MBR50 Search Results

MBR5045WT

Abstract: FST5035 FST5040 FST5045 FST5050 MBR5035WT MBR5040WT
Contextual Info: 50Amp Schottky Rectifier FST5035 - FST5050 Dim. Inches Minimum Industry P art Num ber FST5035 FST5040 FST5045 FST5050 MBR5035WT MBR5040WT MBR5045WT Repetitive Peak Reverse Voltage Maximum Minimum .185 .0 8 7 .0 5 9 .0 4 0 .0 7 9 .118 .016 .819 .6 2 7 .215

Contextual Info: MOTOROLA Order this document by MBR5025L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBR5025L SWITCHMODE Power Rectifier Motorola Preferred Device The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the

MBR5025L

Contextual Info: MBR5025L Preferred Device SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Very Low Forward Voltage Drop Max 0.58 V @ 100°C

MBR500100CT

Abstract: MBR50020CT MBR50030CT MBR50035CT MBR50040CT MBR50045CT MBR50060CT MBR50080CT k 4026
Contextual Info: MCC MBR50020CT THRU MBR500100CT Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 500 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton

Contextual Info: MBR50020CT thru MBR50040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 500 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

500AMP

Abstract: MBR50020CT MBR50030CT MBR50035CT MBR50040CT MBR50045CT
Contextual Info: Transys MBR50020CT R THRU MBR50045CT(R) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 500A Features High Surge Capability 500Amp Rectifier 20-45 Volts Types Up to 45V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

Contextual Info: MBR500150CT R DACO SEMICONDUCTOR CO., LTD. THRU MBR500200CT(R) SCHOTTKY DIODE MODULE TYPES 500A Features 500Amp Rectifier 150-200 Volts High Surge Capability Types Up to 200V V RRM Twin Tower A Maximum Ratings R Operating Temperature: -55 C to+150 Storage Temperatur: -55 C to +150

Contextual Info: Schottky PowerMod CPT50235 - CPT50245 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT50235* 440CNQ030 444CNQ035 MBR50035CT 444CNQ040 MBR50040CT 444CNQ045

Contextual Info: MBR5025L Preferred Device SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Very Low Forward Voltage Drop Max 0.58 V @ 100°C

FST5060

Abstract: MBR5060WT SBL6060PT EE-170
Contextual Info: 50Amp Schottky Rectifier FST5060 Dim. Inches Minimum FST5060 Industry P art Number R epetitive Peak Reverse Voltage MBR5060WT SBL6060PT Maximum Minimum .185 .087 .059 .040 .079 .118 .016 .819 .627 .215 .790 .157 .139 .255 .170 .080 A B C D E F G H J K L M

Contextual Info: MBR50045CT thru MBR500100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 500 A Features • High Surge Capability • Types from 45 to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Contextual Info: MBR50020CT thru MBR50040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 500 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

DIODE 638 MOTOROLA

Abstract: 340E-01 340e-02 MBR5025L
Contextual Info: MOTOROLA Order this document by MBR5025L/D SEMICONDUCTOR TECHNICAL DATA MBR5025L Advance Information SWITCHMODE Power Rectifier Motorola Preferred Device The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the

Contextual Info: MBR500150CT thru MBR500200CTR Silicon Power Schottky Diode VRRM = 150 V - 200 V IF AV = 500 A Features • High Surge Capability • Types from 150 V to 200 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

440CNQ030

Abstract: 444CNQ035 444CNQ040 444CNQ045 CPT50235 CPT50240 CPT50245 MBR50035CT MBR50040CT MBR50045CT
Contextual Info: Schottky PowerMod CPT50235 - CPT50245 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT50235* 440CNQ030 444CNQ035 MBR50035CT 444CNQ040 MBR50040CT 444CNQ045

Contextual Info: MBR50045CT thru MBR500100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 500 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

Contextual Info: MBR50020CT thru MBR50040CTR Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 500 A Features • High Surge Capability • Types from 20 V to 40 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

MBR50020CT

Abstract: MBR50030CT MBR50035CT MBR50040CT MBR50045CT
Contextual Info: DACO SEMICONDUCTOR CO., LTD. MBR50020CT R THRU MBR50045CT(R) SCHOTTKY DIODES MODULE TYPE 500A Features High Surge Capability 500Amp Rectifier 20-45 Volts Types Up to 45V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

Contextual Info: DACO SEMICONDUCTOR CO.,LTD. MBR50020CT R THRU MBR500100CT(R) Fi gure .1- Typical Forward Characteristics Fi gure .2- Forward Derat ing Curve 300 1000 600 200 Amp Per leg 200 Amp Per leg Instantaneous Forward Current - Ampere 250 Average Forward Rectifier Current - Ampere

Contextual Info: DIGITRON SEMICONDUCTORS MBR5025L 40A SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol MBR5025L Unit Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Rating VRRM VRWM VR 25 V Average rectified forward current Rated VR IF(AV) 50 @ TC = 125°C

MBR5025L

Abstract: 340E-02
Contextual Info: MOTOROLA Order this document by MBR5025L/D SEMICONDUCTOR TECHNICAL DATA Advance Information SWITCHMODE Power Rectifier MBR5025L Motorola Preferred Device The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the

Contextual Info: MCC MBR50020CT
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# THRU MBR50045CT Features • • • • 500 Amp Schottky Barrier Rectifier 20 to 45 Volts Metal of siliconrectifier, majonty carrier conducton

Contextual Info: MBR5025L Preferred Device SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Very Low Forward Voltage Drop Max 0.58 V @ 100°C

Contextual Info: MBR50045CT thru MBR500100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 500 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed