MBRF25 Search Results

Contextual Info: MBR25xxCT, MBRF25xxCT & MBRB25xxCT Series Vishay Semiconductors formerly General Semiconductor Dual Schottky Barrier Rectifier Reverse Voltage 35 to 60A Forward Current 30A ITO-220AB MBRF25xxCT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80)

Contextual Info: MBRF2535CT thru MBRF25150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: MOTOROLA Order this document by MBRF2545CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE S chottky Pow er R ectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-sllicon power diode. S tate-of-the-art geometry features

Contextual Info: SENSITRON SEMICONDUCTOR MBRF2560CT
Technical Data
Data Sheet 3054, Rev. A
 MBRF2560CT SCHOTTKY RECTIFIER
Applications:



• Switching power supply • Converters • Free-Wheeling diodes • Reverse battery protection
Features:
• •

K 2545

Abstract: HML 075 IC ET C 543 marking E5 2S60 MBRF2535CT
Contextual Info: E TAIWAN SEMICONDUCTOR RoHS MBRF2535CT - MBRF25150CT Isolated 25.0 AM PS. Schottky Barrier Rectifiers 1TO-22QAB COMPLIANCE Features •> •$4- P la s tic m a te ria l u s e d c a rrie s U n d e rw rite rs L a b o r a to ry C la s s ific a tio n s S 4 V -0

Contextual Info: MCC MBRF2520CT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# THRU MBRF25100CT










Features • • • • • 25 Amp Schottky Low Power Loss High Efficiency Low Forward Voltage , High Current Capability

MBR25H35CT

Contextual Info: New Product MBR F,B 25H35CT thru MBR(F,B)25H60CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB 2 3 1 1 MBR25HxxCT PIN 1 PIN 2 PIN 3 CASE 2 3 MBRF25HxxCT

MBR25H35CT

Contextual Info: MBR25HxxCT, MBRF25HxxCT & MBRB25HxxCT Series Vishay Semiconductors New Product formerly General Semiconductor Dual High-Voltage Schottky Rectifiers Reverse Voltage 35 to 60 V Forward Current 30 A ITO-220AB MBRF25HxxCT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)

MBRF2545CT

Contextual Info: MBRF2545CT Schottky Barrier Rectifier ITO-220AB PRV : 45 Volts Io : 25 Ampere 0.134 3.4 DIA. 0.113(3.0)DIA. FEATURES : * Highly Stable Oxide Passivated Junction 0.185(4.70)Max. 0.406(10.3)MAX . 0.112(2.85) 0.100(2.55) 0.124(3.16)Max. 0.272(6.9) 0.248(6.3)

2545CT

Abstract: MBRF2535CT MBRF2550CT
Contextual Info: MBRF2535CT - MBRF25150CT CREAT BY ART 25.0 AMPS. Isolated Schottky Barrier Rectifiers ITO-220AB Pb RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

Contextual Info: MBRF2535CT AND MBRF2545CT SCHOTTKY RECTIFIER VOLTAGE RANGE - 35 and 45 Volts CURRENT - 30 Amperes FEATURES Isolated plastic package has Underwriters Laboratory Flammability Classifi­ sifi- ^ cations 94V-0. Metal to silicon rectifier, majority carrier conduction

MBRF2535CT

Contextual Info: RATINGS AND CHARACTERISTIC CURVES MBRF2535CT THRU MBRF25150CT Version: E10

b2545g

Abstract: B2545 AKA b2545 b2545 transistor manual B2545G diode b2545G AKA MBRF2545CTG Silicon Controlled Rectifier Manual transistor manual B2545 221D
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

b2545g

Abstract: B2545 AKA b2545 b2545G AKA B2545G diode B2545g SCHOTTKY BARRIER RECTIFIER aka 221D-03 MBRF2545CTG b2545 transistor manual MBRF2545CT
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

Contextual Info: MBRF2535CT thru MBRF25150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - UL Recognized File # E-326243 - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: Pr el i MBRF2535CT THRU MBRF2560CT mina ry Isolation 30.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 60 Volts Current 30.0 Amperes ITO-220AB Features a a a a a a a a .185 4.7 MAX Plastic material used carries Underwriters Laboratory Classifications 94V-0

Contextual Info: SENSITRON MBRF2545CT SEMICONDUCTOR TECHNICAL DATA DATA SHEET 3281, REV. - MBRF2545CT SCHOTTKY RECTIFIER Applications: • Switching power supply • Free-Wheeling diodes • Polarity battery protection Features: • • • • • • 150 °C TJ operation

Contextual Info: MBRF2535CT THRU MBRF25150CT 肖特基二极管 Schottky Rectifier •特征 ■外形尺寸和印记 Features ● Io 25A ● VRRM 35V-150V ● 耐正向浪涌电流能力高 High surge current capability ● 封装：模压塑料 Cases: Molded plastic Outline Dimensions and Mark

MBR25H35CT

Contextual Info: New Product MBR F,B 25H35CT thru MBR(F,B)25H60CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB 2 3 1 1 MBR25HxxCT PIN 1 PIN 2 PIN 3 CASE 2 3 MBRF25HxxCT

Contextual Info: MBRF2545CT-Y thru MBRF25150CT-Y Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

b2545

Abstract: MBRF2545CT
Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide

b2545

Contextual Info: MBRF2545CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

mbrf 100 ct

Abstract: 2S60 MBRF2535CT lc125
Contextual Info: E RoHS TAIWAN SEMICONDUCTOR MBRF2535CT - MBRF25150CT Isolated 25.0 AM PS. Schottky Barrier Rectifiers 1TO-22QAB C O M P L IA N C E Features •> •$•?- ❖ ❖ -4- P laB tic m a te ria l u e a d ca rrie s U n d e rw rite rs L a b o ra to ry C la s s ific a tio n s S 4V -0

MBR2535CT

Abstract: MBR2545CT MBR2550CT MBR2560CT
Contextual Info: MBR25xxCT, MBRF25xxCT & MBRB25xxCT Series Reverse Voltage 35 to 60 Volts Dual Schottky Barrier Rectifiers Forward Current 25.0 Amperes Features ‹ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ‹ Dual rectifier construction, positive center tap