MBR140 Search Results

MBR140SFT1G

Abstract: nrvb140s nrvb14 NRVB140SFT1G Diode SOd-123 marking cu l4fm
Contextual Info: MBR140SFT1G, NRVB140SFT1G, MBR140SFT3G, NRVB140SFT3G, Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high

MBR140SFT1

Abstract: MBR140SFT3 SOD-123LF
Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR130P

Abstract: MBR120P
Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P AXIAL LEAD RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-toconsr"jction with oxide passivation and metal overlap contact.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MBR140 Preliminary DIODE 1.0A SCHOTTKY BARRIER RECTIFIER DESCRIPTION  The UTC MBR140 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power

Contextual Info: MBR120L – MBR140L 1.0A LOW VF SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features      Very Low Forward Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application

MBR140P

Abstract: mbr130p MBR120P BR115P MBR115P 1N5817-19 J581 5819m
Contextual Info: 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P MOTOROLA A X I A L LEAD RECTIF IERS . . . em ploying the S c h o ttk y Barrier principle in a large area metal-tosilicon power diode. State-of-the-art geometry construction w ith oxide SCH OTTKY BARRIE R

Contextual Info: MBR140P Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)90Ô V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25¥ V(FM) Max.(V) Forward Voltage900m @I(FM) (A) (Test Condition)3.0

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR140LSF Features • • • • Low Forward Voltage Drop High-Surge-Capability Super Low Forward Voltage Drop

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR140LSF Features • • • • • Halogen free available upon request by adding suffix "-HF" High-Surge-Capability

Contextual Info: MBR140ESF, NRVB140ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR140ESF, NRVB140ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

NRVB140SF

Contextual Info: MBR140SF, NRVB140SF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR140SFT1G, NRVB140SFT1G, MBR140SFT3G, NRVB140SFT3G, Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high

marking code SOD-123fl

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR140LSF Features • • • • Low Forward Voltage Drop High-Surge-Capability Super Low Forward Voltage Drop

MBR140HW

Contextual Info: MBR120HW/ MBR140HW SENSITRON SEMICONDUCTOR SURFACE MOUNT SCHOTTKY BARRIER DIODE Data Sheet 3282, Rev. — Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability

MBR140SF

Abstract: L4f marking marking L4F
Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

mbr340m

Abstract: MBR-115 mbr320m mbr115
Contextual Info: MBR115P MBR120P MBR130P MBR140P See Page 3-63 M M O T O R O L A MBR320M MBR330M MBR340M H O T C A R R I E R P OW ER R E C T I F I E R S ^'• n D 'O v ' ,y i-.« - h o ttk s B a r r a r p r in c ip le t .a la r g p a r e a m é t - i i - r o s ■f <c o r . g o w - 'r

Contextual Info: MBR140 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)90’ V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.25¥ V(FM) Max.(V) Forward Voltage.9 @I(FM) (A) (Test Condition)3.0

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR140LSF Features • • • • • Halogen free available upon request by adding suffix "-HF" High-Surge-Capability

diode e4f

Contextual Info: MBR140ESF, NRVB140ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR140~MBR1200 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts 1.0 Amperes CURRENT DO-41 Unit: inch mm FEATURES • Plastic package has Underwriters Laboratory .034(.86) 1.0(25.4)MIN. Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound.

MBR140HW

Contextual Info: SANGDEST MICROELECTRONICS MBR120HW/MBR140HW SURFACE MOUNT SCHOTTKY BARRIER DIODE Technical Data Data Sheet N0715, Rev. A Green Products MBR120HW/MBR140HW SURFACE MOUNT SCHOTTKY BARRIER DIODE Features: • • • • • • • • • Low Turn-on Voltage

Contextual Info: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOD-123FL Package Weight mg 17 Product Group Type No. MBR0520L – MBR0540L SS0520FL – SS05100FL MBR120L – MBR140L SS1020FL – SS10200FL SS2020FL – SS20200FL ES1000FL – ES1006FL

MBR140P

Abstract: BR115P MBR130P MBR120P mbr115
Contextual Info: MOTOROLA SC -CDIODES/OPTO> 15E D 1 b3b75SS D07T573 1 T -0 3 MBR115P 1N5817 1N5818 MBR120P 1N5819 MBR130P MBR140P MOTOROLA SEM ICONDUCTOR TECHNICAL DATA A X I A L L E A D R E C T IF IE R S . . . employing the S ch o ttky Barrier principle in a large area metal-tosilicon power diode. State-of-the-art geometry features epitaxial