MBR4003 Search Results

MBR600100CT

Abstract: mcc40
Contextual Info: MCC 4 0 0 AM PERE S C H O T T K Y I FU LL PAC K _ MBR40020CT MBR40030CT MBR40035CT MBR40040CT MBR40045CT MBR40060CT MBR40080CT MBR400100CT 20 30 35 40 45 60 80 too 400 400 400 400 400 400 400 400 125 125 125 125 125 125 125 125

MBR40030CT(R)L

Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBR40030CT R L LOW VF SCHOTTKY DIODE MODULE TYPE 400A Features 400Amp Rectifier 30 Volts High Surge Capability TWIN TOWER Maximum Ratings A Operating Temperature: -40 C to+100 Sto rage Temperatur: -40 C to +150 R B Part Number

401CNQ035

Abstract: 401CNQ040 401CNQ045 CPT40035 CPT40040 CPT40045 CPT40050 MBR40035CT MBR40040CT MBR40045CT
Contextual Info: Schottky PowerMod CPT40035 - CPT40050 V Dim . In ch es Min. Baseplate A=Common Anode V Baseplate Common Cathode 1 u — 1 / T \ É ! / r '\l | - 1 c ! T T E Microsemi Catalog Number Industry P art Number CPT40035* 401CNQ035 MBR40035CT 401CNQ040 MBR40040CT

401CNQ035

Abstract: 401CNQ040 401CNQ045 CPT40030 CPT40035 CPT40040 CPT40045 CPT40050 MBR40035CT MBR40040CT
Contextual Info: Schottky PowerMod CPT40030 - CPT40050 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number CPT40030* CPT40035* CPT40040* CPT40045* Industry Part Number 401CNQ035 MBR40035CT 401CNQ040

Contextual Info: MBR40035CT R L Low VF Silicon Power Schottky Diode VRRM = 35 V IF(AV) = 400 A Features • High Surge Capability • Type 35 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Contextual Info: MBR40030CT R L Low VF Silicon Power Schottky Diode VRRM = 30 V IF(AV) = 400 A Features • High Surge Capability • Type 30 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

MBR40035CT(R)L

Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBR40035CT R L LOW VF SCHOTTKY DIODE MODULE TYPE 400A Features 400Amp Rectifier 35 Volts High Surge Capability TWIN TOWER Maximum Ratings A Operating Temperature: -40 C to+100 Sto rage Temperatur: -40 C to +150 R B Part Number

Contextual Info: MBR40020CT thru MBR40040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 400 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

401CNQ035

Abstract: 401CNQ040 401CNQ045 CPT40030 CPT40035 CPT40040 CPT40045 CPT40050 MBR40035CT MBR40040CT
Contextual Info: Schottky PowerMod CPT40030 - ¥ CPT40050 Baseplate A=Common Anode Dim. Inches Min. Max. A — 3.630 0.800 -0.630 0.120 0.130 0.490 0.510 1.375 BSC -0.010 B 0.700 c E F V U I H h 1 Baseplate Common Cathode F 1 -1 - u — -I Microsemi Catalog Number

Contextual Info: Naina Semiconductor Ltd. MBR40020CT thru MBR40040CTR Silicon Schottky Diode, 400A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

401CNQ035

Abstract: 401CNQ040 401CNQ045 CPT40030 CPT40035 CPT40040 CPT40045 CPT40050 MBR40035CT MBR40040CT
Contextual Info: Dim . Inches Min. Baseplate A=Common Anode ! H U — I - 1 - / TÉ \ ¥ Baseplate Common Cathode u, r h _ L ‘ -A Microsemi Catalog Number CPT40030* CPT40035* CPT40040* CPT40045* °N 1 | N o Baseplate D=Doubler Notes: Baseplate: Nickel plated copper

Contextual Info: MBR40020CT R THRU DACO SEMICONDUCTOR CO., LTD. MBR4001 OOCT(R) SCHOTTKY DIODE MODULE TYPES 400A 400Am p Rectifier 20-100 Volts Features High Surge Capability Types Up to 100V VRRM Twin Tower Maximum Ratings Operating Temperature: -55 C to+150 °C Storage Temperatur: -55 °C to+150 °C

400CNQ035

Abstract: 400CNQ040 400CNQ045 CPT40130 CPT40135 CPT40140 CPT40145 MBR40030CT MBRP40045CTL
Contextual Info: Schottky PowerMod CPT40130 - CPT40145 A Dim. Inches R G Min. Baseplate A=Common Anode A B C E F G H N Q R U V W B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V E Notes: Baseplate: Nickel plated copper Microsemi Catalog Number Industry Part Number

MBR400100CT

Abstract: MBR40020CT MBR40030CT MBR40035CT MBR40040CT MBR40045CT MBR40060CT MBR40080CT Daco 400Amp
Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBR40020CT R THRU MBR400100CT(R) SCHOTTKY DIODES MODULE TYPE 400A Features High Surge Capability 400Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

400CNQ035

Abstract: 400CNQ040 400CNQ045 CPT40130 CPT40135 CPT40140 CPT40145 MBR40030CT MBRP40045CTL
Contextual Info: Dim . Inches V Min. Baseplate A=Common Anode U ! H I " I - h 1 fi rr^ i / \ ¥ h1 u , — r °N | N° _ L ‘ -A Microsemi Catalog Number CPT40130* CPT40135* CPT40140* CPT40145* A -3.630 B 0.700 0.800 C -0.630 E 0.120 0.130 F 0.490 0.510 G 1.375 BSC

400Amp

Abstract: MBR400100CT MBR40020CT MBR40030CT MBR40035CT MBR40040CT MBR40045CT MBR40060CT MBR40080CT MBR400100
Contextual Info: Transys MBR40020CT R THRU MBR400100CT(R) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 400A Features High Surge Capability 400Amp Rectifier 20-100 Volts Types Up to 100V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

40060CT

Abstract: MBR300100CT
Contextual Info: MCC MBR40020CT THRU MBR300100CT
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 400 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton

Contextual Info: MBR40020CT thru MBR40040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 400 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

400CNQ035

Abstract: 400CNQ040 400CNQ045 CPT40130 CPT40135 CPT40140 CPT40145 MBR40030CT MBRP40045CTL 100S80
Contextual Info: Schottky PowerMod CPT401 30 - CPT401 45 V Dim . Min. Baseplate A=Common Anode A B C E F G H N Q R U V W ¥ U 1 H 1 “ I- h / 1 \ Baseplate Common Cathode F u , — r ! 1 oN _L‘ In ch es W° Baseplate D=Doubler Max. -3.630 0.700 0.800 -0.630

MBR40020CT

Abstract: MBR40030CT MBR40035CT MBR40040CT mbr400
Contextual Info: MBR40020CT thru MBR40040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 400 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

Contextual Info: Schottky PowerMod CPT40130 - CPT40145 A Dim. Inches R G Min. Baseplate A=Common Anode A B C E F G H N Q R U V W B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V E Notes: Baseplate: Nickel plated copper Microsemi Catalog Number Industry Part Number

B2X84C12

Abstract: MBR30100 MBR400100CT RS1005M UF5407G mur640 fst83100 MBR1535 MUR140G BC548
Contextual Info: MCC P A R T IN D E X PART NUMBER 1-5KE10 C {A) 1.5KE100(C)(A) 1-5KE11(C)(A) 1.5KE110fC)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1-5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C){A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1-5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)

Contextual Info: MBR40020CT thru MBR40040CTR Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 400 A Features • High Surge Capability • Types from 20 V to 40 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)