEMORY Fujitsu Flash Memories The Complete Package FLASH OVERVIEW 16 18/9/98 4:12 pm Page 2 Flash Memory Copyright 1998 Fujitsu Limited Tokyo, Japan, Fujitsu Mikroelektronik GmbH, Fujitsu Microelectronics Ltd and Fujitsu

AM29DL163CT

Abstract: MBM29LV160E am29lv160db90ec AM29LV160DT-90EI MBM29PL160D BGA-63 AM29PL160CB60RSI AM29DL163CB AM29PL160CB-65RSIT S29JL032
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA June 9, 2006 Advanced Change Notification No: Subject: 2607 Rev.A Obsolescence of all valid combinations of the products listed below This is revision A to ACN 2607 originally distributed on May 11, 2006. It is being revised to

toshiba toggle mode nand

Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit