MBR200100C Search Results

MBR20045CT

Abstract: MBR200100CT MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20060CT MBR20080CT
Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBR20020CT A THRU MBR200100CT(A) SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

Contextual Info: MBR200100CTS Silicon Power Schottky Diode VRRM IF Features = = 100 V 200 A Package • High Surge Capability Pin 2 Pin 4 Pin 1 Pin 3 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage

Contextual Info: MBR20045CT thru MBR200100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

MBR200100CT

Abstract: MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT
Contextual Info: Transys MBR20020CT A THRU MBR200100CT(A) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 200A Features High Surge Capability 200Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

Contextual Info: MBR200100CTS Silicon Power Schottky Diode VRRM IF Features = = 100 V 200 A Package • High Surge Capability Pin 1 Pin 3 Pin 2 Pin 4 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage

Contextual Info: MBR20045CT thru MBR200100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

Contextual Info: MBR200100CTS Silicon Power Schottky Diode VRRM IF Features = = 100 V 200 A Package • High Surge Capability Pin 1 Pin 3 Pin 2 Pin 4 SOT – 227 Maximum Ratings at Tj = 125 °C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage

Contextual Info: MBR20045CT thru MBR200100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 200 A Features • High Surge Capability • Types from 45 V to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

200100CT

Abstract: MBR20080CT-200100CT MBR20020CT-20045CT 20020-20045CT 20045CT
Contextual Info: MCC MBR20020CT
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU MBR200100CT Features • • • • 200 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton

MBR20045CT

Contextual Info: Naina Semiconductor Ltd. MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified

MBR200100CT

Abstract: MBR20020CT MBR20030CT MBR20035CT MBR20040CT MBR20045CT MBR20060CT MBR20080CT
Contextual Info: MCC MBR20020CT THRU MBR200100CT Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 200 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton

203CNQ080

Abstract: 203CNQ100 CPT200100 CPT20080 CPT20090 MBR120100CT MBR12080CT MBR200100CT MBR20080CT
Contextual Info: Schottky PowerMod CPT20080-CPT200100 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT20080* 203CNQ080 MBR12080CT MBR20080CT CPT20090* CPT200100* 203CNQ100

MBR20020CT(R)

Abstract: Twin Tower 200100CT
Contextual Info: MBR 20020C T R DACO SEMICONDUCTOR CO., LTD. MBR 200100CT(R) T HRU SCHOTTKY DIODE MODULE TYPES 200A Features 200Amp Rectifier 20-100 Volts High Surge Capability Types Up to 100V VRRM Twin Tower Maximum Ratings A R Operating Temperature: -55 C to+150 Sto rage Temperatur: -55 C to +150

Contextual Info: MCC 160 A M PERE SCHO I I K Y I POWERMOD 20 30 35 40 45 60 80 100 FST16020 FST16030 FST16035 FST16040 FST16045 FST16060 FST16080 FST160100 160 160 160 160 160 160 160 160 115 115 115 115 115 115 115 115 Package Outline Pg. A-11 1200 1200 1200 1200 1200 1200

203CNQ080

Abstract: 203CNQ100 CPT200100 CPT20080 CPT20090 MBR120100CT MBR12080CT MBR20080CT
Contextual Info: ¥ ¥ Baseplate A=Common Anode Baseplate Common Cathode u *"1 1 1 H -1— 1 H u h \l i \ h - 1— 1- / °N | W ° I c Baseplate D=Doubler -I Notes: Baseplate: Nickel plated copper Microsemi Catalog Number Industry Part Number CPT20080* 203CNQ080 MBR12080CT

B2X84C12

Abstract: MBR30100 MBR400100CT RS1005M UF5407G mur640 fst83100 MBR1535 MUR140G BC548
Contextual Info: MCC P A R T IN D E X PART NUMBER 1-5KE10 C {A) 1.5KE100(C)(A) 1-5KE11(C)(A) 1.5KE110fC)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1-5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C){A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1-5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)